PD032P96
Abstract: No abstract text available
Text: epitex PHOTO-DIODE Opto-Device & Custom LED PD032P96 Hermetical sealing type Photodiode PD032P96 is a PIN-photodiode featuring excellent responsibility and high photocurrent. This PIN-photodiode consists of a large chip with 2.8 mm*2.8mm active area mounted on the TO-39 stem and
|
Original
|
PDF
|
PD032P96
PD032P96
1000LX
|
PD032P00
Abstract: No abstract text available
Text: epitex PHOTO-DIODE Opto-Device & Custom LED PD032P00 stem type Photodiode PD032P00 is a PIN-photodiode featuring excellent responsibility and high photocurrent. This PIN-photodiode consists of a large chip with 2.8mm*2.8mm active area mounted on the TO-39 stem and
|
Original
|
PDF
|
PD032P00
PD032P00
65degree.
1000LX
|
Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PD032-01 PIN-PHOTODIODE PD032-01 mold type PIN-Photodiode PD032-01 is a PIN-photodiode featuring excellent responsibility of 50ns and high photocurrent. This PIN-photodiode consists of a large chip with 2.8mm*2.8mm active area
|
Original
|
PDF
|
PD032-01
PD032-01
1000Lx
|
Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PIN-PHOTODIODE PD032-01 Lead Pb Free Product RoHS compliant PD032-01 mold type PIN-Photodiode PD032-01 is a PIN-photodiode featuring excellent responsibility of 50ns and high photocurrent. This PIN-photodiode consists of a large chip with 2.8mm*2.8mm active area
|
Original
|
PDF
|
PD032-01
PD032-01
1000Lx
|
PD032P00
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PHOTO-DIODE PD03P00 Lead Pb Free Product – RoHS Compliant PD032P00 stem type photo-diode PD032P00 is a PIN-photodiode featuring excellent responsibility and high photocurrent. This PIN-photodiode consists of a large chip with 2.8mmx2.8mm active area mounted
|
Original
|
PDF
|
PD03P00
PD032P00
PD032P00
1000Lx
|
PD032P96
Abstract: No abstract text available
Text: epitex PHOTO-DIODE Opto-Device & Custom LED PD032P96 Lead Pb Free Product – RoHS Compliant PD032P96 hermetical sealing type photo-diode PD032P96 is a PIN-photodiode featuring excellent responsibility and high photocurrent. This PIN-photodiode consists of a large chip with 2.8x2.8mm active area mounted
|
Original
|
PDF
|
PD032P96
PD032P96
50degrees.
1000Lx
|
Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PD032P00 PHOTO-DIODE PD03P00 stem type photo-diode PD032P00 is a PIN-photodiode featuring excellent responsibility and high photocurrent. This PIN-photodiode consists of a large chip with 2.8mmx2.8mm active area mounted on the TO-39 stem and is sealed with epoxy resin.
|
Original
|
PDF
|
PD032P00
PD03P00
PD032P00
1000Lx
|
Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PD032P96 PHOTO-DIODE PD032P96 hermetical sealing type photo-diode PD032P96 is a PIN-photodiode featuring excellent responsibility and high photocurrent. This PIN-photodiode consists of a large chip with 2.8 x 2.8mm active area mounted
|
Original
|
PDF
|
PD032P96
PD032P96
50degrees
1000Lx
|
AM28F020
Abstract: No abstract text available
Text: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current
|
Original
|
PDF
|
Am28F020
32-pin
|
AM28F020
Abstract: 32 pin EPROM 2 megabit flash memory am28f020-150
Text: AMENDMENT Am28F020 Data Sheet 1996 Flash Products Data Book/Handbook INTRODUCTION This amendment supersedes information regarding the Am28F020 device in the 1996 Flash Products Data Book/Handbook, PID 11796D. This document includes replacement pages for the Am28F020 data sheet,
|
Original
|
PDF
|
Am28F020
11796D.
14727E.
