NVF3055
Abstract: 3055G NVF3055-100 NTF3055-100T1G
Text: NTF3055-100, NVF3055-100 Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 3.0 A, 60 V RDS on = 110 mW
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NTF3055-100,
NVF3055-100
OT-223
AEC-Q101
NVF3055-100
NTF3055-100/D
NVF3055
3055G
NTF3055-100T1G
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D17225
Abstract: Remote Control Toy TRANSMITTER IC IEU-1317
Text: DATA SHEET / MOS INTEGRATED CIRCUIT ¿ÍPD17225,17226,17227,17228 4-BIT SINGLE-CHIP MICROCONTROLLER FOR SMALL GENERAL-PURPOSE INFRARED REMOTE CONTROL TRANSMITTER D E S C R IP T IO N /¿ P D 1 7 2 2 5 ,1 7 2 2 6 ,1 7 2 2 7 ,1 7 2 2 8 h e re a fte r ca lle d /JP D 17225 su b se rie s are 4 -b it s in g le -c h ip m ic ro c o n tro lle rs for
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uPD17225
uPD17226
uPD17227
uPD17228
PD17225
//PD17225,
PD17227,
PD17226
PD17227
D17225
Remote Control Toy TRANSMITTER IC
IEU-1317
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linear MC33269D-5.0
Abstract: 1575 SOP-8 MC33269 MC33269T MC33269ST LM1117 LT1117 MC33269D MC33269DT MC34268
Text: Order this document by MC33269/D MC33269 Low Dropout Positive Fixed and Adjustable Voltage Regulators 800 mA LOW DROPOUT THREE–TERMINAL VOLTAGE REGULATORS The MC33269 series are low dropout, medium current, fixed and adjustable, positive voltage regulators specifically designed for use in low
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MC33269/D
MC33269
MC33269
MC34268
linear MC33269D-5.0
1575 SOP-8
MC33269T
MC33269ST
LM1117
LT1117
MC33269D
MC33269DT
MC34268
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Untitled
Abstract: No abstract text available
Text: XRT7296 '6676ï ,QWHJUDWHG /LQH 7UDQVPLWWHU $SULO APPLICA TIONS FEA TURES - - XOO\ ,QWHJUDWHG 7UDQVPLW ,QWHUIDFH IRU '6676 RU ( ,QWHJUDWHG 3XOVH 6KDSLQJ &LUFXLW &RPSOLDQFH ZLWK &RPSDWLELOLW\ %XOOHWLQ &RPSOLDQFH ZLWK &&,77 5HFRPPHQGDWLRQV
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XRT7296
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2955E
Abstract: AN569 MMFT2955E MMFT2955ET1 MMFT2955ET3
Text: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.
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MMFT2955E
r14525
MMFT2955E/D
2955E
AN569
MMFT2955E
MMFT2955ET1
MMFT2955ET3
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37525
Abstract: marking 37525 MC33375
Text: Order this document by MC33375/D MC33375 Advance Information Low Dropout 300 mA Voltage Regulator with ON/OFF Control The MC33375 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT–223,
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MC33375/D
MC33375
MC33375
37525
marking 37525
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317mg
Abstract: 317mbg 317ABG LM317M LM317MABTG LM317MBTG 317m 1N4002 317mt 317ABG t
Text: LM317M 500 mA Adjustable Output, Positive Voltage Regulator The LM317M is an adjustable three−terminal positive voltage regulator capable of supplying in excess of 500 mA over an output voltage range of 1.2 V to 37 V. This voltage regulator is exceptionally
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LM317M
LM317M
LM317M/D
317mg
317mbg
317ABG
LM317MABTG
LM317MBTG
317m
1N4002
317mt
317ABG t
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motorola transistor dpak marking
Abstract: 1N10 2N3904 AN569 MMFT1N10E MMFT1N10ET1 MMFT1N10ET3 SMD310
Text: MOTOROLA Order this document by MMFT1N10E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT1N10E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET
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MMFT1N10E/D
MMFT1N10E
MMFT1N10E/D*
motorola transistor dpak marking
1N10
2N3904
AN569
MMFT1N10E
MMFT1N10ET1
MMFT1N10ET3
SMD310
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418E
Abstract: CS5201 CS5201-3 IN4002 LT1086
Text: CS5201-3 1.0 A, 3.3 V Fixed Linear Regulator The CS5201–3 linear regulator provides 1.0 A @ 3.3 V reference at 1.0 A with an output voltage accuracy of ±1.5 %. This regulator is intended for use as a post regulator and microprocessor supply. The fast loop response and low dropout
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CS5201-3
CS5201
LT1086
r14525
418E
CS5201-3
IN4002
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DWDA
Abstract: LXP600A LXT300Z LXT301Z transformers 2507
Text: '$7$ 6+ 7 $35,/ ìääç 5HYLVLRQ íïí /;7êíí=î/;7êíì= $GYDQFHG 7ìî(ì 6KRUWð+DXO 7UDQVFHLYHUV *HQHUDO 'HVFULSWLRQ HDWXUHV 7KH /;7êíí= DQG /;7êíì= DUH IXOO\ LQWHJUDWHG WUDQVð FHLYHUV IRU ERWK 1RUWK $PHULFDQ ìïèéé 0ESV õ7ìô DQG
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TD62305
Abstract: No abstract text available
Text: SILICON MONOLITHIC TD62304AFN TD62305AFN BIPO LAR DIGITAL INTEGRATED CIRCUIT 7ch LOW INPUT ACTIVE DARLINGTON SINK DRIVER The TD62304AFN and TD62305AFN are non-inverting transistor arrays, which are comprised of seven NPN darlington output stages PNP input stages.
