Untitled
Abstract: No abstract text available
Text: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I lim 10 10 10 10 A A
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VNB10N07/K10N07FM
VNP10N07FI/VNV10N07
VNB10N07
VNK10N07FM
VNP10N07FI
VNV10N07
VNB10N07,
VNK10N07FM,
VNV10N07
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VNK5N07FM
Abstract: VNP5N07FI VND5N07 VND5N07-1 SGS-Thomson mosfet ipak
Text: VND5N07/VND5N07-1 VNP5N07FI/K5N07FM "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VND5N07 VND5N07-1 VNP5N07FI VNK5N07FM Vclamp 70 70 70 70 V V V V R DS on 0.2 0.2 0.2 0.2 Ω Ω Ω Ω I lim 5 5 5 5 A A A A 3 • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION
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VND5N07/VND5N07-1
VNP5N07FI/K5N07FM
VND5N07
VND5N07-1
VNP5N07FI
VNK5N07FM
VND5N07,
VND5N07-1,
VNP5N07FI
VNK5N07FM
VND5N07
VND5N07-1
SGS-Thomson mosfet ipak
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STP4NA40FI
Abstract: STP4NA40
Text: STP4NA40 STP4NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA40 STP4NA40FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 400 V 400 V <2Ω <2Ω 4A 2.8 A TYPICAL RDS(on) = 1.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STP4NA40
STP4NA40FI
100oC
O-220
ISOWATT220
STP4NA40FI
STP4NA40
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STP6N60FI
Abstract: No abstract text available
Text: STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED
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STP6N60FI
100oC
ISOWATT220
STP6N60FI
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STP19N06L
Abstract: STP19N06LFI
Text: STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP19N06L STP19N06LFI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY
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STP19N06L
STP19N06LFI
100oC
O-220
ISOWATT220
STP19N06L
STP19N06LFI
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VNB14N04
Abstract: VNK14N04FM VNP14N04FI VNV14N04 diode SS 16
Text: VNB14N04/K14N04FM VNP14N04FI/VNV14N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB14N04 VNK14N04FM VNP14N04FI VNV14N04 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 42 42 42 42 V V V V R DS on 0.07 0.07 0.07 0.07 Ω Ω Ω Ω I lim 14 14 14 14
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VNB14N04/K14N04FM
VNP14N04FI/VNV14N04
VNB14N04
VNK14N04FM
VNP14N04FI
VNV14N04
VNB14N04,
VNK14N04FM,
VNV14N04
VNB14N04
VNK14N04FM
VNP14N04FI
diode SS 16
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STP3NA100
Abstract: STP3NA100FI
Text: STP3NA100 STP3NA100FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS on ID STP3NA100 STP3NA100FI 1000 V 1000 V <5 Ω <5Ω 3.5 A 2A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 4.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STP3NA100
STP3NA100FI
100oC
O-220
O-220FI
STP3NA100
STP3NA100FI
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BUZ80
Abstract: BUZ80FI transistor BUZ80
Text: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 800 V 800 V <4Ω <4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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BUZ80
BUZ80FI
100oC
O-220
ISOWATT220
BUZ80
BUZ80FI
transistor BUZ80
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STP7NA60
Abstract: STP7NA60FI
Text: STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7NA60 STP7NA60FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 600 V 600 V <1Ω <1Ω 7.2 A 4.4 A TYPICAL RDS(on) = 0.92 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STP7NA60
STP7NA60FI
100oC
O-220
ISOWATT220
STP7NA60
STP7NA60FI
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STP7NA40
Abstract: STP7NA40FI
Text: STP7NA40 STP7NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7NA40 STP7NA40FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 400 V 400 V <1Ω <1Ω 6.5 A 4.1 A TYPICAL RDS(on) = 0.82 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STP7NA40
STP7NA40FI
100oC
O-220
ISOWATT220
STP7NA40
STP7NA40FI
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STP4NA60
Abstract: STP4NA60FI
Text: STP4NA60 STP4NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA60 STP4NA60FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 600 V 600 V < 2.2 Ω < 2.2 Ω 4.3 A 2.7 A TYPICAL RDS(on) = 1.85 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STP4NA60
STP4NA60FI
100oC
O-220
STP4NA60
STP4NA60FI
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STP5N30
Abstract: STP5N30FI
Text: STP5N30 STP5N30FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N30 STP5N30FI • ■ ■ ■ ■ VDSS R DS on ID 300 V 300 V < 1.4 Ω < 1.4 Ω 5A 3.5 A TYPICAL RDS(on) = 1.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STP5N30
