BC807
Abstract: BC808 BC807 SOT23 5AZ BC807-16 BC807-40 spice 80T23 8C808 BC807-16 BC807-25 BC807-40
Text: SOT23 PNP SILICON PLANAR MEDIUM I ISSUE 4- JUNE 1996 PARTMARKING BC807 BC807 BC808 POWER TRANSISTORS I DETAILS - 5DZ BC807-16 - 5AZ BC808 5HZ BC808-16 5EZ E c BC807-25 - 5BZ BC808-25 5FZ BC807-40 - 5CZ 8C808-40 5GZ B COMPLEMENTARY TYPES BC807 - BC817 BC808
|
Original
|
BC807
BC808
BC807-16
BC808-16
BC807-25
BC808-25
BC807-40
8C808-40
BC807
BC808
BC807 SOT23
5AZ BC807-16
BC807-40 spice
80T23
8C808
|
PDF
|
bc807
Abstract: BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-25 BC808-40 BC817 BC818
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 JUNE 1996 PARTMARKING DETAILS BC807 5DZ BC807-16 5AZ BC807-25 5BZ BC807-40 5CZ BC807 BC808 BC808 5HZ BC808-16 5EZ BC808-25 5FZ BC808-40 5GZ COMPLEMENTARY TYPES BC807 BC808
|
Original
|
BC807
BC807-16
BC807-25
BC807-40
BC808
BC808-16
BC808-25
BC808-40
bc807
BC807-16
BC807-25
BC807-40
BC808
BC808-16
BC808-25
BC808-40
BC817
BC818
|
PDF
|
all ic data
Abstract: 500ma 40v pnp all ic datasheet MV SOT23 PNP POWER TRANSISTOR SOT23 25 V 500mA TRANSISTOR SOT23 PARTMARKING at BC807 BC80716 BC80725
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC807 ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
|
Original
|
BC807
BC80716
BC80725
BC80740
BC817
-500mA,
-50mA*
-100mA,
all ic data
500ma 40v pnp
all ic datasheet
MV SOT23
PNP POWER TRANSISTOR SOT23
25 V 500mA TRANSISTOR SOT23
PARTMARKING at
BC807
BC80716
BC80725
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PART OBSOLETE - USE BCW68H SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 JUNE 1996 PARTMARKING DETAILS BC807 5DZ BC807-16 5AZ BC807-25 5BZ BC807-40 5CZ BC807 BC808 BC808 5HZ BC808-16 5EZ BC808-25 5FZ BC808-40 5GZ COMPLEMENTARY TYPES
|
Original
|
BCW68H
BC807
BC807-16
BC807-25
BC807-40
BC808
BC808-16
BC808-25
BC808-40
BC807
|
PDF
|
5DZ SOT23
Abstract: BC808 BC80716-5AZ BC807-5DZ
Text: Not Recommended for New Design Please Use BCW68H SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 JUNE 1996 PARTMARKING DETAILS BC807 5DZ BC807-16 5AZ BC807-25 5BZ BC807-40 5CZ BC807 BC808 BC808 5HZ BC808-16 5EZ BC808-25 5FZ
|
Original
|
BC807
BC807-16
BC807-25
BC807-40
BC808
BC808-16
BC808-25
BC808-40
BC807
5DZ SOT23
BC808
BC80716-5AZ
BC807-5DZ
|
PDF
|
transistor MV sot23
Abstract: 16 SOT23
Text: PART OBSOLETE - USE BC807-16 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC807 ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE
|
Original
|
BC807-16
BC80716
BC80725
BC80740
BC807
BC817
-500mA,
-50mA*
BC80716
transistor MV sot23
16 SOT23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use BCW68H SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC807 ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS.
|
Original
|
BCW68H
BC80716
BC80725
BC80740
BC807
BC817
-500mA,
-50mA*
BC80716
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use BC807-16 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC807 ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS.
|
Original
|
BC807-16
BC80716
BC80725
BC80740
BC807
BC817
-500mA,
-50mA*
BC80716
|
PDF
|
FMMD6100
Abstract: FMMD7000 PARTMARKING at 5b DSA003690
Text: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR FMMD6100 FMMD6100 ISSUE 2 - OCTOBER 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C 1.10 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15
|
Original
|
FMMD6100
NY11725
FMMD6100
FMMD7000
PARTMARKING at 5b
DSA003690
|
PDF
|
marking code diode a4l
Abstract: A12L A13L IDT7016 IDT7016L IDT7016S
Text: HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35ns max. – Commercial:12/15/20/25/35ns (max.) Low-power operation
|
Original
|
20/25/35ns
12/15/20/25/35ns
IDT7016S
750mW
IDT7016L
IDT7016
IDT7016S/L
200mV
marking code diode a4l
A12L
A13L
IDT7016L
IDT7016S
|
PDF
|
quad port ram
Abstract: No abstract text available
Text: HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM ◆ Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:12/15/20/25/35ns max. – Industrial: 20ns (max.) – Military: 20/25/35ns (max.)
