Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PACKAGES TYPES FOR MOSFET Search Results

    PACKAGES TYPES FOR MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    PACKAGES TYPES FOR MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor 351A

    Abstract: 1A smd mosfet smd 351a G3VM-401A AM164 photo LED G3VM-355J G3VM-2L smd 4n G3VM-xn
    Text: RELAYS SOLID STATE RELAYS MOSFET OUTPUT EXCEL type EPR A range of economical solid state, MOSFET output relays offering a wide choice of contact forms load voltages and package types. These relays offer an input to output isolation voltage of 3750Vac 1500Vac for SOP packages , fast turn times, and low resistances. All relays can be


    Original     		PDF 3750Vac 1500Vac PG/0641 smd transistor 351A 1A smd mosfet smd 351a G3VM-401A AM164 photo LED G3VM-355J G3VM-2L smd 4n G3VM-xn

    "thermal via" PCB D2PAK

    Abstract: JESD24-3 "thermal via" PCB D-PAK so8 pcb pattern double sided pcb, thermal via powersi so8 footprint AN-994 thermal PCB D2PAK IRF3706S
    Text: Evaluation of Power MOSFET Thermal Solutions for Desktop and Mobile Processor Power Tim McDonald and John Ambrus International Rectifier Corporation 233 Kansas Street El Segundo, CA 90245 USA [email protected], [email protected] as presented at PCIM China, March 2002


    Original     		PDF HFPC2001 AN-994, JESD24-3, "thermal via" PCB D2PAK JESD24-3 "thermal via" PCB D-PAK so8 pcb pattern double sided pcb, thermal via powersi so8 footprint AN-994 thermal PCB D2PAK IRF3706S

    PHP45NQ10TA

    Abstract: Ph9030l PMV213SN PHD66NQ03LT BUK9507-30B PHD78NQ BSH103 BUK95180-100A PSMN2R8-40PS BSH114
    Text: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4


    Original     		PDF

    PHD78NQ

    Abstract: BUK9507-30B BUK7608-40B PHB27NQ10T PHP18NQ10T ph43 PHD66NQ03LT BUK9575-100A PHP45NQ10TA si2302ds
    Text: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4


    Original     		PDF

    IXAN0021

    Abstract: MOSFET Based Chopper IXAN0022 VWM350-0075P FMM150-0075P IXUC100N055 IXUC200N055 VMM1500-0075P trench relay MOSFET Based Chopper applications
    Text: IXAN0021 New Trench Power MOSFETs in Isolated Packages Abstract Andreas Lindemann IXYS Semiconductor GmbH Postfach 1180, D { 68619 Lampertheim www.IXYS.net This paper presents a new family of power semiconductor components with low voltage trench MOSFETs in isolated packages: MOSFET and packaging technologies are brie y


    Original     		PDF IXAN0021 IXAN0022 IXAN0021 MOSFET Based Chopper IXAN0022 VWM350-0075P FMM150-0075P IXUC100N055 IXUC200N055 VMM1500-0075P trench relay MOSFET Based Chopper applications

    Transistor SMD SOT363 SC70

    Abstract: BSP254A D2Pak Package IRF540 complementary MOSFET Selection Guide PHD78NQ list of n channel fet IRF640 smd PSMN009-100W BUK7516
    Text: Semiconductors Power MOSFET Selection Guide 2002 / 2003 The evolution of our LVMOS strategy continues to go from strength to strength. This MOSFET selection guide summarises our portfolio releases to date. Some of our recent innovations include: LFPAK and QLPAK packages – see page 4-5 and 8-9 exciting additions to our portfolio that further extends your choice and, with ever-increasing demands for improved


    Original     		PDF

    complementary MOSFET 2sk

    Abstract: 2SK series transistor 2sk 2sk 2sj complementary mosfet 2sk to-92 2sk mosfet nec mosfet 2SK type UMOS-2 TO-220ISO
    Text: Low voltage MOSFET Short reference guide Introduction As a leading supplier of PowerMOSFET devices, NEC Electronics offers an extensive range of over 500 different devices suitable for 0.25 µm UMOS-4 28M cell/cm2 to provide low on-resistance RDS(on), avalanche capability, low gate charge and lower leakage current.


