RF3-50
Abstract: POWER456
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
RF3-50
POWER456
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CMPA801B025
Abstract: CMPA801B025F x-band mmic 3.5 DC Jack
Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher
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CMPA801B025F
CMPA801B025F
CMPA80
1B025F
CMPA801B025
x-band mmic
3.5 DC Jack
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CMPA801B025F
Abstract: CMPA801B025 cree rf 1B025F package 440208 cree rf cmpa801b025f
Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher
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CMPA801B025F
CMPA801B025F
CMPA80
1B025F
CMPA801B025
cree rf
package 440208
cree rf cmpa801b025f
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CMPA801B025
Abstract: X-band Internally Matched Power GaN HEMTs
Text: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher
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CMPA801B025F
CMPA801B025F
CMPA80
1B025F
CMPA801B025
X-band Internally Matched Power GaN HEMTs
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Untitled
Abstract: No abstract text available
Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher
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CMPA801B025F
CMPA801B025F
CMPA80
1B025F
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Untitled
Abstract: No abstract text available
Text: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher
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CMPA801B025F
CMPA801B025F
CMPA80
1B025F
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Untitled
Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
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CMPA5585025F
Abstract: power transistor gaas x-band CMPA5585025F-TB
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
power transistor gaas x-band
CMPA5585025F-TB
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x-Band Hemt Amplifier
Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
x-Band Hemt Amplifier
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Untitled
Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
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Untitled
Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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Original
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PDF
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
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Untitled
Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher
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Original
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PDF
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
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Untitled
Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher
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Original
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PDF
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
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Untitled
Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
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