|
Original
|
12/15/20/25/35ns
20/25/35ns
IDT7016S
750mW
IDT7016L
IDT7016S/L
IDT7016
200mV
quad port ram
|
PDF
|
marking code diode a4l
Abstract: A12L A13L IDT7016 IDT7016L IDT7016S 7016L
Text: HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35ns max. – Commercial:12/15/20/25/35ns (max.) Low-power operation
|
Original
|
20/25/35ns
12/15/20/25/35ns
IDT7016S
750mW
IDT7016L
IDT7016
IDT7016S/L
marking code diode a4l
A12L
A13L
IDT7016L
IDT7016S
7016L
|
PDF
|
part marking ab
Abstract: No abstract text available
Text: IDT7015S/L HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM FEATURES: ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35ns max. – Commercial: 12/15/17/20/25/35ns (max.)
|
Original
|
IDT7015S/L
20/25/35ns
12/15/17/20/25/35ns
IDT7015S
750mW
IDT7015L
IDT7015
b1/99:
200mV
part marking ab
|
PDF
|
A12L
Abstract: IDT7015 IDT7015L IDT7015S MIL-PRF38535 NTE 954
Text: IDT7015S/L HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM FEATURES: ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35ns max. – Commercial: 12/15/17/20/25/35ns (max.)
|
Original
|
IDT7015S/L
20/25/35ns
12/15/17/20/25/35ns
IDT7015S
750mW
IDT7015L
IDT7015
A12L
IDT7015L
IDT7015S
MIL-PRF38535
NTE 954
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 2.5V 16/8K X 9 DUAL-PORT STATIC RAM IDT70T16/5L OBSOLETE PARTS Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:20/25ns max. – Industrial: 25ns (max.)
|
Original
|
16/8K
IDT70T16/5L
20/25ns
200mW
IDT70T16/5
PDN-F-09-01
70T16/5
|
PDF
|
5L25
Abstract: A12L A13L IDT70T15
Text: HIGH-SPEED 2.5V 16/8K X 9 DUAL-PORT STATIC RAM IDT70T16/5L Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:20/25ns max. – Industrial: 25ns (max.) Low-power operation
|
Original
|
16/8K
IDT70T16/5L
20/25ns
200mW
IDT70T16/5
70T16
70T15
5L25
A12L
A13L
IDT70T15
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 2.5V 16/8K X 9 DUAL-PORT STATIC RAM IDT70T16/5L Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:20/25ns max. – Industrial: 25ns (max.) Low-power operation
|
Original
|
16/8K
IDT70T16/5L
20/25ns
IDT70T16/5L
200mW
IDT70T16/5
100mV)
70T16
70T15
|
PDF
|
sanyo OS-CON
Abstract: B806 IT 236 schaffner dc swinging choke 20SV68M 6SA150M n1 sot23 N2 SOT23-6 IRC 0805 sanyo CG
Text: ZXRD1000 SERIES HIGH EFFICIENCY SIMPLESYNC PWM DC-DC CONTROLLERS DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple
|
Original
|
ZXRD1000
dr100
sanyo OS-CON
B806
IT 236 schaffner
dc swinging choke
20SV68M
6SA150M
n1 sot23
N2 SOT23-6
IRC 0805
sanyo CG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BC807 BC808 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 -JUNE 1996_ PARTMARKING DETAILS BC807 -5 D Z BC807-16-5A2 BC807-25 - 5BZ BC807-40 - 5CZ _ « / BC808 - 5HZ BC808-16-5EZ BC808-25-5FZ BC808-40 - 5GZ 3 E
|
OCR Scan
|
BC807
BC808
BC807-16-5A2
BC807-25
BC807-40
BC808-16-5EZ
BC808-25-5FZ
BC808-40
|
PDF
|
fmmd7000
Abstract: FMMD6100
Text: FMMD6100 DIIV Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 0.043 C - 1.10 - D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 K 0.01 L 2.10 N NOM 0.075 0.10 0.0004 0.004 2.50 0.0825 0.0985 NOM 0.95 NOM 0.37
|
OCR Scan
|
FMMD6100
100mA
FMMD7000
FMMD6100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V07S/L Integrated Device Technology, Inc. FEATURES: • True D ual-Ported m em ory cells which allow simulta neous reads of the sa m e m em ory location • High-speed access — Com m ercial: 25 /3 5 /5 5 n s m ax.
|
OCR Scan
|
IDT70V07S/L
80-pin
68-pin
J68-1)
70V07
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. CMOS DUAL-PORT RAM 32K 4K X 8-BIT WITH SEMAPHORE IDT71342SA IDT71342LA FEATURES: DESCRIPTION: • The IDT71342 is an extrem ely high-speed 4 K x8 D u a l-P o rt Static RAM with full on-chip hardware support of semaphore
|
OCR Scan
|
IDT71342SA
IDT71342LA
IDT71342
IDT71342SA/LA
52-pin
J52-1)
64-pin
PN64-1)
|
PDF
|
jsw marking
Abstract: marking code JSW A12L A15R IDT709389 IDT709389L PN100 017-R
Text: PRELIMINARY IDT709389L HIGH-SPEED 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM F e a tu re s * True Dual-Ported m em ory cells w hich allow sim ultaneous access o f the sam e m em ory location High-speed clock to data access - * ♦ - Data input, address, a nd control registers
|
OCR Scan
|
IDT709389L
5/9/12ns
IDT709389L
PN100-1)
1152K
18-Bit)
jsw marking
marking code JSW
A12L
A15R
IDT709389
PN100
017-R
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) Th e ID T 7 082 5 is a high-speed 8K x 16bit Sequential
|
OCR Scan
|
IDT70825S/L
16bit
0G17S12
IL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
|
PDF
|