    Original     		PDF D17356EE1V0PF00 complementary MOSFET 2sk 2SK series transistor 2sk 2sk 2sj complementary mosfet 2sk to-92 2sk mosfet nec mosfet 2SK type UMOS-2 TO-220ISO

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors’ new SiliconMAXTM power MOSFET range - a next generation development of the company’s advanced TrenchMOS technology - brings the benefits of ultra-low RDS on and high-speed switching to applications requiring transistors with voltage


    Original     		PDF SCS63

    PQMD12

    Abstract: No abstract text available
    Text: Small & Powerful NXP MOSFETs and bipolar transistors in DFN1010 First 3 A transistors in a 1.1 mm² leadless plastic package This new product series, housed in tiny leadless packages and ideal for use in tightfootprint power management and load switches, includes small yet powerful high-Ptot


    Original     		PDF DFN1010 OT963 DFN1010B-6 DFN0806 PQMD12

    injector MOSFET driver

    Abstract: BUK9507-30B solenoid injector injector driver buk9535 sot669 BUK7909-75AIE BUK9214-30A BUK9Y19-55B diesel solenoid
    Text: Power MOSFETs for Automotive Applications Performance, quality, reliability Automotive Power MOSFETs NXP offers a highly flexible approach to power design for automotive systems. NXP is a global leader in the area of discrete power MOSFETs for automotive systems. An in-depth understanding of automotive


    Original     		PDF brb329 injector MOSFET driver BUK9507-30B solenoid injector injector driver buk9535 sot669 BUK7909-75AIE BUK9214-30A BUK9Y19-55B diesel solenoid

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    PH9025L

    Abstract: sot669 footprint PH2530L PH2030AL LFPAK footprint PCI compact PCB footprint lfpak sot669 package ph43 PH6530
    Text: LFPAK MOSFETs for computing applications Compact, high performance power for notebook and desktop PC, graphics cards and servers Part of an ever expanding portfolio that combines innovative packaging and TrenchMOS technologies NXP’s latest MOSFETs offer excellent power performance in the compact,


    Original     		PDF bra167 PH9025L sot669 footprint PH2530L PH2030AL LFPAK footprint PCI compact PCB footprint lfpak sot669 package ph43 PH6530

    to220 pcb footprint

    Abstract: "thermal via" PCB D2PAK LFPAK footprint Renesas LFPAK footprint POWERPAK SO8 TO220 HEATSINK DATASHEET thermal PCB D2PAK sot669 lfpak LFPAK package
    Text: LFPAK The Toughest Power-SO8 The evolution of Power MOSFET packages Typical TO220 construction TO220 is the ‘original’ through-hole power package. It is suitable for through-hole mounting and low-cost wave soldering. It also provides very low thermal resistances when mounted to a suitable heatsink.


    Original     		PDF soldering/sot669 to220 pcb footprint "thermal via" PCB D2PAK LFPAK footprint Renesas LFPAK footprint POWERPAK SO8 TO220 HEATSINK DATASHEET thermal PCB D2PAK sot669 lfpak LFPAK package

    Loctite 3567

    Abstract: underfill Kester FDZ202P fbga Substrate design guidelines reflow hot air BGA fine BGA thermal profile reball INTEL underfill SMT
    Text: Application Note 7001 March 2002 Guidelines for Mounting Fairchild’s BGA Packages Dennis Lang, Applications Engineer Introduction The development of MOSFETs in BGA packages was a technology breakthrough, producing a device that combined excellent thermal transfer characteristics, high-current handling capability, ultra-low profile


    Original     		PDF

    BUK2114

    Abstract: IRF540 n-channel MOSFET BATTERY CHARGER SMPS CIRCUIT DIAGRAM tea1506p tea1507 TEA1620 BUK2914-50SYTS BUK2114-50SYTS BU4508DX equivalent BU4522AX BUK2914
    Text: Power Management Power Management 189 Automotive MOSFETs General Purpose Automotive GPA TrenchMOS types in bold red represent new products 190 VDS RDS(ON) @VGS ID (max) SC73 (SOT223) (V) (mΩ) (V) 30 30 5 5 10 5 @ 25°C (A) 75 75 30 13 10 55 BUK6213-30A


