48 Ohms Resistors CGS
Abstract: PTF102003 600B microstrip resistor PCC103BCT
Text: 375D–03, STYLE 1 Package 20275 120 Watts, 21 10-2170 MHz PUSH/PULL LATERAL MOSFET PTF102003 Description Key Features The PTF102003 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold
|
Original
|
PDF
|
PTF102003
PTF102003
PCS6106TR
PCC103BCT
1/16W
48 Ohms Resistors CGS
600B
microstrip resistor
PCC103BCT
|
RPE113
Abstract: ACD2203
Text: ACD2203 CATV/TV/Video Downconverter with Dual Synthesizer PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • • • • • • • • • • Integrated Downconverter Integrated Dual Synthesizer 256 QAM Compatibility Single +5 V Power Supply Operation Low Power Consumption: <0.6 W
|
Original
|
PDF
|
ACD2203
ACD2203
RPE113
|
LM7805 M SMD
Abstract: LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805 PTF210101M
Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in
|
Original
|
PDF
|
PTF210101M
PTF210101M
10-watt
PG-RFP-10
LM7805 M SMD
LM7805 smd 8 pin
smd transistor marking l7
smd transistor marking C14
LM7805 smd
smd transistor marking l6
transistor smd marking ND
BCP56
LM7805
|
LM7805 smd 8 pin
Abstract: smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 PTF080101M smd transistor marking C14
Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in
|
Original
|
PDF
|
PTF080101M
PTF080101M
10-watt
PG-RFP-10
LM7805 smd 8 pin
smd transistor marking l7
SMD package marking ab l16
LM7805 smd
smd lm7805
transistor smd marking ND
BCP56
LM7805
smd transistor marking C14
|
AT27280
Abstract: variable capacitor ceramic 25pF AT 0340 TEMEX LM7805 05 LM7805 smd 8 pin SMD CAPACITOR L27 smd transistor marking l6 LM7805 PTFA212002E SMD TRANSISTOR MARKING 904
Text: PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz Description The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and
|
Original
|
PDF
|
PTFA212002E
PTFA212002E
200-watt,
AT27280
variable capacitor ceramic 25pF
AT 0340 TEMEX
LM7805 05
LM7805 smd 8 pin
SMD CAPACITOR L27
smd transistor marking l6
LM7805
SMD TRANSISTOR MARKING 904
|
200B
Abstract: BCP56 LM7805 PTFA211001E infineon gold P2KECT-ND
Text: PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from
|
Original
|
PDF
|
PTFA211001E
PTFA211001E
100-watt,
H-30248-2
200B
BCP56
LM7805
infineon gold
P2KECT-ND
|
ssy 1920
Abstract: LM 2931 AT 05 BCP56 LM7805 PTFA191001E PTFA191001F
Text: PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA,
|
Original
|
PDF
|
PTFA191001E
PTFA191001F
PTFA191001E
PTFA191001F
100-watt,
IS-95
CDMA2000
H-36248-2
ssy 1920
LM 2931 AT 05
BCP56
LM7805
|
200B
Abstract: BCP56 LM7805 PTFA210451E infineon gold
Text: PTFA210451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2110 – 2170 MHz Description The PTFA210451E is a thermally-enhanced, 45-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from
|
Original
|
PDF
|
PTFA210451E
PTFA210451E
45-watt,
200B
BCP56
LM7805
infineon gold
|
GRM39COG
Abstract: No abstract text available
Text: ACD2206 CATV/TV/Video Downconverter with Dual Synthesizer Data Sheet - Rev 2.0 FEATURES • • • • • • • • • • Integrated Downconverter Integrated Dual Synthesizer 256 QAM Compatibility Single +5 V Power Supply Operation Low Noise Figure: 8 dB
|
Original
|
PDF
|
ACD2206
ACD2206
GRM39COG
|
LM7805 smd
Abstract: LM7805 smd transistor marking C14
Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency
|
Original
|
PDF
|
PTF180101M
PTF180101M
10-watt
PTF180101M*
TSSOP-10
LM7805 smd
LM7805
smd transistor marking C14
|
Untitled
Abstract: No abstract text available
Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are thermally-enhanced, 60-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
|
Original
|
PDF
|
PTFA210601E
PTFA210601F
60-watt,
H-30265-2
PTFA210601F*
H-31265-2
|
A2103
Abstract: No abstract text available
