marking code ya SMD Transistor
Abstract: nxp sot363 MARKING 16
Text: TS SO P6 PMG85XP 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench
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PMG85XP
OT363
SC-88)
marking code ya SMD Transistor
nxp sot363 MARKING 16
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PHOTOTRANSISTOR 3 PIN
Abstract: 817 photo coupler DIODE m1 LED phototransistor IC PACKAGE led phototransistor 3 pin ir receiver smd diode 2 pin 3 pin phototransistor phototransistor blue light lens photodiode phototransistor phototransistor, 850nm
Text: INFRARED SERIES PART NO. SYSTEM z INFRARED EMITTING DIODE z PHOTOTRANSISTORS z PHOTODIODE LAMP CATEGORY LED PRODUCT PACKAGE TYPE LENS APPEARANCE B - xxx - SPECIAL DEVICE SERIES IDENTIFICATION CHIP LEAD TYPE LAMP CATEGORY: CHIP: IR : Infrared Emitting Diode
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940nm
880nm
850nm
PHOTOTRANSISTOR 3 PIN
817 photo coupler
DIODE m1
LED phototransistor IC PACKAGE
led phototransistor 3 pin
ir receiver smd diode 2 pin
3 pin phototransistor
phototransistor blue light
lens photodiode phototransistor
phototransistor, 850nm
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Untitled
Abstract: No abstract text available
Text: CY8CKIT-030 PSoC 3 Development Kit Guide Doc. # 001-61038 Rev. *H Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone USA : 800.858.1810 Phone (Intnl): 408.943.2600 http://www.cypress.com Copyrights Copyrights Cypress Semiconductor Corporation, 2011-2013. The information contained herein is subject to change without notice.
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CY8CKIT-030
CY8CKIT-030
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50mil keyed smd connector
Abstract: No abstract text available
Text: CY8CKIT-030 PSoC 3 Development Kit Guide Doc. # 001-61038 Rev. * Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone USA : 800.858.1810 Phone (Intnl): 408.943.2600 http://www.cypress.com Copyrights Copyrights Cypress Semiconductor Corporation, 2011. The information contained herein is subject to change without notice. Cypress
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CY8CKIT-030
151-8030-E
50mil keyed smd connector
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mini projects based on opamp
Abstract: CY8C5588AXI-060 mini projects based on psoc5 kit voltage convertor 9V DC to 3,3V DC mini projects based on psoc kit CY8CKIT-050 CY7C68013A-56LTXC CY8C5588AXI CSTCE24M0XK2010R0 smd RNC SOT-223
Text: CY8CKIT-050 PSoC 5 Development Kit Guide Doc. # 001-65816 Rev. *A Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone USA : 800.858.1810 Phone (Intnl): 408.943.2600 http://www.cypress.com Copyrights Copyrights Cypress Semiconductor Corporation, 2011. The information contained herein is subject to change without notice. Cypress
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CY8CKIT-050
151-8030-E
mini projects based on opamp
CY8C5588AXI-060
mini projects based on psoc5 kit
voltage convertor 9V DC to 3,3V DC
mini projects based on psoc kit
CY7C68013A-56LTXC
CY8C5588AXI
CSTCE24M0XK2010R0
smd RNC SOT-223
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Untitled
Abstract: No abstract text available
Text: SMD LED LTW-X45T-PH 1. Description The LTW LiteOn White LED is a revolutionary, energy efficient and ultra compact new light source, combining the lifetime and reliability advantages of Light Emitting Diodes with the brightness of conventional lighting. It gives you total design freedom and
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LTW-X45T-PH
35/40/20mA
BNS-OD-FC002/A4
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Zener Diodes
Abstract: 55c5v1
Text: SMD Zener Diodes CZRH3-55C2V4-G Thru. CZRH3-55C39-G Voltage: 2.4 to 39 Volts Power: 150 mWatts RoHS Device Features SOT-523 -Planar die construction. -150mW power dissipation. 0.067 1.70 0.059(1.50) -Ultra small surface mount package. 3 -Lead free/RoHS compliant.
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CZRH3-55C2V4-G
CZRH3-55C39-G
OT-523
-150mW
OT-523,
MIL-STD202G
CZRG3-55C39-G)
QW-BZ017
Zener Diodes
55c5v1
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Untitled
Abstract: No abstract text available
Text: SMD Zener Diodes CZRH3-55C2V4-G Thru. CZRH3-55C39-G Voltage: 2.4 to 39 Volts Power: 150 mWatts RoHS Device Features SOT-523 -Planar die construction. -150mW power dissipation. 0.067 1.70 0.059(1.50) -Ultra small surface mount package. 3 -Lead free/RoHS compliant.