IN3064
14727E-17
14727E-18
32 pin EPROM
2 megabit flash memory
am28f020-150
|
AM28F256
Abstract: A1H Transistor AM28F256-150PC
Text: FINAL Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current
|
Original
|
PDF
|
Am28F256
32-Pin
A1H Transistor
AM28F256-150PC
|
AM28F256A
Abstract: Am29Fxxx
Text: FINAL Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current ■ Embedded Erase Electrical Bulk Chip-Erase
|
Original
|
PDF
|
Am28F256A
32-Pin
Am29Fxxx
|
SAYFP1G95
Abstract: SOW-28 DA79 PD022 PL028 16-038-PQT-2 DW74 CD022 DA79 H EM130
Text: Physical Dimensions BSC is an ANSI standard for Basic Centering. Dimensions are measured in inches. PD022 1.090 1.120 .390 .425 12 22 .340 .390 Pin 1 I.D. .009 .015 .430 .500 11 .045 .065 0° 10° .005 MIN .140 .200 SEATING PLANE .120 .160 .090 .110 .014 .022
|
Original
|
PDF
|
PD022
16-038-S
PD024
16-038-SB-AG
CD028
CD022
16-000038H-3
CD3022
SAYFP1G95
SOW-28
DA79
PD022
PL028
16-038-PQT-2
DW74
CD022
DA79 H
EM130
|
Untitled
Abstract: No abstract text available
Text: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current
|
OCR Scan
|
PDF
|
Am28F020A
32-pin
|
|
|
Untitled
Abstract: No abstract text available
Text: ADV MICRO M E M O R Y 4ÔE D 025752Ö GüBDS^e 1 • a T—46—13-25 Am 27X010 1 Megabit (131,072 x 8-Bit) CMOS ExpressROM Device AMD4 Advanced Micro Devices DISTINCTIVE CHARACTERISTICS ■ ■ ■ As an OTP EPROM alternative: - Factory optimized programming
|
OCR Scan
|
PDF
|
27X010
100mA
KS000010
0205-005A
Am27X010
|
Untitled
Abstract: No abstract text available
Text: “H Y U N D A I HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 120 ns access time • Compatible with JEDEC-Standard Commands
|
OCR Scan
|
PDF
|
HY29F040
120ns
P-121,
T-121,
R-121
P-12E,
T-12E,
R-12E
P-151,
|
Untitled
Abstract: No abstract text available
Text: AMD£I Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — A ccess tim es as fast as 70 ns ■ CMOS low power consumption — 30 mA m axim um active current
|
OCR Scan
|
PDF
|
Am28F020A
32-pin
|
Untitled
Abstract: No abstract text available
Text: FINAL A M D ii Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current
|
OCR Scan
|
PDF
|
Am28F512A
32-Pin
|
Untitled
Abstract: No abstract text available
Text: FINAL A M D ii Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance
|
OCR Scan
|
PDF
|
Am28F010A
32-pin
|
Untitled
Abstract: No abstract text available
Text: FINAL A M D ii Am 28F512 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access tim e
|
OCR Scan
|
PDF
|
28F512
32-Pin
16-038-S
PL032â
Am28F512
16-038FPO-5
TS032â
16-038-TSOP-2
|
Untitled
Abstract: No abstract text available
Text: FINAL AMD£I Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V High performance — Access tim es as fast as 70 ns * — 5 seconds typical chip erase, including
|
OCR Scan
|
PDF
|
Am28F010A
32-pin
16-038-TSOP-2
TSR032â
TSR032
|
Untitled
Abstract: No abstract text available
Text: FINAL AMDH Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — A ccess tim es as fast as 70 ns ■ CMOS low power consumption — 30 mA m axim um active current
|
OCR Scan
|
PDF
|
Am28F256A
32-Pin
100speed
|
Untitled
Abstract: No abstract text available
Text: FINAL A M D ii Am28F020A 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance
|
OCR Scan
|
PDF
|
Am28F020A
32-pin
|
Untitled
Abstract: No abstract text available
Text: FINAL AM D ii Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip Erase High performance — Access times as fast as 70 ns
|
OCR Scan
|
PDF
|
Am28F020
32-pin
|
