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    PARALLELING Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    74178PC Rochester Electronics LLC 74178 - Parallel In Parallel Out Visit Rochester Electronics LLC Buy
    DM74LS503N Rochester Electronics LLC DM74LS503 - Serial In Parallel Out Visit Rochester Electronics LLC Buy
    74AS632FN Rochester Electronics LLC 74AS632 - 32-Bit Parallel Error Detection/Correction Visit Rochester Electronics LLC Buy
    SN7495AJ Rochester Electronics LLC 7495A - 4-Bit Parallel-Access Shift Registers Visit Rochester Electronics LLC Buy
    54L164DM Rochester Electronics LLC 54L164 - 8-Bit parallel Serial Shift Register Visit Rochester Electronics LLC Buy
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    PARALLELING Price and Stock

    OmniOn Power Inc EVAL_MDT040A0X-SRPHZ-PARALLELING

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    OmniOn Power Inc EVAL-APTS050A0X3-SRPHZ-PARALLELING

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    OmniOn Power Inc EVAL_MDT040A0X-SRPHZ PARALLELING

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    Avnet Americas EVAL_MDT040A0X-SRPHZ PARALLELING Bulk 40 Weeks 1
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    OmniOn Power Inc EVAL APTS050A0X3-SRPHZ PARALLELING

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    Avnet Americas EVAL APTS050A0X3-SRPHZ PARALLELING Bulk 40 Weeks 1
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    TE Connectivity 1810PX

    Industrial Relays 1810PX
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    TTI 1810PX Each 18 1
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    PARALLELING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    UFNZ40

    Abstract: No abstract text available
    Text: UFNZ40 UFNZ42 POWER MOSFET TRANSISTORS 50 Volt, 0.028 Ohm N-Channel FEATURES DESCRIPTION • • • • C o m p a c t Plastic Package Fast S w itc h in g L o w D rive C urrent Ease o f Paralleling These lo w v o lta g e p o w e r M O S FETS have been designed fo r o p tim u m p e rfo rm a n c e in lo w


    OCR Scan     		UFNZ40 UFNZ42 UFNZ40, PDF

    UFN140

    Abstract: UFN143 kd 617
    Text: POWER MOSFET TRANSISTORS “ ui 100 Volt, 0.085 Ohm N-Channel UFN142 ufni43 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		UFN142 ufni43 UFN140 UFN141 UFN142 UFN143 Q2173 UFN140 UFN143 kd 617 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFPC40, SiHFPC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling


    Original     		IRFPC40, SiHFPC40 2002/95/EC O-247AC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    IRF820PBF

    Abstract: No abstract text available
    Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		IRF820, SiHF820 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF820PBF PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRFZ34, SiHFZ34 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    AOD5B60

    Abstract: No abstract text available
    Text: AOD5B60D 600V, 5A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt


    Original     		AOD5B60D AOD5B60D 1E-06 1E-05 AOD5B60 PDF

    910410

    Abstract: No abstract text available
    Text: IRF710, SiHF710 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) () VGS = 10 V Qg (Max.) (nC) 17 • Fast Switching Qgs (nC) 3.4 • Ease of Paralleling Qgd (nC) 8.5 Configuration Available • Repetitive Avalanche Rated


    Original     		IRF710, SiHF710 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 910410 PDF

    irfbe30

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30 PDF

    D06E60

    Abstract: PG-TO252-3 IDD06E60 D06E6 marking diode 6a
    Text: IDD06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling


    Original     		IDD06E60 IDD06E60 PG-TO252-3-1 D06E60 726-IDD06E60 D06E60 PG-TO252-3 D06E6 marking diode 6a PDF

    D 92 M - 02 DIODE

    Abstract: No abstract text available
    Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		IRF820, SiHF820 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 D 92 M - 02 DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: SKCD 31 C 120 I HD Absolute Maximum Ratings Symbol Conditions Values VRRM Tj = 25 °C, IR = 0.1 mA Tj = 25 °C IF = 55 A 1 VRRM = 1200 V Size: 5.6 x 5.6 mm² SKCD 31 C 120 I HD Features • high current density • easy paralleling due to a small forward


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SKCD 61 C 120 I HD Absolute Maximum Ratings Symbol Conditions Values VRRM Tj = 25 °C, IR = 0.2 mA Tj = 25 °C IF = 115 A 1 VRRM = 1200 V Size: 7.8 x 7.8 mm mm² SKCD 61 C 120 I HD Features • high current density • easy paralleling due to a small forward


    Original     		PDF

    any circuit using irf830

    Abstract: No abstract text available
    Text: IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF830, SiHF830 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 any circuit using irf830 PDF

    power MOSFET IRF610

    Abstract: No abstract text available
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		IRF610, SiHF610 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 power MOSFET IRF610 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET BVDgs RdS ON (max) If Ordering Information 60V 5n 75mA b v dss / Order Number / Package TO-92 2N7000 Features I i Free from secondary breakdown !J Low power drive requirement r i Ease of paralleling


    OCR Scan     		2N7000 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Performance Relays and Power Contactors KILOVAC — Protective Relays DIN Rail or Screw Mounted Voltage Sensitive Relays Paralleling Relays Current Sensitive Relays ANSI/IEEE C37.90-1978 UL File No. E58048 CSA File No. LR61158 DIN EN50022-35 Frequency Sensitive Relays


    Original     		E58048 LR61158 EN50022-35 WD2759-XXX WD2759 PDF

    transistor marking code 12W SOT-23

    Abstract: No abstract text available
    Text: Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS


    Original     		LND150 LND150 DSFP-LND150 C041114 transistor marking code 12W SOT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds


    Original     		VN4012 DSFP-VN4012 B082013 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds


    Original     		VP0104 DSFP-VP0104 C082313 PDF

    irfbe30

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF644, SiHF644 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling


    Original     		IRFPE30, SiHFPE30 2002/95/EC O-247AC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    RG305

    Abstract: diode 10a 400v
    Text: AOT10B60D 600V, 10A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt


    Original     		AOT10B60D O-220 AOT10B60D 1E-06 1E-05 RG305 diode 10a 400v PDF

    power supply IRF830 APPLICATION

    Abstract: power MOSFET IRF830 irf830 datasheet IRF830
    Text: DC COMPONENTS CO., LTD. IRF830 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 500 Volts RDS on = 1.5 Ohms ID = 4.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements


    Original     		IRF830 O-220AB power supply IRF830 APPLICATION power MOSFET IRF830 irf830 datasheet IRF830 PDF