PART NO W2D 48 Search Results

PART NO W2D 48 Result Highlights (5)

Part	Manufacturer	Description
25LS2518PC	Rochester Electronics LLC	Replacement for AMD part number AM25LS2518PC. Buy from authorized manufacturer Rochester Electronics.
74LS491ANS	Rochester Electronics LLC	Replacement for AMD part number SN74LS491ANS. Buy from authorized manufacturer Rochester Electronics.
9519A-1JC	Rochester Electronics LLC	Replacement for AMD part number AM9519A-1JC. Buy from authorized manufacturer Rochester Electronics.
2147-55/BYA	Rochester Electronics LLC	Replacement for AMD part number AM2147-55/BYA. Buy from authorized manufacturer Rochester Electronics.
25S18FM/B	Rochester Electronics LLC	Replacement for AMD part number AM25S18FMB. Buy from authorized manufacturer Rochester Electronics.

PART NO W2D 48 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
W2D SOT23 Abstract: diode w2d transistor w2d marking CODE W2D marking w2d sot23 w2d MC 68 H 705 part no w2d 48 A114 A115 Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power	Original	PDF	MC74VHC1G126 MC74VHC1G126 353/SC r14525 MC74VHC1G126/D W2D SOT23 diode w2d transistor w2d marking CODE W2D marking w2d sot23 w2d MC 68 H 705 part no w2d 48 A114 A115
W2D SOT23 Abstract: transistor w2d part no w2d 48 sot23 w2d marking w2d marking code 10 sot23 A114 A115 C101 JESD22 Text: MC74VHC1G126 Noninverting 3−State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3−state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power	Original	PDF	MC74VHC1G126 MC74VHC1G126 SC-88A OT-353/SC-70 MC74VHC1G126/D W2D SOT23 transistor w2d part no w2d 48 sot23 w2d marking w2d marking code 10 sot23 A114 A115 C101 JESD22
Untitled Abstract: No abstract text available Text: MC74VHC1G126 Product Preview Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power	Original	PDF	MC74VHC1G126 MC74VHC1G126 r14525 MC74VHC1G126/D
A114 Abstract: A115 C101 JESD22 MC74VHC1G126 diode w2d marking w2d a MC 68 H 705 Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power	Original	PDF	MC74VHC1G126 MC74VHC1G126 353/SC r14525 MC74VHC1G126/D A114 A115 C101 JESD22 diode w2d marking w2d a MC 68 H 705
diode w2d Abstract: marking w2d Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power	Original	PDF	MC74VHC1G126 353/SC r14525 MC74VHC1G126/D diode w2d marking w2d
w2d sot-23 Abstract: No abstract text available Text: MC74VHC1G126 Product Preview Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power	Original	PDF	MC74VHC1G126 r14525 MC74VHC1G126/D w2d sot-23
74VHC1G126 Abstract: VHC1G126 transistor w2d w2d sot-23 diode w2d A114 A115 C101 JESD22 MC74VHC1G126 Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power	Original	PDF	MC74VHC1G126 MC74VHC1G126 353/SC r14525 74VHC1G126 VHC1G126 transistor w2d w2d sot-23 diode w2d A114 A115 C101 JESD22
Axial fans Abstract: No abstract text available Text: 37779-7-8811 • KO-08/07-10,8’ Printed in Germany Axial fans version 07 Axial fans ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen	Original	PDF	KO-08/07-10 D-74673 D-78112 D-84030 Axial fans
marking CODE W2D Abstract: marking w2d Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power	Original	PDF	MC74VHC1G126 353/SC marking CODE W2D marking w2d
w2d 98 Abstract: No abstract text available Text: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit	Original	PDF	AS5SP256K36DQ AS5SP256K36DQ w2d 98
Untitled Abstract: No abstract text available Text: SSRAM AS5SP512K18 A A CE1\ CE2 NC NC BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 81 82 84 83 87 85 86 89 88 91 90 92 93 95 94 96 78 4 77 5 76 NC NC 6 75 7 74 DQb DQb 8	Original	PDF	AS5SP512K18 250mA 290mA 220mA 270mA 185mA 240mA 120mA 200mA
SSRAM Abstract: AS5SP256K36 Text: COTS PEM SSRAM AS5SP256K36 • 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 99 100 80 2 79 3 78 4 77 5 76 DQc DQc 6 75 7 74 DQc DQc 8 73 9 72 VSSQ VDDQ 10 71 11 70 DQc 12 69 DQc NC VDD 13 68 NC VSS DQd 16 65 17 64 18 63 DQd 19 62 VDDQ VSSQ 20 61 21	Original	PDF	AS5SP256K36 220mA 180mA 140mA 120mA 110mA 100mA 35oc/w 275mA 250mA SSRAM AS5SP256K36
SSRAM Abstract: AS5SP128K36 Text: SSRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns ZZ CLK CE1\ I/O Gating and Control CE3\ BWx\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax AS5SP128K36 Rev. 1.6 10/13 BURST CNTL. Address Registers Row Decode	Original	PDF	133Mhz AS5SP128K36 A95mA SSRAM AS5SP128K36
MS-026D Abstract: transistor w2a transistor w2d diode w2d 850C W2D 83 Text: SSRAM AS5SP512K18DQ A A CE1\ CE2 NC NC BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Austin Semiconductor, Inc. Plastic Encapsulated Microcircuit 200Mhz 5.0 3.0 3.0 CONTROL BLOCK GW\ AS5SP512K18DQ Rev. 2.0 09/05 81 82 84 83 85 87 86 89 88 91	Original	PDF	AS5SP512K18DQ -400C AS5SP512K18DQ-30IT AS5SP512K18DQ-35IT AS5SP512K18DQ-40IT 512Kx18, 1050C) MS-026D transistor w2a transistor w2d diode w2d 850C W2D 83