STP5N30FI
100oC
O-220
ISOWATT220
STP5N30
STP5N30FI
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VNB10N07
Abstract: VNK10N07FM VNP10N07FI VNV10N07
Text: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I lim 10 10 10 10 A A
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VNB10N07/K10N07FM
VNP10N07FI/VNV10N07
VNB10N07
VNK10N07FM
VNP10N07FI
VNV10N07
VNB10N07,
VNK10N07FM,
VNV10N07
VNB10N07
VNK10N07FM
VNP10N07FI
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STP2NA50
Abstract: STP2NA50FI P011C
Text: STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP2NA50 STP2NA50FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V <4Ω <4Ω 2.8 A 2A TYPICAL RDS(on) = 3.25 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STP2NA50
STP2NA50FI
100oC
O-220
ISOWATT220
STP2NA50
STP2NA50FI
P011C
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STP32N05L
Abstract: STP32N05LFI
Text: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STP32N05L
STP32N05LFI
100oC
175oC
O-220
STP32N05L
STP32N05LFI
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stp36n06v
Abstract: STP36N06 STP36N06FI 144AA
Text: STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 STP36N06FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STP36N06
STP36N06FI
100oC
175oC
O-220
ISOWATT220
stp36n06v
STP36N06
STP36N06FI
144AA
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BUL57PI
Abstract: BUL57 schema
Text: BUL57 BUL57PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED
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BUL57
BUL57PI
125oC
ISOWATT220
E81734
1500VRMS
BUL57
BUL57PI
schema
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IRF740
Abstract: IRF740FI transistor equivalent irf740 irf740 DATA SHEET
Text: IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.55 Ω < 0.55 Ω 10 A 5.5 A TYPICAL RDS(on) = 0.42 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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IRF740
IRF740FI
100oC
O-220
ISOWATT220
IRF740
IRF740FI
transistor equivalent irf740
irf740 DATA SHEET
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STP5N30L
Abstract: STP5N30LFI
Text: STP5N30L STP5N30LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N30L STP5N30LFI • ■ ■ ■ ■ V DSS R DS on ID 300 V 300 V < 1.4 Ω < 1.4 Ω 5A 3.5 A TYPICAL RDS(on) = 1.25 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STP5N30L
STP5N30LFI
100oC
O-220
ISOWATT220
STP5N30L
STP5N30LFI
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IRF730FI
Abstract: IRF730 OC470 irf730f
Text: IRF730 IRF730FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF730 IRF730FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 1Ω < 1Ω 5.5 A 3.5 A TYPICAL RDS(on) = 0.82 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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IRF730
IRF730FI
100oC
O-220
ISOWATT220
IRF730FI
IRF730
OC470
irf730f
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L78M00
Abstract: L78M05CV L78M06CV L78M08CV L78M09CV L78M10CV L78M12CV L78M15CV L78M18CV
Text: L78M00 SERIES POSITIVE VOLTAGE REGULATORS • ■ ■ ■ ■ OUTPUT CURRENT TO 0.5A OUTPUT VOLTAGES OF 5; 6; 8; 9; 10; 12; 15; 18; 20; 24V THERMAL OVERLOAD PROTECTION SHORT CIRCUIT PROTECTION OUTPUT TRANSISTOR SOA PROTECTION DESCRIPTION The L78M00 series of three-terminal positive
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L78M00
L78M00
O-220,
ISOWATT220,
OT-82,
OT-194
L78M05CV
L78M06CV
L78M08CV
L78M09CV
L78M10CV
L78M12CV
L78M15CV
L78M18CV
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5252 F 0921
Abstract: LF00 LF12AB LF12C LF15AB LF15C LF25AB LF25C LF27C LF60
Text: LF00AB/C SERIES VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ VERY LOW DROPOUT VOLTAGE 0.45V VERY LOW QUIESCENT CURRENT (TYP. 50 µA IN OFF MODE, 500µA IN ON MODE) OUTPUT CURRENT UP TO 500 mA LOGIC-CONTROLLED ELECTRONIC
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LF00AB/C
O-220
ISOWATT220
O-220,
ISOWATT22SGS-THOMSON
5252 F 0921
LF00
LF12AB
LF12C
LF15AB
LF15C
LF25AB
LF25C
LF27C
LF60
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VNB20N07
Abstract: VNP20N07FI VNV20N07
Text: VNP20N07FI VNB20N07/VNV20N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION
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VNP20N07FI
VNB20N07/VNV20N07
VNB20N07
VNV20N07
VNP20N07FI,
VNB20N07
VNP20N07FI
VNV20N07
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Untitled
Abstract: No abstract text available
Text: VNP20N07FI VNB20N07/VNV20N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN
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VNP20N07FI
VNB20N07/VNV20N07
VNB20N07
VNV20N07
VNP20N07FI,
VNB20N07
DocID1644
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