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CZRH3-55C2V4-G
CZRH3-55C39-G
OT-523
-150mW
OT-523,
MIL-STD202G
CZRG3-55C39-G)
QW-BZ017
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PDF
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marking CODE R SMD DIODE
Abstract: smd diode marking code SMD MARKING CODE transistor BB146 UHF variable capacitance diode "Variable Capacitance Diode" p6 code marking for diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB146 UHF variable capacitance diode Product specification 1996 Sep 20 Philips Semiconductors Product specification UHF variable capacitance diode BB146 FEATURES • Ultra high ratio • Excellent matching to 1.6% DMA
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M3D049
BB146
MAM130
BB146
OD323
marking CODE R SMD DIODE
smd diode marking code
SMD MARKING CODE transistor
UHF variable capacitance diode
"Variable Capacitance Diode"
p6 code marking for diode
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smd rf transistor marking
Abstract: HVC136 marking SMD P6 RF25
Text: Diodes SMD Type Silicon Epitaxial Trench Pin Diode HVC136 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Adopting the trench structure improves low capacitance. C = 0.45 pF max Low forward resistance. (rf=2.5 max) +0.1
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HVC136
OD-523
77max
07max
200pF,
smd rf transistor marking
HVC136
marking SMD P6
RF25
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BB146
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB146 UHF variable capacitance diode Product specification File under Discrete Semiconductors, SC01 1996 Sep 20 Philips Semiconductors Product specification UHF variable capacitance diode BB146 FEATURES • Ultra high ratio
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M3D049
BB146
MAM130
BB146
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Untitled
Abstract: No abstract text available
Text: D ata Sheet 200 mW EPITAXIAL PLANAR DIODES semiconductor Description Mechanical Dimensions 3 *3 £ Features • INDUSTRY STANDARD SOT-23 PACKAGE S M EETS UL SPECIFICATION S^V-O ■ PLANAR PRO CESS ■ 200 mW POWER DISSIPATION FM BBA S19.21 E le ctrica l C h a racte ristics 0 2 5 °C .
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OCR Scan
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OT-23
BBAS19
BBAS20
BBAS21
CurC10
21X21X5
48X22X36cm
21X9X8
51X25X30cm
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PDF
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Untitled
Abstract: No abstract text available
Text: 500 mW EPITAXIAL PLAN AR DIODES D ata Sh eet miconductor Features • PLANAR PROCESS ■ INDUSTRY STANDARD DO-35 PACKAG E ■ 500 mW POWER DISSIPATION ■ M EETS UL SPECIFICATION 94V-0 IN4448 E le c t r ic a l C h a r a c t e r is t ic s @ 2 5 ° C . M axim u m R a tin g s
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OCR Scan
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DO-35
IN4448
51X25X30cm
21X21X5
47X22X27cm
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PDF
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Untitled
Abstract: No abstract text available
Text: 500 mW EPITAXIAL PLANAR DIODES D ata Sheet m iconductor Features • PLANAR PROCESS ■ INDUSTRY STANDARD DO-35 PACKAG E ■ 500 mW POWER DISSIPATION ■ MEETS UL SPECIFICATION 94V-0 1N4151 E le c t r ic a l C h a r a c t e r is t ic s @ 2 5 ° C . M a x h n u n R atings
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OCR Scan
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DO-35
1N4151
IN4151
51X25X30cm
21X21X5
47X22X27cm
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PDF
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Untitled
Abstract: No abstract text available
Text: 250 mW EPITA XIA L PLANAR DIODES D a ta Sheet Semiconductor Mechanical Dimensions JEDEC DO-35 . t .060.1 n .120 .200 " I . 1.00 tVD. r 1 t Features • INDUSTRY STANDARD DO-35 PACKAGE ■ MEETS UL SPECIFICATION 94V-0 ■ PLANAR PROCESS ■ 250 mW POWER DISSIPATION
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OCR Scan
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DO-35
1N914
21X21X5
48X22X36cm
21X9X8
51X25X30cm
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet 200 mW EPITAXIAL PLANAR DIODES Semiconductor Mechanical Dimensions Description Pin 3 Pin 1HC Pin 2 Features • INDUSTRY STANDARD SOT-23 PACKAGE ■ MEETS UL SPECIFICATION 94V-0 ■ PLANAR PROCESS ■ 200 mW POWER DISSIPATION E le c tr ic a l C h a r a c te r is tic s 9
