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    P2F 17 Search Results

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    P2F 17 Price and Stock

    Bivar Inc SMFLP2F-1.75

    LIGHT PIPE FLEX ADAPT SMD 1.75"
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    DigiKey SMFLP2F-1.75 Bag 100
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    • 100 $0.8833
    • 1000 $0.8833
    • 10000 $0.8833
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    Newark SMFLP2F-1.75 Bulk 100
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    • 100 $1.03
    • 1000 $0.794
    • 10000 $0.622
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    TME SMFLP2F-1.75 100
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    • 100 $1.07
    • 1000 $0.85
    • 10000 $0.75
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    AMD XCKU3P-2FFVB676E

    FPGA - Field Programmable Gate Array XCKU3P-2FFVB676E
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    Mouser Electronics XCKU3P-2FFVB676E 3
    • 1 $2090.33
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    AMD XCKU3P-2FFVB676I

    FPGA - Field Programmable Gate Array XCKU3P-2FFVB676I
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    Mouser Electronics XCKU3P-2FFVB676I 3
    • 1 $2387.85
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    AMD XCKU5P-2FFVB676E

    FPGA - Field Programmable Gate Array XCKU5P-2FFVB676E
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    Mouser Electronics XCKU5P-2FFVB676E 3
    • 1 $2924.6
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    AMD XCKU11P-2FFVE1517I

    FPGA - Field Programmable Gate Array XCKU11P-2FFVE1517I
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    Mouser Electronics XCKU11P-2FFVE1517I 2
    • 1 $6241.54
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    Find more P2F 17 price and stock on Findchips.com

    P2F 17 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    microwave antenna

    Abstract: P2F-52 p2f 43 parabolic microwave antenna Andrew antennas microwave antenna andrew EIA-195-C
    Text: Terrestrial Microwave Antenna Products P2F-52 Antenna 0.6m 2ft Parabolic Antenna A ndrew 52 series antennas are designed to meet the requirements of the 5 GHz unlicensed bands. This antenna uses proprietary technology to deliver superior electrical performance.


    Original     		PDF P2F-52 microwave antenna p2f 43 parabolic microwave antenna Andrew antennas microwave antenna andrew EIA-195-C

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS


    Original     		PDF FPD2000AS FPD2000AS 350mA

    PHEMT marking code a

    Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
    Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		PDF FPD4000AF FPD4000AF PHEMT marking code a FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A

    transistor P2F

    Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz


    Original     		PDF FPD2000AS FPD2000AS 350mA transistor P2F p2f 250 PHEMT marking code a p2F 45 MIL-HDBK-263 40 P1dB 2W transistor marking code 1325

    transistor SMD P2F

    Abstract: atc600s smd p2f transistor smd marking code j6 PHEMT marking code a atc600 smd p2f FPD4000AF MIL-HDBK-263 Filtronic Components
    Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		PDF FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F atc600s smd p2f transistor smd marking code j6 PHEMT marking code a atc600 smd p2f MIL-HDBK-263 Filtronic Components

    transistor SMD P2F

    Abstract: smd p2f transistor smd p2f transistor P2F P2F SMD TRANSISTOR MARKING P2F smd transistor marking 26 smd transistor p2f transistor marking p2f ON MARKING P2F
    Text: Transistors SMD Type PNP Switching Transistor PXT2907A Features High current max. 600 mA Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage


    Original     		PDF PXT2907A transistor SMD P2F smd p2f transistor smd p2f transistor P2F P2F SMD TRANSISTOR MARKING P2F smd transistor marking 26 smd transistor p2f transistor marking p2f ON MARKING P2F

    transistor SMD P2F

    Abstract: smd p2f transistor atc600s FPD4000AF PHEMT marking code a smd marking code j6 smd p2f pHEMT FET marking A transistor STD P2F smd code marking C8
    Text: FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		PDF FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F smd p2f transistor atc600s PHEMT marking code a smd marking code j6 smd p2f pHEMT FET marking A transistor STD P2F smd code marking C8

    transistor SMD P2F

    Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
    Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		PDF FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: Product specification PXT2907A Features High current max. 600 mA Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -5 V


