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    PD23C1000EA Search Results

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    Untitled

    Abstract: No abstract text available
    Text: //PD 23C 10OOE A 131,072 x 8-B IT MASK-PROGRAMMABLE c m o s ro m N E C Electronics Inc. Pin Configuration Description T h e /L/PD23C1000EA is a 131,0 72-w ord by 8-b it static RO M fabricated with C M O S silicon-gate technology. Designed to operate from a single + 5 -v o lt power


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    10OOE uPD23C1000EA 072-word 600-m 32-pin 04134A PDF

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


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    KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464 PDF

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


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    416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256 PDF

    UPD23C1000E

    Abstract: UPD23C1000
    Text: SEC PD23C1000EA 131,072 x 8-Bit Mask-Programmable CMOS ROM NEC Electronics Inc. Description Pin Configuration The jiPD23Cl000EA is a 131,072-word by 8-bit static ROM fabricated with CMOS silicon-gate technology. Designed to operate from a single + 5-volt power supply,


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    uPD23C1000EA jiPD23Cl000EA 072-word 600-mil, 32-pin 32-Pln PD23C1000EA UPD23C1000E UPD23C1000 PDF

    UPD23C100

    Abstract: No abstract text available
    Text: PD23C1000EA 131,072 X 8-Bit Mask-Programmable CMOS ROM NEC Electronics Inc. Description Pin Configuration The /PD23C1000EA is a 131,072-word by 8-bit static ROM fabricated with CMOS silicon-gate technology. Designed to operate from a single + 5-volt power supply,


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    uPD23C1000EA /iPD23C1000EA 072-word 600-mil, 32-pin 1PD23C1000EA UPD23C100 PDF