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    NE3210S01

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.


    Original     		NE3210S01 NE3210S01 NE3210S01-T1 NE3210S01-T1B PDF

    nec 0882 p

    Abstract: nec 0882 p 2
    Text: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELD EFFECT TRANSISTOR N E 3 2 1 0 S 0 1 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.


    OCR Scan     		NE3210S01 NE3210S01-T1 P14067EJ1V0D NE3210S01 nec 0882 p nec 0882 p 2 PDF