FL014
Abstract: MARKING 67A marking code 67A 67a code marking TO-261AA Package code 67a IRFL014
Text: IRFL9014PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Min. Typ. Max. Units Conditions -60 ––– ––– V VGS = 0V, ID = 250µA
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IRFL9014PbF
EIA-481
EIA-541.
EIA-418-1.
FL014
MARKING 67A
marking code 67A
67a code marking
TO-261AA Package
code 67a
IRFL014
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IRFL9014PBF
Abstract: FL014 IRF 100A AN-994 irf* p-channel sot-223 95153 TO-261AA DSS 1630
Text: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A
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IRFL9014PbF
OT-223
EIA-481
EIA-541.
EIA-418-1.
IRFL9014PBF
FL014
IRF 100A
AN-994
irf* p-channel sot-223
95153
TO-261AA
DSS 1630
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FL014
Abstract: FL014 Example AN-994 IRFL9014 IRFL4310
Text: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier
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0863A
IRFL9014
OT-223
OT-223
IRFL014
FL014
FL014
FL014 Example
AN-994
IRFL9014
IRFL4310
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FL014
Abstract: IRFL9014PBF AN-994
Text: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A
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IRFL9014PbF
OT-223
12-Mar-07
FL014
IRFL9014PBF
AN-994
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91195
Abstract: AN-994 VISHAY SOT LOT CODE International Rectifier TO-261AA
Text: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A
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IRFL9014PbF
OT-223
08-Mar-07
91195
AN-994
VISHAY SOT LOT CODE
International Rectifier TO-261AA
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Untitled
Abstract: No abstract text available
Text: IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • -60 RDS(on) () VGS = -10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S SOT-223 DESCRIPTION G D
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IRFL9014,
SiHFL9014
OT-223
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFL9014 MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A S Description S O T -2 2 3 The SOT-223 package is designed for surface-mount using
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IRFL9014
OT-223
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IRFL9014
Abstract: sot-223 MOSFET AN-994
Text: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier
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0863A
IRFL9014
OT-223
performanc10)
IRFL9014
sot-223 MOSFET
AN-994
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irfl9014
Abstract: No abstract text available
Text: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier
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0863A
IRFL9014
OT-223
08-Mar-07
irfl9014
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IRFL9014
Abstract: AN-994
Text: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier
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0863A
IRFL9014
OT-223
12-Mar-07
IRFL9014
AN-994
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IRFL9014
Abstract: SiHFL9014 SiHFL9014-E3 IRFL9014TR
Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 • Dynamic dV/dt Rating Qgs (nC) 3.8 • Repetitive Avalanche Rated 5.1 • P-Channel Qgd (nC) Configuration
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IRFL9014,
SiHFL9014
OT-223
OT-223
18-Jul-08
IRFL9014
SiHFL9014-E3
IRFL9014TR
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IRFL9014PBF
Abstract: package marking IRFL9014
Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 • Dynamic dV/dt Rating Qgs (nC) 3.8 • Repetitive Avalanche Rated 5.1 • P-Channel Qgd (nC) Configuration
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IRFL9014,
SiHFL9014
OT-223
OT-223
12-Mar-07
IRFL9014PBF
package marking IRFL9014
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SiHFL9014-GE3
Abstract: IRFL9014 SiHFL9014 SiHFL9014-E3
Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 G D G • Halogen-free According to IEC 61249-2-21
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IRFL9014,
SiHFL9014
OT-223
2002/95/EC
18-Jul-08
SiHFL9014-GE3
IRFL9014
SiHFL9014-E3
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IRFL9014
Abstract: SiHFL9014 SiHFL9014-E3 IRFL9014PBF
Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 • Dynamic dV/dt Rating Qgs (nC) 3.8 • Repetitive Avalanche Rated 5.1 • P-Channel Qgd (nC) Configuration
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IRFL9014,
SiHFL9014
2002/95/EC
OT-223
OT-223
18-Jul-08
IRFL9014
SiHFL9014-E3
IRFL9014PBF
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siliconix sot-223 marking
Abstract: No abstract text available
Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21
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IRFL9014,
SiHFL9014
2002/95/EC
OT-223
11-Mar-11
siliconix sot-223 marking
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Untitled
Abstract: No abstract text available
Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21
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IRFL9014,
SiHFL9014
OT-223
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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irfl9014trpbf
Abstract: IRFL9014TR SiHFL9014TR-GE3
Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21
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IRFL9014,
SiHFL9014
2002/95/EC
OT-223
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
irfl9014trpbf
IRFL9014TR
SiHFL9014TR-GE3
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Untitled
Abstract: No abstract text available
Text: IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S SOT-223 Surface Mount
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IRFL9014,
SiHFL9014
OT-223
OT-223
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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1N4148
Abstract: 2SJ326-Z BSP170P DAC7551 DFN-10 IRFL9014 NTF2955 TP2510 XTR111
Text: XTR111 XRT1 11 SBOS375 − NOVEMBER 2006 Precision Voltage-to-Current Converter/Transmitter FEATURES DESCRIPTION D EASY-TO-DESIGN INPUT/OUTPUT RANGES: The XTR111 is a precision voltage-to-current converter designed for the standard 0mA−20mA or 4mA−20mA
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XTR111
SBOS375
XTR111
0mA-20mA
4mA-20mA
0mA-20mA,
4mA-20mA,
5mA-25mA
1N4148
2SJ326-Z
BSP170P
DAC7551
DFN-10
IRFL9014
NTF2955
TP2510
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xtr111
Abstract: 5mA-25mA P-MOSFET transistor NEC dfn10
Text: XTR111 XRT1 11 SBOS375 − NOVEMBER 2006 Precision Voltage-to-Current Converter/Transmitter FEATURES DESCRIPTION D EASY-TO-DESIGN INPUT/OUTPUT RANGES: The XTR111 is a precision voltage-to-current converter designed for the standard 0mA−20mA or 4mA−20mA
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XTR111
SBOS375
0mA-20mA,
4mA-20mA,
5mA-25mA
XTR111
0mA-20mA
4mA-20mA
P-MOSFET transistor
NEC dfn10
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LD67
Abstract: 1D11A AN-994 IRFL9014 package marking IRFL9014
Text: PD-9.863 International Ie Rectifier IRFL9014 HEXFET® Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling ^ dss - "6 0 V ^DS on = 0-50É2
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OCR Scan
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IRFL9014
OT-223
IT13tÃ
LD67
1D11A
AN-994
package marking IRFL9014
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Untitled
Abstract: No abstract text available
Text: PD 9.863A International k ?r Rectifier IRFL9014 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling V d s s = -6 0 V R DS on = 0 -5 0 Q
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OCR Scan
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IRFL9014
OT-223
GD2b44cJ
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mosfet 10d
Abstract: P-CHANNEL 90A POWER MOSFET AN-994 IRFL9014 1D11A sot-223 body marking A G Q E
Text: PD-9.863 International Bgg Rectifier IRFL9014 HEXFET P o w e r M O S F E T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling VDSS = -60 V F * D S o n -
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IRFL9014
OT-223
mosfet 10d
P-CHANNEL 90A POWER MOSFET
AN-994
IRFL9014
1D11A
sot-223 body marking A G Q E
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