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    P-CHANNEL SOT-23 20V Search Results

    P-CHANNEL SOT-23 20V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL SOT-23 20V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS84

    Abstract: BSS84 MARKING CODE BSS84 marking code SOT-23 marking code 84L SOT-23
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance Low Gate Threshold Voltage


    Original     		PDF BSS84 OT-23 2002/95/EC BSS84 T/R13 BSS84 MARKING CODE BSS84 marking code SOT-23 marking code 84L SOT-23

    marking code 84L SOT-23

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES Low On-Resistance 2 Low Gate Threshold Voltage


    Original     		PDF BSS84 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750 Method2026 marking code 84L SOT-23

    Untitled

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES Low On-Resistance 2 Low Gate Threshold Voltage


    Original     		PDF BSS84 OT-23 2002/95/EC IEC61249 OT-23 MIL-STD-750 Method2026 BSS84 T/R13

    marking code 84L SOT-23

    Abstract: sot-23 MARKING CODE GS 5 BSS84 marking code SOT-23
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES Low On-Resistance 2 Low Gate Threshold Voltage


    Original     		PDF BSS84 OT-23 2002/95/EC IEC61249 MIL-STD-750 Method2026 BSS84 T/R13 marking code 84L SOT-23 sot-23 MARKING CODE GS 5 BSS84 marking code SOT-23

    BSS84

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance Low Gate Threshold Voltage


    Original     		PDF BSS84 OT-23 BSS84 T/R13

    b84 diode

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS84 P-CHANNEL MOSFET SOT-23 DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.


    Original     		PDF OT-23 BSS84 OT-23 b84 diode

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS84 P-CHANNEL MOSFET SOT-23 DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.


    Original     		PDF OT-23 BSS84 OT-23

    CES2301

    Abstract: No abstract text available
    Text: CES2301 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES D -20V , -2.4A , RDS ON =95m Ω (typ) @VGS=-4.5V. RDS(ON)=130m Ω(typ) @VGS=-2.5V. High dense cell design for low RDS(ON). Rugged and reliable. 7 SOT-23 Package. G SOT-23 D S


    Original     		PDF CES2301 OT-23 OT-23 CES2301

    pfv2

    Abstract: mosfet vgs 5v SOT23
    Text: 增強型場效應管 P-Channel Enhancement-Mode MOSFET FHK2301 P-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-23 SC-59/ SOT-23-3L High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻


    Original     		PDF FHK2301 OT-23 SC-59/ OT-23-3L SC-59 OT-23/SC-59 pfv2 mosfet vgs 5v SOT23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z PA Switch z Load Switch 1. GATE 2. SOURCE 3. DRAIN MARKING: S21 Maximum ratings (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 CJ2321 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJ2305K P-Channel 12-V D-S MOSFET SOT-23-3L FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter


    Original     		PDF OT-23-3L CJ2305K OT-23-3L

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301S P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1


    Original     		PDF OT-23 CJ2301S OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1


    Original     		PDF OT-23 CJ2301 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2303 P-Channel 30-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S3


    Original     		PDF OT-23 CJ2303 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3415 P-Channel 20-V D-S MOSFET SOT-23 FEATURE Excellent RDS(ON), low gate charge,low gate voltages 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS Load switch and in PWM applicatopns


    Original     		PDF OT-23 CJ3415 OT-23

    CJ2301

    Abstract: cj230 MOSFET SOT-23 P-Channel TrenchFET Power MOSFET SOT-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1


    Original     		PDF OT-23 CJ2301 OT-23 cj230 MOSFET SOT-23 P-Channel TrenchFET Power MOSFET SOT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z PA Switch z Load Switch 1. GATE 2. SOURCE 3. DRAIN MARKING: S21 Maximum ratings (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 CJ2321 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2303 P-Channel 30-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S3


    Original     		PDF OT-23 CJ2303 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1


    Original     		PDF OT-23 CJ2301 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3415 P-Channel 20-V D-S MOSFET SOT-23 FEATURE Excellent RDS(ON), low gate charge,low gate voltages 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS Load switch and in PWM applicatopns


    Original     		PDF OT-23 CJ3415 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJ2305K P-Channel 12-V D-S MOSFET SOT-23-3L FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter


    Original     		PDF OT-23-3L CJ2305K OT-23-3L

    SSS2301A

    Abstract: sot-23 P-Channel MOSFET
    Text: SSS2301A P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) -20V -2.3A SOT-23 RDS(ON) (mΩ) Max D 130 @VGS = -4.5V G 190 @VGS = -2.5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb free.


    Original     		PDF SSS2301A OT-23 OT-23 SSS2301A sot-23 P-Channel MOSFET

    sss2309

    Abstract: No abstract text available
    Text: SSS2309 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) -20V -2.3A SOT-23 RDS(ON) (mΩ) Max D 130 @VGS = -4.5V G 190 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.


    Original     		PDF SSS2309 OT-23 OT-23 sss2309

    BS817

    Abstract: MARKING S17 TRANSISTOR SOT-23 marking JE "marking s17"
    Text: BS817 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 - H . h - A TOR VIEW T B C Mechanical Data Case: SOT-23, Plastic


    OCR Scan     		PDF BS817 OT-23, MIL-STD-202, DS11401 BS817 MARKING S17 TRANSISTOR SOT-23 marking JE "marking s17"