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    PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 Search Results

    PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    82c08

    Abstract: smd transistor A7 5962R9571401QRC 5962R9571401QXC 5962R9571401VRC 5962R9571401VXC HS1-82C08RH-8 HS-82C08RH HS9-82C08RH-8 30403 smd
    Text: HS-82C08RH TM Data Sheet August 2000 File Number Radiation Hardened 8-Bit Bus Transceiver Features The Intersil HS-82C08RH is a radiation-hardened octal bus transceiver with three-state outputs. It is manufactured using a self-aligned, junction isolated CMOS process and is


    Original     		HS-82C08RH HS-82C08RH HS-80C08RH 82c08 smd transistor A7 5962R9571401QRC 5962R9571401QXC 5962R9571401VRC 5962R9571401VXC HS1-82C08RH-8 HS9-82C08RH-8 30403 smd PDF

    taos ic

    Abstract: PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 Light-to-Voltage Linear Converter TSL257T
    Text: TSL257T HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER r r TAOS065B − APRIL 2007 D Converts Light Intensity to Output Voltage D Monolithic Silicon IC Containing PACKAGE T 4-LEAD SMD TOP VIEW Photodiode, Operational Amplifier, and Feedback Components High Sensitivity


    Original     		TSL257T TAOS065B TSL257T taos ic PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 Light-to-Voltage Linear Converter PDF

    Untitled

    Abstract: No abstract text available
    Text: OE Type High Precision Crystal Oscillator RoHS Compliant Standard 1.Typical 5.0 x 3.2 x 1.15 mm ceramic SMD package. 2.±10ppm over -20oC to +70oC,±20ppm over -40oC to +85oC Including 10years Aging. 3.Ideal for Wireless LAN Hot Spot applications at 40 MHz.


    Original     		10ppm -20oC 20ppm -40oC 10years XO-0030-D PDF

    Untitled

    Abstract: No abstract text available
    Text: TSL238T HIGH-SENSITIVITY LIGHT-TO-FREQUENCY CONVERTER r r TAOS080D − MAY 2007 D High-Resolution Conversion of Light PACKAGE T 4-LEAD SMD TOP VIEW Intensity to Frequency With No External Components High Irradiance Responsivity . . . 3.4 kHz/(mW/cm2) at λp = 640 nm


    Original     		TSL238T TAOS080D TSL238T PDF

    Untitled

    Abstract: No abstract text available
    Text: TSL238T HIGH-SENSITIVITY LIGHT-TO-FREQUENCY CONVERTER r r TAOS080B − APRIL 2007 D High-Resolution Conversion of Light D D D D D D D Intensity to Frequency With No External Components High Irradiance Responsivity . . . 3.4 kHz/ mW/cm2 at λp = 640 nm Low Dark Frequency . . . < 6 Hz at 505 C


    Original     		TSL238T TAOS080B TSL238T PDF

    PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2

    Abstract: TSL237T CURRENT-TO-FREQUENCY tsl23
    Text: TSL237T HIGH-SENSITIVITY LIGHT-TO-FREQUENCY CONVERTER r r TAOS055G − JUNE 2007 D High-Resolution Conversion of Light PACKAGE T 4-LEAD SMD TOP VIEW Intensity to Frequency With No External Components High Irradiance Responsivity . . . 1.2 kHz/(mW/cm2) at λp = 640 nm


    Original     		TSL237T TAOS055G TSL237T PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 CURRENT-TO-FREQUENCY tsl23 PDF

    OTETGCL-NF-156

    Abstract: No abstract text available
    Text: OT Type for PECL/LVDS Crystal Oscillator RoHS Compliant Standard FEATURE 1.Typical 7.5 x 5.0 x 1.9 mm 6 Pads Ceramic SMD package. 2.Tight symmetry 45 to 55% available. 3.Low phase jitter. 4.Complementary output. 5.Grounded cover for reduced EMI. Actual Size


    Original     		Integrated12KHz 20MHz) 88MHzFo160MHz XO-0054-J OTETGCL-NF-156 PDF

    BL6211MM

    Abstract: marking aAG 6-PIN abg smd code 3000 Watt BTL Audio Amplifier 3000 watt audio circuit diagram 3000 watt power amplifier circuit diagram marking aAG BL6211 MARKING SMD IC CODE 10 pin smd marking 1F 6 PIN
    Text: BL6211 1.25 Watt Fully Differential Audio Power Amplifier With Internal Feedback Resistors 1 FEATURES Fully differential amplifier Improved PSRR at 217Hz VDD>3.0V 86dB (typ) Power output at 5.0V & 1% THD 1.25W (typ) Power output at 3.6V & 1% THD 0.6W (typ)


    Original     		BL6211 217Hz BL6211 BL6211ITLX BL6211MM BL6211MM marking aAG 6-PIN abg smd code 3000 Watt BTL Audio Amplifier 3000 watt audio circuit diagram 3000 watt power amplifier circuit diagram marking aAG MARKING SMD IC CODE 10 pin smd marking 1F 6 PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: The following document contains information on Cypress products. MB39C601 ASSP TRIAC Dimmable LED Driver IC for LED Lighting Data Sheet Full Production Publication Number MB39C601_DS405-00008 CONFIDENTIAL Revision 2.1 Issue Date January 31, 2014 D a t a S h e e t