    Original     		PDF PXT2907A

    Untitled

    Abstract: No abstract text available
    Text: Low Cost Temperature Meters with 6-Channel Selector Switch Model DP45-JF 348 $ Shown with SB45 ߜ Thermocouples J, K, R or S with 1° Resolution ߜ RTD with 0.1° or 1° Resolution ߜ CSA and UL Approved ߜ Available with 6-Channel Switch Box ߜ Low Cost


    Original     		PDF DP45-JF GKMQSS-062G-6, GKQSS-14G-12, SPC18 DP45KC1, SPC18,

    P3F filtronic

    Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B
    Text: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency


    Original     		PDF FPD10000AF FPD10000AF FPD10000AF) P3F filtronic pHEMT FET marking A MIL-HDBK-263 PHEMT marking code a PHEMT marking code B

    transistor marking code 1325

    Abstract: vp 3082 EV-SP-000044-001 MARKING W1 AD PHEMT marking code a FPD2000AS ipc 9701 filtronic Solid State
    Text: FPD2000AS Datasheet v2.4 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz


    Original     		PDF FPD2000AS FPD2000AS J-STD-020C, transistor marking code 1325 vp 3082 EV-SP-000044-001 MARKING W1 AD PHEMT marking code a ipc 9701 filtronic Solid State

    transistor marking code 1325

    Abstract: FPD2000AS filtronic Solid State
    Text: FPD2000AS Datasheet v3.0 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz


    Original     		PDF FPD2000AS FPD2000AS J-STD-020C, transistor marking code 1325 filtronic Solid State

    p2f 17

    Abstract: No abstract text available
    Text: NEW P 2F-17 1.71 - 1 .9 9 GHz & P2F-23B (2 .2 9 - 2.5 GHz) A nten n as W ide-Beam , Lo w W indload A n te n n a s for P C S , S p re a d S p e c tru m A p p lic a tio n s N o w PCS and Spread Spectrum system designers and operators can take advantage of high gain perform ance and reliable,


    OCR Scan     		PDF 2F-17 P2F-23B P2F-17 P2F-23B 153rd G0462 l-flOO-255-1470 p2f 17

    Untitled

    Abstract: No abstract text available
    Text: KM684000A Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft October 26th 1993 Advance 0.1 Revise December 9th 1994 Prelim inary 0.2 Revise - Changed Operating current Icc2; 80m A -> 90mA


    OCR Scan     		PDF KM684000A 512Kx8 100ns

    PM7530

    Abstract: ISE Electronics Itron fg410E2 "Vacuum Fluorescent Display" Vacuum Fluorescent Display 38 PIN vacuum fluorescent display FG410E2 FG410E2-1B00 Itron Electronics 30 PIN vacuum fluorescent display
    Text: 103 93t, 2 _ ifron Vacuum Fluorescent Display Rev. Version 00 Specification of Vacuum Fluorescent Display Type Name: FG410E2 Spec. No.: FG410E2-1B00 Revi sion Ltr Date 08/09/78 07/19/84 Description Initial Changed Changed Changed Changed Chk Apprvd


    OCR Scan     		PDF FG410E2 FG410E2-1B00 PM3011 PM7530 FG410E2 D-T-742-1 PM7530 ISE Electronics Itron fg410E2 "Vacuum Fluorescent Display" Vacuum Fluorescent Display 38 PIN vacuum fluorescent display FG410E2-1B00 Itron Electronics 30 PIN vacuum fluorescent display

    Untitled

    Abstract: No abstract text available
    Text: JfcKRL Wirewound Power Resistors M IL-R - M IL-R -2 6 KRL 39007 STYLE WATTAGE W OR KING M AXIM UM RA TING VOLTAGE RESISTANCE U V U V P & C SERIES D IM E N S IO N S LENG TH IN O HM S +.062 +.010 LEAD AW G DIAM ETER +.032 (+.010) C-1/4 .5 1.0 18 20 3.4K fi