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OCR Scan
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OT-23
B4148
21X21X5
48X22X36cm
21X9X8
51X25X30cm
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Untitled
Abstract: No abstract text available
Text: 200 mW EPITAXIAL PLANAR DIODES D a ta Sheet Semiconductor Mechanical Dimensions Description Pin 3 1 P ln lN C ! Pin 2 Features • PLANAR PROCESS ■ INDUSTRY STANDARD SOT-23 PACKAG E ■ 200 mW POWER DISSIPATION ■ M EETS UL SPECIFICATION 94V-0 E le c t r ic a l C h a r a c t e r is t ic s 6
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OCR Scan
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OT-23
BBAV70
51X25X30cm
21X21X5
47X22X27cm
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PDF
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Untitled
Abstract: No abstract text available
Text: 200 mW EPITAXIAL PLANAR DIODES D ata Sheet Semiconductor Description Mechanical Dimensions Pin 3 PlnlNC Pin 2 Features • INDUSTRY STANDARD SOT-23 PACKAGE ■ M EETS UL SPECIFICATION 94V-0 ■ PLANAR PRO CESS ■ 200 mW POWER DISSIPATION E le c t r ic a l C h a r a c t e r is t ic s
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OCR Scan
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OT-23
BBAV99
21X21X5
48X22X36cm
21X9X8
51X25X30cm
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Untitled
Abstract: No abstract text available
Text: D atash eet 500 mW EPITAXIAL PLAN AR DIODES Semiconductor M echanical Dim ensions JEDEC DO-35 . t .0 6 0 1 .0 90 Ip 1 .1 2 0 , 1 .0 0 h D . , 1 1 t .0 24 typ. Features • PLANAR PROCESS ■ INDUSTRY STANDARD DO-35 PACKAG E ■ 500 mW POWER DISSIPATION ■ M EETS UL SPECIFICATION 94V-0
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OCR Scan
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DO-35
IN4148
51X25X30cm
21X21X5
47X22X27cm
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet 1.0 Amp SURFACE MOUNT PLASTIC SILICON DIODES Semiconductor Mechanical Dimensions Description Package |* 4.3/4.7 -*j ♦ Features a LOW COST B LOW FORWARD VOLTAGE WITH LOW LEAKAG E CURRENT a HIGH CURRENT CAPABILITY B M EETS UL SPECIFICATION 94V-0
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51X25X30cm
21X21X5
47X22X27cm
KBPC10
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Untitled
Abstract: No abstract text available
Text: 2 W att ZEN ER DIODES M V to 200V D a ta Sheet iemiconductor Features • PRO ELECTRON REGISTRATION ■ HIGH SURGE CAPABILITY—50 W 10mA Maximum Ratings ■ WIDE VOLTAGE RAN G E-34 to 200V ■ MEETS UL SPECIFICATION 84V-0 Units BZY47C3V3.C200 DC Power Dissipation with TA = > = 70°C .PD
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BZY47C3V3.
51X25X30cm
21X21X5
47X22X27cm
KBPC10
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Untitled
Abstract: No abstract text available
Text: Data Sheet 1/2Watt ZENER DIODES 4.7V to 24V semiconductor Mechanical Dimensions JEDEC DO-35 M § T .0601 .090 I 1 _L 1 120 .200 r . 1.00 Min. 1 " ~ T . Features • WIDE VOLTAGE RANGE ■ 5 & 10% VOLTAGE TOLERANCES AVAILABLE ■ MEETS UL SPECIFICATION 94V-0
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1N5230.
Zener25
21X21X5
48X22X36cm
21X9X8
51X25X30cm
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PDF
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Untitled
Abstract: No abstract text available
Text: C l Semiconductor Data Sheet 1 W att ZENER DIODES (& 3V to 100V Mechanical Dimensions JEDEC DO-41 i * T .0801 205 .160 t . 1.00 M in. * _L 1 t Features • WIDE VOLTAGE RANGE ■ MEETS UL SPECIFICATION 94V-0 ■ 5 & 10% VOLTAGE TOLERANCES AVAILABLE Maximum Ratings
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DO-41
21X21X5
48X22X36cm
21X9X8
51X25X30cm
47X22X27cm
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Untitled
Abstract: No abstract text available
Text: Data Sheet 2.4V to 110V M LL ZEN ER DIODES 1/2 Watt Semiconductor S Mechanical Dimensions Description -K U E W U M S - - 1 for BAND I 1 O1 f* _ M 1 / ( ) o m tu m 0014 (0 4 0 0 •* " ■ ’x '- h m 0 1 4 6 0 .seat <* M , 0191(3.a tT ). D im ensions in in che s
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RANGES24
51X25X30cm
21X21X5
47X22X27cm
KBPC10
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