    Original     		MB39C601 MB39C601 DS405-00008 DS405-00008-2v1-E, PDF

    69XXX

    Abstract: RMA16 Reliability VP12 Intel reflow soldering profile BGA Reliability, Inc VP12 CT85 transistor P32 smd vp7 smd p35 smd CFG11
    Text: &+,36 &+,37,36  Intel Corporation 2200 Mission College Blvd Santa Clara, CA 95052-8119 USA CT85.1/3-99 Guidelines for Using 69xxx mBGA in Surface Mount Technologies 1.0 Introduction In general, the differences between the use of standard surface mount components such as Plastic Quad


    Original     		69xxx 16x16 RMA16 Reliability VP12 Intel reflow soldering profile BGA Reliability, Inc VP12 CT85 transistor P32 smd vp7 smd p35 smd CFG11 PDF

    tsl1x

    Abstract: PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 TSL12 TSL12T TSL13 TSL13T
    Text: TSL12T, TSL13T LIGHT-TO-VOLTAGE CONVERTERS r r TAOS062D − APRIL 2007 D Converts Light Intensity to Output Voltage D Monolithic Silicon IC Containing D D D D D PACKAGE T 4-LEAD SMD TOP VIEW Photodiode, Transconductance Amplifier, and Feedback Components


    Original     		TSL12T, TSL13T TAOS062D TSL12T) TSL12T TSL13T tsl1x PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 TSL12 TSL13 PDF

    y4 smd transistor

    Abstract: smd g2a smd g2b 30373 y0 smd transistor y4 smd y6 smd transistor smd transistor y5 HS SMD SMD Transistor Y6
    Text: HS-54C138RH T CT DUC PRO PRODU E T E E 8 L T 3 t 1 O U OBS UBSTIT S/HCTS Center a S C port c H s E t , / L 8 om 13 Sheetup SIB Data POS S/ACTS hnical S intersil.c . AC ur Tec www ct o RSIL or a t n E co 8-INT 1-88 Radiation Hardened 3-Line to 8-Line Decoder/Demultiplexer


    Original     		HS-54C138RH CTS138, HS-54C138RH y4 smd transistor smd g2a smd g2b 30373 y0 smd transistor y4 smd y6 smd transistor smd transistor y5 HS SMD SMD Transistor Y6 PDF

    82c08

    Abstract: 5962R9571401QRC 5962R9571401QXC 5962R9571401VRC 5962R9571401VXC HS-82C08RH CERAMIC FLATPACK
    Text: HS-82C08RH Radiation Hardened 8-Bit Bus Transceiver February 1996 Features Functional Diagram • Devices QML Qualified in Accordance With MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95714 and Intersil’ QM Plan


    Original     		HS-82C08RH MIL-PRF-38535 SA2997 -55oC 125oC HS-82C08R 82c08 5962R9571401QRC 5962R9571401QXC 5962R9571401VRC 5962R9571401VXC HS-82C08RH CERAMIC FLATPACK PDF

    y4 smd

    Abstract: y6 smd transistor y6 smd y4 smd transistor smd g2b smd g2a Y5 smd 30373 smd y7 smd transistor y5
    Text: [ /Title HS54C13 8RH /Subject (Radiation Hardened 3Line to 8-Line Decod er/Dem ultiplexer) /Autho r () /Keywords (Intersil Corporation, semiconductor, Radiation Hardened, RH, Rad Hard, QML, Satellite, SMD, HS-54C138RH T CT DUC PRO PRODU E T E E 8 L T 3 O


    Original     		HS54C13 HS-54C138RH HS-54C138RH 54LS138 y4 smd y6 smd transistor y6 smd y4 smd transistor smd g2b smd g2a Y5 smd 30373 smd y7 smd transistor y5 PDF

    TLA04AAA

    Abstract: No abstract text available
    Text: LMV225/LMV226/LMV228 RF Power Detector for CDMA and WCDMA General Description Features The LMV225/LMV226/LMV228 are 30 dB RF power detectors intended for use in CDMA and WCDMA applications. The device has an RF frequency range from 450 MHz to 2 GHz. It provides an accurate temperature and supply compensated output voltage that relates linearly to the RF input


    Original     		LMV225/LMV226/LMV228 LMV225 TLA04AAA PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS405-00010-2v0-E ASSP High Power Factor LED Driver IC for LED lighting MB39C602  DESCRIPTION MB39C602 is a flyback type switching regulator contorller IC. The LED current is regulated by controlling the switching on-time depending on the LED load.