    OCR Scan     		PDF 10KiJ 100il;

    Untitled

    Abstract: No abstract text available
    Text: A COMPANY OF MODEL CP- X F W irewound Fuse Resistors C o m m e rc ia l, P o w er, A x ia l Lead FEATURES • • • • Fireproof inorganic construction Multiple physical configurations available Terminal strength - 7 pound pull test Special inorganic potting compound provides high thermal


    OCR Scan     		PDF P-15F CP-20F

    Untitled

    Abstract: No abstract text available
    Text: 1CT i 1CT lOOOpF 2 K V SHIELD ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P2-P3 (P2-F (P4-P5) (P4P7-P8) (P9-P10) 2.0 TURNS RATIO: (P2-P3) : (P4-P5) : (P7-P8) : (P9-P10) 350uH 350uH 350uH 350uH (J1 - J2 ) (J3 - J6 ) (J4 - J5 ) : (J7 - J8 ) : : : : 1CT 1CT


    OCR Scan     		PDF P9-P10) 350uH 10OKHz,

    Untitled

    Abstract: No abstract text available
    Text: 1CT i 1CT lOOOpF 2K V /h r SHIELD ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P (P2-F 2 -P 3 (P (P44 -P 5 ) (P7— P8) (P 9 -P 1 0 ) 2.0 TURNS RATIO: (P 2 -P 3 ) : (J 1 -J2 ) (P 4 -P 5 ) : (J 3 -J6 ) (P 7 -P 8 ) : (J 4 -J5 ) (P 9 -P 1 0 ) : (J 7 -J8 ) 350uH


    OCR Scan     		PDF 350uH 10OKHz, SI-51005

    Untitled

    Abstract: No abstract text available
    Text: 1 & KRL KRL STYLE C-l/4 P-l/2 C-l/2 (P-1A) C-1A C-1B (P-1C) C-1C C-1D (P-2) C-2 (P-2A) C-2A C-2B (P-2C) C-2C (P-2D) C-2D (P-2E) C-2E (P-2F) C-2F (P-3) C-3 C-4 (P-5) C-5 (P-6) C-6 C-7 C-7A C-10A P & C SERIES Wlrewound Power Resistors MIL-R-26 MIL-R39007 RW-70


    OCR Scan     		PDF C-10A MIL-R-26 MIL-R39007 RW-70 RW-79 RWR-71 RW-69 RW-74 RW-67 RWR-74

    101J

    Abstract: P9-P10
    Text: 1CT i 1CT lOOOpF 2KV /hr SHIELD ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P (P2-F 2 -P 3 (P (P44 -P 5 ) (P7— P8) (P 9 -P 1 0 ) 2.0 TURNS RATIO: (P 2 -P 3 ) : (J 1 -J2 ) (P 4 -P 5 ) : (J 3 -J6 ) (P 7 -P 8 ) : (J 4 -J5 ) (P 9 -P 1 0 ) : (J 7 -J8 ) 350uH


    OCR Scan     		PDF 350uH 10OKHz, P9-P10) 101J P9-P10

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP switching transistor PXT2907A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base Switching and linear amplification. DESCRIPTION


    OCR Scan     		PDF PXT2907A PXT2222A.

    BJE 80

    Abstract: No abstract text available
    Text: 1CT i 1CT lOOOpF 2KV SHIELD ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P2-P3 (P2-F (P4-P5) (P4(P7—P8) (P9-P10) 2.0 TURNS RATIO: (P2-P3) : (J1-J2) (P4-P5) : (J3-J6) P7-P8) : (J4-J5) (P9-P10) : (J7-J8) : : : : 350uH 350uH 350uH 350uH MIN. MIN. MIN. MIN.


    OCR Scan     		PDF P9-P10) 350uH 10OKHz, BJE 80