    Original     		PDF OT223) BUK6213-30A BUK9213-30A BUK7604-40A BUK9604-40A OT404) OT428) BUK7605-30A BUK9605-30A OT226 BUK2114 IRF540 n-channel MOSFET BATTERY CHARGER SMPS CIRCUIT DIAGRAM tea1506p tea1507 TEA1620 BUK2914-50SYTS BUK2114-50SYTS BU4508DX equivalent BU4522AX BUK2914

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    charging ic laptop motherboard

    Abstract: ic laptop motherboard PMV213SN PMV117EN PMV31XN PMV45EN PMV56XN PMV60EN battery controller NXP PMV40UN
    Text: NXP 100-, 30-, and 20-V N-channel MOSFETs PMVseries in SOT23 packages Ultra-small µTrenchMOS MOSFETs in a SOT23 package Combining our expertise in package miniaturization and advanced Trench technology, these ultra-small µTrenchMOS™ MOSFETs, housed in tiny SOT23 packages, are an ideal choice for


    Original     		PDF MSD995 MSE146 charging ic laptop motherboard ic laptop motherboard PMV213SN PMV117EN PMV31XN PMV45EN PMV56XN PMV60EN battery controller NXP PMV40UN

    underfill

    Abstract: rework reflow hot air BGA Loctite PCB design for very fine pitch csp package thick bga die size Loctite 3567 Intel BGA Solder FDZ202P Fairchild, BGA fbga Substrate design guidelines
    Text: Application Note 7001 March 2004 Guidelines for Using Fairchild’s BGA Packages Dennis Lang, Applications Engineer Introduction The development of MOSFETs in Chip Scale Package BGA packages was a technology breakthrough, producing a device that combined excellent thermal transfer characteristics, high-current handling


    Original     		PDF

    equivalent L6565

    Abstract: AP-600 STW7NK90Z TO220 PMOS L6565 STD1LNK60Z-1 STQ2HNK60ZR-AP STQ2NK60ZR-AP STQ3NK50ZR-AP STS1HNK60
    Text: Power MOSFETs for metering High-voltage power MOSFETs the optimal choice for metering STMicroelectronics offers a wide selection of high voltage power MOSFETs for power-meter designers who require an efficient solution for either single or three-phase meters.


    Original     		PDF STW3N150 STEVAL-ISA034V1 O-220 O-247 FLMETER0507 equivalent L6565 AP-600 STW7NK90Z TO220 PMOS L6565 STD1LNK60Z-1 STQ2HNK60ZR-AP STQ2NK60ZR-AP STQ3NK50ZR-AP STS1HNK60

    sot669 package

    Abstract: LFPAK footprint 7.5B 35 BUK7Y80-150B BUK9Y19-55B SOT669 BUK7Y13-40B BUK9Y11-30B BUK9Y14-40B NXP MOSFETs
    Text: HPA TrenchMOS in LFPAK MOSFETs that pack-a-punch in automotive power Delivering the ultimate in performance, NXP’s new range of High Performance Automotive HPA MOSFETs in the compact, thermally enhanced LFPAK provides reduced on-resistance along with improved ruggedness and thermal performance. All this in a very small package


    Original     		PDF

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    transistor 2SK1603

    Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
    Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all


    OCR Scan     		PDF OT-89, T0-220 2SK1488 2SK1865SM 2SK1531 2SK1745 2SK2057 2SK1544 O-220AB 2SK1723 transistor 2SK1603 2SK1603 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358

    K1118

    Abstract: k1118 transistor MOSFET transistor k1118 transistor k1118 2SK1603 2SK1723 transistor 2SK1603 2SK1118 MOSFET 2SK1358 Transistor Guide transistor SMD 2S
    Text: High Voltage MOSFETs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all possible designs.


    OCR Scan     		PDF OT-89, T0-220 2SK1488 2SK1865SM 2SK1723 2SK1769 2SK1603 2SK1356 2SK1767 2SK1913 K1118 k1118 transistor MOSFET transistor k1118 transistor k1118 transistor 2SK1603 2SK1118 MOSFET 2SK1358 Transistor Guide transistor SMD 2S

    magnatec mosfets

    Abstract: No abstract text available
    Text: Semeiab Group Operating Divisions Semeiab - four core divisions - Power, Military-Aerospace, RF and Opto Diamond Enhanced MOSFETs Semeiab is the world's first manufacturer to offer diamond enhanced heatsinks for power MOSFETs, using a unique patented process. This


    OCR Scan     		PDF