    Original     		DS405-00010-2v0-E MB39C602 MB39C602 PDF

    RESISTOR NETWORK SMD 8 PIN array isolated 2512

    Abstract: 88em8011 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606
    Text: Cover 88EM8011 Power Factor Correction Controller Datasheet Patents, Patents Pending Including US Pat. Nos. 7,266,001 and 7,292,013 Doc. No. MV-S104861-00, Rev. November 28, 2007 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8011


    Original     		88EM8011 MV-S104861-00, 88EM8011 MV-S104861-00 RESISTOR NETWORK SMD 8 PIN array isolated 2512 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606 PDF

    E-LIS2L02AS4

    Abstract: E-LIS2L02AS4TR JESD97 LIS2L02AS4 SO24
    Text: LIS2L02AS4 MEMS INERTIAL SENSOR: 2-Axis - ±2g/±6g LINEAR ACCELEROMETER 1 • ■ ■ ■ ■ ■ ■ ■ 2 Features Figure 1. Package 2.4V TO 5.25V SINGLE SUPPLY OPERATION LOW POWER CONSUMPTION ±2g/±6g USER SELECTABLE FULL-SCALE 0.3mg RESOLUTION OVER 100Hz


    Original     		LIS2L02AS4 100Hz LIS2L02AS4 E-LIS2L02AS4 E-LIS2L02AS4TR JESD97 SO24 PDF

    12 volts 50 watt amplifier schematic diagram

    Abstract: schematic diagram power amplifier free schematic diagram power amplifier free a C3216X5R1A475KT 2 Watt rf Amplifier gsm signal amplifier circuit diagram RAYTHEON RMBA09500-58 G655966 2200J
    Text: Raytheon Raytheon Commercial Electronics RMBA09500-58 Cellular/GSM 2 Watt Linear GaAs MMIC Power Amplifier The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses RaytheonÕs pHEMT process. It is designed for use as a driver


    Original     		RMBA09500-58 RMBA09500 12 volts 50 watt amplifier schematic diagram schematic diagram power amplifier free schematic diagram power amplifier free a C3216X5R1A475KT 2 Watt rf Amplifier gsm signal amplifier circuit diagram RAYTHEON RMBA09500-58 G655966 2200J PDF

    Untitled

    Abstract: No abstract text available
    Text: LIS2L02AQ INERTIAL SENSOR: 2Axis - 2g/6g LINEAR ACCELEROMETER PRODUCT PREVIEW • 2.4V TO 5.25V SINGLE SUPPLY OPERATION THE SENSITIVITY IS ADJUSTED WITH A TOTAL ACCURACY OF ±10% THE OUTPUT VOLTAGE, OFFSET, SENSITIVITY AND TEST VOLTAGE ARE RATIOMETRIC TO THE SUPPLY VOLTAGE


    Original     		LIS2L02AQ LIS2L02AQ PDF

    POLYFUSE BLOCK DIAGRAM

    Abstract: POLYFUSE 5v smd transistor 2g LIS3L02AQ ACCELEROMETER sensing systems and CIRCUIT
    Text: LIS3L02AQ INERTIAL SENSOR: 3Axis - 2g/6g LINEAR ACCELEROMETER PRODUCT PREVIEW • 3V TO 5.25V SINGLE SUPPLY OPERATION THE SENSITIVITY IS ADJUSTED WITH A TOTAL ACCURACY OF ±10% THE OUTPUT VOLTAGE, OFFSET, SENSITIVITY AND TEST VOLTAGE ARE RATIOMETRIC TO THE SUPPLY VOLTAGE


    Original     		LIS3L02AQ LIS3L02AQ POLYFUSE BLOCK DIAGRAM POLYFUSE 5v smd transistor 2g ACCELEROMETER sensing systems and CIRCUIT PDF

    LIS3L02AQ

    Abstract: No abstract text available
    Text: LIS3L02AQ INERTIAL SENSOR: 3Axis - 2g/6g LINEAR ACCELEROMETER 1 • ■ ■ ■ ■ ■ ■ 2 Figure 1. Package FEATURES 2.4V TO 3.6V SINGLE SUPPLY OPERATION 0.5mg RESOLUTION OVER 100Hz BW 2g/6g USER SELECTABLE FULL-SCALE OUTPUT VOLTAGE, OFFSET AND SENSITIVITY RATIOMETRIC TO THE


    Original     		LIS3L02AQ 100Hz LIS3L02AQ PDF

    TLI4961-1L

    Abstract: smd hall effect sensor TLI4961-1 PG-SSO-3-2
    Text: TLI4961-1L TLI4961-1M Hall Effect Latch for Industrial Applications Data Sheet Revision 1.1, 2012-10-15 Sense & Control Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		TLI4961-1L TLI4961-1M TLI4961-1L smd hall effect sensor TLI4961-1 PG-SSO-3-2 PDF

    LM4890s

    Abstract: lm487
    Text: LM4890 LM4890 1 Watt Audio Power Amplifier Literature Number: SNAS138K LM4890 1 Watt Audio Power Amplifier General Description Key Specifications The LM4890 is an audio power amplifier primarily designed for demanding applications in mobile phones and other portable communication device applications. It is capable of


    Original     		LM4890 LM4890 SNAS138K LM4890s lm487 PDF