Text: PTFA210301E PTFA210301F Thermally-Enhanced High Power RF LDMOS FETs 30 W, 2110 – 2170 MHz Description The PTFA210301E and PTFA210301F are thermally-enhanced, 30-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are optimized for single- and two-carrier WCDMA
|
Original
|
PDF
|
PTFA210301E
PTFA210301F
30-watt,
PTFA210301F*
A2103
|
Untitled
Abstract: No abstract text available
Text: PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for CDMA and
|
Original
|
PDF
|
PTFA081501E
PTFA081501F
150-watt,
CDMA2000
PTFA081501F*
IS-95
|
d 417 transistor
Abstract: No abstract text available
Text: PTFA211001E PTFA211001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 2110 – 2170 MHz Description The PTFA211001E and PTFA211001F are thermally-enhanced, 100-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
|
Original
|
PDF
|
PTFA211001E
PTFA211001F
100-watt,
PTFA211001F*
d 417 transistor
|
|
|
A211801E
Abstract: 200B103 LM7805 PTFA211801E
Text: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
|
Original
|
PDF
|
PTFA211801E
PTFA211801F
180-watt,
2140dangerous
A211801E
200B103
LM7805
|
ssy 1920
Abstract: LM7805 SSY C5
Text: PTFA191001E PTFA191001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and
|
Original
|
PDF
|
PTFA191001E
PTFA191001F
100-watt,
IS-95
CDMA2000
PTFA191001F*
ssy 1920
LM7805
SSY C5
|
PTFA043002
Abstract: PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010
Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The
|
Original
|
PDF
|
PTFA043002E
PTFA043002
300-watt,
H-30275-4
PTFA043002E
SCHEMATIC DIAGRAM 3.3kv
type 103 capacitor, 2kv RF, 1300 pf
marking us capacitor pf l1
BCP56
LM7805
300WPEP
P33K
TRANSISTOR 023 3010
|
ACD2203
Abstract: No abstract text available
Text: ACD2203 CATV/TV/Video Downconverter with Dual Synthesizer PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • • • • • • • • • • • Integrated Downconverter Integrated Dual Synthesizer 256 QAM Compatibility Single +5 V Power Supply Operation Low Power Consumption: <0.6 W
|
Original
|
PDF
|
ACD2203
ACD2203
|
rogers
Abstract: No abstract text available
Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
|
Original
|
PDF
|
PTF210451
PTF210451
rogers
|
po111
Abstract: 3773 transistor voltage diagram BCP56 LM7805 PTFA041501GL PTFA041501HL infineon gold
Text: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They
|
Original
|
PDF
|
PTFA041501GL
PTFA041501HL
PTFA041501GL
PTFA041501HL
150-watt
PG-64248-2
IS-95
po111
3773 transistor voltage diagram
BCP56
LM7805
infineon gold
|
diode c723
Abstract: PTFA072401FL VARIABLE RESISTOR 2K LM7805 PTFA072401EL RO4350 BCP56 LM7805 voltage regulator packages DD 127 D TRANSISTOR
Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to
|
Original
|
PDF
|
PTFA072401EL
PTFA072401FL
PTFA072401EL
PTFA072401FL
240-watt
H-33288-2
H-34288-2
diode c723
VARIABLE RESISTOR 2K
LM7805
RO4350
BCP56
LM7805 voltage regulator packages
DD 127 D TRANSISTOR
|
roger
Abstract: H-30260-2 LM7805 ceramic capacitor 103 z 21
Text: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characterized for CDMA and
|
Original
|
PDF
|
PTF041501E
PTF041501F
150watt,
CDMA2000
H-30260-2
H-31260-2
roger
H-30260-2
LM7805
ceramic capacitor 103 z 21
|
RM73Z2A000
Abstract: S9002 smd led 1210 IC vertical panasonic SLMA002 SLMA004 THS6052 PCS6105CT-ND
Text: THS6052 EVM User’s Guide August 2002 High Performance Linear Products SLOU138 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
|
Original
|
PDF
|
THS6052
SLOU138
THS6052
RM73Z2A000
S9002
smd led 1210
IC vertical panasonic
SLMA002
SLMA004
PCS6105CT-ND
|
PTF141501E
Abstract: PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56
Text: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E and PTF141501E are 150-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital
|
Original
|
PDF
|
PTF141501E
PTF141501F
PTF141501E
150-watt,
PTF141501E*
PTF141501A
LM7805 smd
philips smd 1206 resistor
transistor smd marking ND
LM7805
smd lm7805
LM7805 M SMD
SCHEMATIC DIAGRAM 3.3kv
BCP56
|