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    P06B03LVG Search Results

    P06B03LVG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P06B03LVG Niko Semiconductor Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF

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    sem 2005

    Abstract: P06B03LVG niko-sem nikos p06b03 5A65
    Text: Logic Level Enhancement P06B03LVG NIKO-SEM Dual P-Channel Mode Field Effect Transistor SOP-8 Lead Free PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 50mΩ -6A G :GATE D :DRAIN S :SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P06B03LVG May-04-2005 sem 2005 P06B03LVG niko-sem nikos p06b03 5A65

    Untitled

    Abstract: No abstract text available
    Text: Dual P-channel MOSFET ELM34801AA-N •General description ■Features ELM34801AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 50mΩ (Vgs=-10V) Rds(on) < 80mΩ (Vgs=-4.5V)


    Original     		PDF ELM34801AA-N ELM34801AA-N P06B03LVG May-04-2005

    ELM34801AA

    Abstract: No abstract text available
    Text: 双 P 沟道 MOSFET ELM34801AA-N •概要 ■特点 ELM34801AA-N 是 P 沟道低输入电容低工作电压、 •Vds=-30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=-6A ·Rds on < 50mΩ (Vgs=-10V) ·Rds(on) < 80mΩ (Vgs=-4.5V)


    Original     		PDF ELM34801AA-N P06B03LVG May-04-2005 ELM34801AA

    Untitled

    Abstract: No abstract text available
    Text: デュアルパワー P チャンネル MOSFET ELM34801AA-N •概要 ■特長 ELM34801AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V オン抵抗という特性を備えた大電流デュアルパワー ・ Id=-6A MOSFET です。 ・ Rds on < 50mΩ (Vgs=-10V)


    Original     		PDF ELM34801AA-N P06B03LVG May-04-2005

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    Untitled

    Abstract: No abstract text available
    Text: Dual P-channel MOSFET ELM34801AA-N •General description ■Features ELM34801AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 50mΩ (Vgs=-10V) Rds(on) < 80mΩ (Vgs=-4.5V)


    Original     		PDF ELM34801AA-N ELM34801AA-N P06B03LVG May-04-2005