P5506HVG Search Results

P5506HVG Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
P5506HVG		Niko Semiconductor	Dual N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
P5506HVG		Niko Semiconductor	Dual N-Channel Enhancement FET		Original	PDF

P5506HVG Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
P5506HVG Abstract: P5506 EQUIVALENT* P5506 10 35 SOP DIODE BR 8 TRANSISTOR Text: P5506HVG Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 60 55mΩ 4.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	PDF	P5506HVG AUG-19-2004 P5506HVG P5506 EQUIVALENT* P5506 10 35 SOP DIODE BR 8 TRANSISTOR
Untitled Abstract: No abstract text available Text: Dual N-channel MOSFET ELM34804AA-N •General description ■Features ELM34804AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=4.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)	Original	PDF	ELM34804AA-N ELM34804AA-N P5506HVG AUG-19-2004
ELM34804AA Abstract: No abstract text available Text: 双 N 沟道 MOSFET ELM34804AA-N •概要 ■特点 ELM34804AA-N 是 N 沟道低输入电容低工作电压、 •Vds=60V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=4.5A ·Rds on < 55mΩ (Vgs=10V) ·Rds(on) < 75mΩ (Vgs=4.5V) ■绝对最大额定值	Original	PDF	ELM34804AA-N P5506HVG AUG-19-2004 ELM34804AA
P70N02LDG Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG	Original	PDF	O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
p5506hvg Abstract: No abstract text available Text: Dual N-channel MOSFET ELM34804AA-N •General description ■Features ELM34804AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=4.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)	Original	PDF	ELM34804AA-N ELM34804AA-N P5506HVG AUG-19-2004 p5506hvg
Untitled Abstract: No abstract text available Text: デュアルパワー N チャンネル MOSFET ELM34804AA-N •概要 ■特長 ELM34804AA-N は低入力容量低電圧駆動、低オン抵抗という特性を備えた大電流デュアルパワー・ Vds=60V ・ Id=4.5A MOSFET です。・ Rds on < 55mΩ (Vgs=10V)	Original	PDF	ELM34804AA-N P5506HVG AUG-19-2004