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Catalog Datasheet	MFG & Type	PDF	Document Tags
P2504edg Abstract: No abstract text available Text: Single P-channel MOSFET ELM32407LA-S •General description ■Features ELM32407LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-18A Rds(on) < 25.8mΩ (Vgs=-10V) Rds(on) < 40.0mΩ (Vgs=-7V)	Original	PDF	ELM32407LA-S ELM32407LA-S P2504EDG O-252 MAR-29-2006 P2504edg
Untitled Abstract: No abstract text available Text: 单 P 沟道 MOSFET ELM32407LA-S •概要 ■特点 ELM32407LA-S 是 P 沟道低输入电容，低工作电压，低导通电阻的大电流 MOSFET。 •Vds=-40V ·Id=-18A ·Rds on < 25.8mΩ (Vgs=-10V) ·Rds(on) < 40mΩ (Vgs=-7V) ■绝对最大额定值	Original	PDF	ELM32407LA-S 04EDG O-252 MAR-29-2006 P2504EDG
P2504E Abstract: P2504EDG Text: シングル P チャンネル MOSFET ELM32407LA-S •概要 ■特長 ELM32407LA-S は低入力容量低電圧駆動、低・ Vds=-40V ON 抵抗という特性を備えた大電流 MOS FET です。・ Id=-18A ・ Rds on < 25.8mΩ (Vgs=-10V) ・ Rds(on) < 40.0mΩ (Vgs=-7V)	Original	PDF	ELM32407LA-S P2504EDG O-252 MAR-29-2006 P2504E P2504EDG
P70N02LDG Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG	Original	PDF	O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Untitled Abstract: No abstract text available Text: Single P-channel MOSFET ELM32407LA-S •General description ■Features ELM32407LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-18A Rds(on) < 25.8mΩ (Vgs=-10V) Rds(on) < 40.0mΩ (Vgs=-7V)	Original	PDF	ELM32407LA-S ELM32407LA-S P2504EDG O-252 MAR-29-2006