Tyco amp connectors
Abstract: 1005 Ic Data EE-SX461-P11 EE-1005 tyco pull force chart
Text: Photomicrosensor EE-SX461-P11 Transmissive Dimensions Features All units are in millimeters unless otherwise indicated. Note: • • • • 171826-3 (Tyco Electronics AMP) Snap-in-mounting model. Mounts to 0.8- to 1.6-mm-thick panels. With a 15-mm-wide slot.
|
Original
|
EE-SX461-P11
15-mm-wide
Tyco amp connectors
1005 Ic Data
EE-SX461-P11
EE-1005
tyco pull force chart
|
PDF
|
tyco pull force chart
Abstract: No abstract text available
Text: Photomicrosensor EE-SX461-P11 Transmissive Dimensions Note: Features All units are in millimeters unless otherwise indicated. 171826-3 (Tyco Electronics AMP) 2 (Aperture width) • • • • Snap-in-mounting model. • Connects to Tyco Electronics AMP’s EI-series connectors.
|
Original
|
EE-SX461-P11
15-mm-wide
tyco pull force chart
|
PDF
|
6MBP75RS120
Abstract: CLK70AA160 PVC7516 6mbp50rs120 Thermistor 15SP 6mbp150rs060 d6650 CLK100AA160 ps12047 PD10016A
Text: GEI-100364C Supersedes GEI-100364B GE Fuji Drives USA AF-300 P11 User’s Guide 1999, 2000 by GE Fuji Drives USA, Inc. All rights reserved. These instructions do not purport to cover all details or variations in equipment, nor to provide every possible
|
Original
|
GEI-100364C
GEI-100364B
AF-300
0-F11
RF3180-F11
RF3100-F11,
RF3180-F11)
RF3280-F11,
RF3400-F11)
RF3880-F11)
6MBP75RS120
CLK70AA160
PVC7516
6mbp50rs120
Thermistor 15SP
6mbp150rs060
d6650
CLK100AA160
ps12047
PD10016A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Photomicrosensor Transmissive EE-SX461-P11 • Dimensions ■ Features • • • • • • Note: All units are in millimeters unless otherwise indicated. 171826-3 (Tyco Electronics AMP) Snap-in-mounting model. Mounts to 0.8- to 1.6-mm-thick panels. With a 15-mm-wide slot.
|
Original
|
EE-SX461-P11
15-mm-wide
X305-E-1
|
PDF
|
EE-SX461-P11
Abstract: photomicrosensor EE-1005
Text: Photomicrosensor Transmissive EE-SX461-P11 • Dimensions ■ Features • • • • • • Note: All units are in millimeters unless otherwise indicated. 171826-3 (Tyco Electronics AMP) Snap-in-mounting model. Mounts to 0.8- to 1.6-mm-thick panels. With a 15-mm-wide slot.
|
Original
|
EE-SX461-P11
15-mm-wide
X305-E-1
EE-SX461-P11
photomicrosensor
EE-1005
|
PDF
|
UL1007
Abstract: tyco EE-1005 EE-SX461-P11
Text: Photomicrosensor Transmissive EE-SX461-P11 • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • • 171826-3 (Tyco Electronics AMP) Snap-in-mounting model. Mounts to 0.8- to 1.6-mm-thick panels. With a 15-mm-wide slot.
|
Original
|
EE-SX461-P11
15-mm-wide
JB301-E3-01
UL1007
tyco
EE-1005
EE-SX461-P11
|
PDF
|
EE-1005
Abstract: EE-SX461-P11
Text: Photomicrosensor Transmissive EE-SX461-P11 • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • 171826-3 (Tyco Electronics AMP) Snap-in-mounting model. Mounts to 0.8- to 1.6-mm-thick panels. With a 15-mm-wide slot.
|
Original
|
EE-SX461-P11
15-mm-wide
EE-SX461-P11
EE-1005
|
PDF
|
EE-SX461-P11
Abstract: EE-1005
Text: EE-SX461-P11 Photo IC Type Photomicrosensor Offers Sensing Distances Up to 15 mm 15-mm wide slot with photo IC output Easy mounting with snap-in mechanism Built-in resistor to protect the LED Simplified wiring using Omron or AMP connectors Ordering Information
|
Original
|
EE-SX461-P11
15-mm
EE-1005
1-800-55-OMRON
EE-SX461-P11
EE-1005
|
PDF
|
EE-SX461-P11
Abstract: Omron tyco pull force chart EE-1005
Text: Photomicrosensor Transmissive EE-SX461-P11 Be sure to read Precautions on page 25. • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • 171826-3 (Tyco Electronics AMP) Snap-in-mounting model. Mounts to 0.8- to 1.6-mm-thick panels.