AS5SP512K36DQ Abstract: No abstract text available Text: SSRAM A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A AS5SP512K36DQ Plastic Encapsulated Microcircuit Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns 81 84 82 83 85 87 86 89 88	Original	PDF	AS5SP512K36DQ AS5SP512K36DQ
Untitled Abstract: No abstract text available Text: COTS PEM AS5SP256K36DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 9.0Mb, 256K x 36, Synchronous SRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0	Original	PDF	AS5SP256K36DQ MS026-D/BHA
SSRAM Abstract: AS5SP512K18 Text: SSRAM AS5SP512K18 A A CE1\ CE2 NC NC BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 81 82 84 83 87 85 86 89 88 91 90 92 3 78 4 77 5 76 NC NC 6 75 7 74 DQb DQb 8 73 9 72 VSSQ	Original	PDF	AS5SP512K18 200M2 250mA 290mA 220mA 270mA 185mA 240mA 120mA 200mA SSRAM AS5SP512K18
SSRAM Abstract: AS5SP128K32 Text: SSRAM 81 84 82 83 85 87 86 89 88 91 90 92 93 95 96 94 97 100 1 80 DQc DQc VDDQ VSSQ 2 79 3 78 4 77 5 76 DQc DQc 6 75 7 74 DQc DQc 8 73 9 72 VSSQ VDDQ 10 71 11 70 DQc 12 69 DQc NC 13 68 VDD 15 NC VSS DQd 16 65 17 64 18 63 DQd 19 62 VDDQ VSSQ 20 61 21 60 VSSQ	Original	PDF	AS5SP128K32 SSRAM AS5SP128K32
transistor w2d Abstract: transistor w2a 1050C 850C Text: COTS PEM AS5SP512K36DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ BWx\ GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode Memory Array	Original	PDF	AS5SP512K36DQ MS026-D/BHA transistor w2d transistor w2a 1050C 850C
part no w2d 48 Abstract: No abstract text available Text: SSRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns ZZ CLK CE1\ I/O Gating and Control CE3\ BWx\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax AS5SP128K36 Rev. 1.3 09/11 BURST CNTL. Address Registers Row Decode	Original	PDF	AS5SP128K36 AS5SP128K36 part no w2d 48
transistor w2d Abstract: No abstract text available Text: COTS PEM AS5SP512K18DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode	Original	PDF	AS5SP512K18DQ MS026-D/BHA transistor w2d
AS5SP128K32DQ Abstract: CMOS linear array Text: COTS PEM AS5SP128K32DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 4.0Mb, 128K x 32, Synchronous SRAM Fast Access Times Parameter Cycle Time Clock Access Time	Original	PDF	AS5SP128K32DQ MS026-D/BHA AS5SP128K32DQ CMOS linear array
Untitled Abstract: No abstract text available Text: CO TS PEM COTS SSRAM AS5SP256K36DQ Austin Semiconductor, Inc. 81 84 82 83 87 85 86 89 88 91 92 90 95 93 96 94 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\	Original	PDF	AS5SP256K36DQ AS5SP256K36DQ
AS5SP512K36DQ Abstract: No abstract text available Text: SSRAM AS5SP512K36DQ A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Austin Semiconductor, Inc. Plastic Encapsulated Microcircuit Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns	Original	PDF	AS5SP512K36DQ AS5SP512K36DQ

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PART NO W2D 48 Search Results

PART NO W2D 48 Result Highlights (5)

PART NO W2D 48 Datasheets Context Search

W2D SOT23

W2D SOT23

Untitled

A114

diode w2d

w2d sot-23

74VHC1G126

Axial fans

marking CODE W2D

w2d 98

Untitled

SSRAM

SSRAM

MS-026D

AS5SP512K36DQ

Untitled

SSRAM

SSRAM

transistor w2d

part no w2d 48

transistor w2d

AS5SP128K32DQ

Untitled

AS5SP512K36DQ