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TD62304AFN
TD62305AFN
TD62305AFN
2305A
TD62305
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onsemi SOT-223
Abstract: MMFT2406T1 MMFT2406T3 SMD310 T2406
Text: MMFT2406T1 Preferred Device Power MOSFET 700 mA, 240 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT–223
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MMFT2406T1
r14525
MMFT2406T1/D
onsemi SOT-223
MMFT2406T1
MMFT2406T3
SMD310
T2406
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Untitled
Abstract: No abstract text available
Text: NSS40301MZ4, NSV40301MZ4T1G Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed
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NSS40301MZ4,
NSV40301MZ4T1G
NSS40301MZ4/D
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4030p
Abstract: NJT4030P NJT4030PT1G NJT4030PT3G
Text: NJT4030P Preferred Device Bipolar Power Transistors PNP Silicon Features • Collector −Emitter Sustaining Voltage − • • • • • • http://onsemi.com VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − = 200 (Min) @ IC = 1.0 Adc hFE
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NJT4030P
OT-223
OT-223
4030PG
4030Plaws
NJT4030P/D
4030p
NJT4030P
NJT4030PT1G
NJT4030PT3G
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diagram of ic ta7736p
Abstract: floppy motor driver TC9142P TA77 0-12V motor 12v TA7736P TA7736P/F
Text: TA7736P/F DC MOTOR DRIVER IC. The TA7736P is a 3-phase Bi-directional motor driver IC. It designed for use VCR, tape deck, floppy disk and record player motor drivers. It contains output power drivers, position sensing circuits, control amplifier and CW/CCW control
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TA7736P/F
TA7736P
TC9203F
TA7736F
diagram of ic ta7736p
floppy motor driver
TC9142P
TA77
0-12V
motor 12v
TA7736P/F
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Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 800 Unbuffered DIMM 0.72” 1GB With 128Mx8 CL6 JM800QLU-1G Description Placement The JM800QLU-1G is a 128M x 64bits DDR2-800 Unbuffered DIMM. The JM800QLU-1G consists of 8 pcs 128Mx8bits DDR2 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit
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240PIN
128Mx8
JM800QLU-1G
JM800QLU-1G
64bits
DDR2-800
128Mx8bits
240-pin
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Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 667 Unbuffered DIMM 0.72” TS128MLQ64V6U 1024MB With 128Mx8 CL5 Description Placement The TS128MLQ64V6U is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6U consists of 8 pcs 128Mx8bits DDR2 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit
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240PIN
TS128MLQ64V6U
1024MB
128Mx8
TS128MLQ64V6U
64bits
DDR2-667
128Mx8bits
240-pin
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Untitled
Abstract: No abstract text available
Text: NSS1C200MZ4 100 V, 2.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS1C200MZ4
NSS1C200MZ4/D
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transistor bd 370
Abstract: No abstract text available
Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS
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NSB9435T1
r14525
NSB9435T1/D
transistor bd 370
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2955g
Abstract: NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G
Text: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant
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NTF2955,
NVF2955,
NVF2955P
OT-223
NTF2955/D
2955g
NVF2955T1G
nvf2955
A1 SOT-223 MOSFET
NVF2955PT1G
NTF2955T1G
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SBCP68
Abstract: SBCP68T1G bcp68t1g
Text: BCP68T1G, SBCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.
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BCP68T1G,
SBCP68T1G
OT-223
BCP69T1
AEC-Q101
BCP68T1/D
SBCP68
bcp68t1g
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Untitled
Abstract: No abstract text available
Text: NSS1C201MZ4 100 V, 2.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS1C201MZ4
NSS1C201MZ4/D
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TRANSISTOR AH-16
Abstract: SBCP53 sbcp53-10 AH MARKING SOT223 Transistor AH10 BCP53-16T1G sot 223 marking code AH 16T1G bcp53 SOT-223
Text: BCP53 Series, SBCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.
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BCP53
SBCP53
OT-223
BCP56
BCP53T1
BCP53-10T1
AH-10
BCP53-16T1
AH-16
TRANSISTOR AH-16
sbcp53-10
AH MARKING SOT223
Transistor AH10
BCP53-16T1G
sot 223 marking code AH
16T1G
bcp53 SOT-223
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zt751
Abstract: No abstract text available
Text: PZT751T1G, SPZT751T1G PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.
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PZT751T1G,
SPZT751T1G
OT-223
PZT651T1
AEC-Q101
PZT751T1/D
zt751
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