|
Original
|
EE-SX461-P11
15-mm-wide
EE-SX461-P11
Omron
tyco pull force chart
EE-1005
|
PDF
|
h48 diode zener
Abstract: MR030 Zener diode H48 FW3227 BOSCH 281 005 019 A1250WV-S-03P Bosch hfm 6 C529 DIODE MR030 ver 0.6 H48 zener diode
Text: 8 7 6 5 4 3 2 1 3. Block Diagram : CLK SLG8SP512TTR P17 Reset Circuit D Thermal Sensor for DDR temp Intel Thermal Sensor P10 P10 CPU Brightness Control CORE RTC Bat VCCP P27 P56 P30 LED P31 P18 DDR2 533/667 MHz DDRII SODIMM1 B Mem_B Bus P11~P16 C Lid Switch
|
Original
|
SLG8SP512TTR
SiI1392CNU
RTS5158-GR
CC545
MR040T
GM965
MR030
h48 diode zener
Zener diode H48
FW3227
BOSCH 281 005 019
A1250WV-S-03P
Bosch hfm 6
C529 DIODE
MR030 ver 0.6
H48 zener diode
|
PDF
|
transistor p14
Abstract: P7 transistor transistor P1 P 12 BS2-IC jack p10 p15 transistor transistor p13 P4 transistor transistor p15 transistor p8
Text: 1 2 4 3 J2 VR1 Vin J1 1 C4 0.1uF 9 Vdc Transistor Power Jack + Vin 3 Vout LM2940 5.0 C1 47uF D Vdd GND D 2 1 6 2 7 3 8 4 9 5 Resistor LED + C2 1.0 uF Pwr Note: The power jack and the battery are mechanically interlocked to assure they are used mutually exclusively.
|
Original
|
LM2940
19-May-2005
transistor p14
P7 transistor
transistor P1 P 12
BS2-IC
jack p10
p15 transistor
transistor p13
P4 transistor
transistor p15
transistor p8
|
PDF
|
TRANSISTOR p50
Abstract: p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11
Text: eSHP170COB Application Notes eSHP170COB 1. eSHP170COB Diagram: Connect DC Power to this connector Typical Value: 22p DAC Output ROSC (Typical: 100KΩ) Crystal: 2MHz Use this resistor to adjust bias current, current limitation, or to correct voice distortion with transistor when the
|
Original
|
eSHP170COB
eSHP170COB
eSHP170
eSHP170
AP-eSH-0005
TRANSISTOR p50
p13 transistor
P41 transistor
transistor p13
P40 transistor
p21 transistor
transistor P32 25
p23 transistor
transistor p31
transistor p11
|
PDF
|
DTA114ECA
Abstract: DTA114EKA DTC114ECA DTC114EKA
Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). DTC114EKA DTC114ECA 2) The bias resistors consist of thinfilm resistors with complete isolation to
|
Original
|
DTC114EKA
DTC114ECA
15RENT:
-100m
DTA114ECA
DTA114EKA
DTC114ECA
DTC114EKA
|
PDF
|
DTA114ECA
Abstract: DTA114EKA DTC114ECA DTC114EKA dtc114EK
Text: Digital transistors built-in resistors • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). DTC114EKA DTC114ECA 2) The bias resistors consist of thinfilm resistors with complete isolation to
|
Original
|
DTC114EKA
DTC114ECA
-100m
DTA114ECA
DTA114EKA
DTC114ECA
DTC114EKA
dtc114EK
|
PDF
|
|
|
DTB713ZE
Abstract: DTB713ZM SC-75A vmt3 DSA0028566
Text: DTB713ZE / DTB713ZM Transistors -200mA / -30V Low VCE sat Digital transistors (with built-in resistors) DTB713ZE / DTB713ZM zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) DTB713ZE 0.7 1.6 0.55 0.3 zFeature 1) VCE (sat) is lower than conventional products.
|
Original
|
DTB713ZE
DTB713ZM
-200mA
DTB713ZE
DTB713ZM
SC-75A
vmt3
DSA0028566
|
PDF
|
DTB713ZE
Abstract: DTB713ZM SC-75A
Text: -200mA / -30V Low VCE sat Digital transistors (with built-in resistors) DTB713ZE / DTB713ZM zDimensions (Unit : mm) zApplications Inverter, Interface, Driver DTB713ZE 0.7 1.6 0.55 0.3 zFeature 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of
|
Original
|
-200mA
DTB713ZE
DTB713ZM
DTB713ZE
R0039A
DTB713ZM
SC-75A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF2132 2 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment 2 Product Description -A- The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
|
Original
|
RF2132
RF2132
800MHz
950MHz
IS-95A
|
PDF
|
800MHz CDMA Handset Circuit Diagram
Abstract: RF2132
Text: RF2132 2 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment 2 Product Description -A- The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
|
Original
|
RF2132
RF2132
800MHz
950MHz
IS-95A
800MHz CDMA Handset Circuit Diagram
|
PDF
|
PF816
Abstract: No abstract text available
Text: RF2132 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment • 4.8V JCDMA/TACS Handsets Product Description The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
|
Original
|
RF2132
RF2132
800MHz
950MHz
IS-95A
PF816
|
PDF
|
DTD713Z
Abstract: No abstract text available
Text: DTB713Z series PNP -200mA -30V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC -30V -200mA 1.0kW 10kW IC(MAX.) R1 R2 VMT3 EMT3 OUT OUT IN GND IN GND DTB713ZM (SC-105AA) lFeatures DTB713ZE SOT-416 (SC-75A) lInner circuit
|
Original
|
DTB713Z
-200mA
DTB713ZM
SC-105AA)
DTB713ZE
OT-416
SC-75A)
R1102A
DTD713Z
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M G P11N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 9 0 ° C
|
OCR Scan
|
P11N60ED/D
N60ED
|
PDF
|
HPA-R11
Abstract: HPA-D11 HPA-R13 HPA-P11 HPA-T11 HPA-E11 Yamatake hpA HPA-T13 HPA-A11 HPA-P13
Text: SR. No. Yamatake Corporation SPECIFICATIONS THROUGH SCAN POLARIZED RETROREFLECTIVE SCAN SET EMITTER RECEIVER H P A -T 13 H PA-E13 HPA-R13 H PA -P13 HPA-T11 HPA-E11 HPA-R11 HPA-P11 POLARIZED RETROREFLECTIVE SCAN DIFFUSE SCAN DIFFUSE SCAN SELF-DIAGNOSIS/ FOR TRANSPARENT OBJECTS
|
OCR Scan
|
HPA-T13
HPA-E13
HPA-R13
HPA-P13
HPA-T11
HPA-E11
HPA-R11
HPA-P11
HPA-F11
HPA-D11
HPA-R11
HPA-D11
HPA-R13
HPA-P11
HPA-T11
HPA-E11
Yamatake hpA
HPA-T13
HPA-A11
HPA-P13
|
PDF
|
LP1186
Abstract: LP1401 LP1402 Frequency tripler AM FM TUNER module 30 kv diode fm tuner LP1193
Text: Radio, audio and television m odules book 3 part 5 f.m. tuner modules Type N o Sup ply voltage V D escription Frequency tuning range MHz Pow er gain 100M H z dB Dimension« mm L P11 8 6 F.M . tuner w ith diode tuning +8 87.4 to 104.5 30 6 2 x 3 1 x 17 L P1402
|
OCR Scan
|
100MHz)
LP1186
LP1402
LP1401
LP1193
LP1194/30
LP1194/40
LP1196/40
Frequency tripler
AM FM TUNER module
30 kv diode
fm tuner
|
PDF
|
RF2119
Abstract: PSSOP16 F2119
Text: RF RF2119 Preliminary M ICRO-DEVICES POWER AMPLIFIERS H IG H E F F IC IE N C Y 2 V POW ER A M P L IF IE R ufactured on an advanced Gallium Arsenide Heterojunc tion Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in hand-held
|
OCR Scan
|
F2119
915MHz
RF2119
800MHz
960MHz
RF2119
PSSOP16
F2119
|
PDF
|
