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Rochester Electronics LLC UPD44165182BF5-E40-EQ3 QDR SRAM, 1MX18, 0.45NS
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DigiKey	UPD44165182BF5-E40-EQ3	Bulk			7	1 - 10 $43.23 100 $43.23 1000 $43.23 10000 $43.23	Buy Now
Rochester Electronics LLC UPD44165184BF5-E33-EQ3 QDR SRAM, 1MX18, 0.45NS
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DigiKey	UPD44165184BF5-E33-EQ3	Bulk			8	1 - 10 $40.27 100 $40.27 1000 $40.27 10000 $40.27	Buy Now
Rochester Electronics LLC UPD44165182BF5-E33-EQ3 QDR SRAM, 1MX18, 0.45NS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UPD44165182BF5-E33-EQ3	Bulk			8	1 - 10 $40.27 100 $40.27 1000 $40.27 10000 $40.27	Buy Now
Rochester Electronics LLC UPD44164184BF5-E40-EQ3 DDR SRAM, 1MX18, 0.45NS
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DigiKey	UPD44164184BF5-E40-EQ3	Bulk			8	1 - 10 $40.27 100 $40.27 1000 $40.27 10000 $40.27	Buy Now
Rochester Electronics LLC UPD44165084BF5-E40-EQ3 QDR SRAM, 2MX8, 0.45NS
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DigiKey	UPD44165084BF5-E40-EQ3	Bulk			8	1 - 10 $40.27 100 $40.27 1000 $40.27 10000 $40.27	Buy Now

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PD441 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
81-096 Abstract: No abstract text available Text: PD441 VISHAY Vishay Semiconductors PD441 Package Dimensions in mm 14437 Document Number 81096 Rev. 1.1, 24-Feb-04 www.vishay.com 1 PD441 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to	Original	PD441 24-Feb-04 D-74025 81-096	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the µPD44164365 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS	Original	PD44164085, 18M-BIT PD44164085 152-word PD44164185 576-word 18-bit PD44164365 288-word 36-bit	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the µPD44164365 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS	Original	PD44164085, 18M-BIT PD44164085 152-word PD44164185 576-word 18-bit PD44164365 288-word 36-bit	PDF
PD23C64020 Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L Text: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed	Original	X13769XJ2V0CD00 A10BL 8K/64 256M5 PD45256441 54-pin PC133 PC100 MC-22000 PD23C64020 PD45D128442 4M84 PD45D128842 0443 IC PD23C64000AL 45V16A PD264 A80L	PDF
CN17-3 Abstract: UL110-0520 ltc014 cn137 S29JL064H70TFI000H PMC71 CCC30 TC58FVM7B5BTG65 CN233 MT48LC16M16A2TG Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	A19354JJ1V1UM00 A19354JJ1V1UM LAN9115 PFESiP/V850EP1 INTPZ15 CP2102-GM CN165V CN125V CN173 CN17-3 UL110-0520 ltc014 cn137 S29JL064H70TFI000H PMC71 CCC30 TC58FVM7B5BTG65 CN233 MT48LC16M16A2TG	PDF
smd code A9 3 pin transistor Abstract: smd TRANSISTOR code b6 g10 smd transistor "SMD Code" b14 smd diode ecg manual ic SMD D8B smd transistor g11 smd transistor m6 smd transistor G9 Text: High Speed Converter Evaluation Platform HSC-ADC-EVALC FEATURES PRODUCT HIGHLIGHTS Xilinx Virtex-4 FPGA-based buffer memory board Used for capturing digital data from high speed ADC evaluation boards to simplify evaluation 64 kB FIFO depth Parallel input at 644 MSPS SDR and 800 MSPS DDR	Original	ADP3339AKCZ-3 SKHHAKA010 CBSB-14-01 DPS050300U-P5P-TK ADR512ART ERJ-2GEJ622X ERJ-2GE0R00X ERJ-2GEJ133X ERJ-2GEJ102X ECJ-0EB0J224K smd code A9 3 pin transistor smd TRANSISTOR code b6 g10 smd transistor "SMD Code" b14 smd diode ecg manual ic SMD D8B smd transistor g11 smd transistor m6 smd transistor G9	PDF
free transistor equivalent book 2sc Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002	PDF
PU4312 Abstract: PU4424 PU4215 PU4216 PU4219 PU4220 PU4310 PU4313 PU4314 PU4319 Text: - 322 - m m. Ta=25‘C , *EPIiTc= 25'C M PU4215 PU4216 PU4219 PU4220 PU4310 PÜ4311 PU4312 PU4313 PU4314 PU4S16 PU4319 PU4320 PU4325 PU4410 PTTA^I 1 PU4412 PD4413 PU4414 PU4416 PU4417 PU4418 PÜ4419 PU4420 PU4421 PU4422 PU4423 PU4424 PÜ4510 PU4511 PU4512	OCR Scan	PU4215 PU4216 PU4219 PU4220 PU4310 PU4312 SIL-10) PU4422 PU4423 PU4424 PU4313 PU4314 PU4319	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¡jP D 4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The ,PD4416001 is a high speed, low power, 16,777,216 bits 16,777,216 words by 1 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V (A version) or 2.5 V ± 0.125 V (C version).	OCR Scan	16M-BIT 16M-WORD uPD4416001 PD4416001 54-pin PD4416001G 5-A12-9JF 5-A15-9JF PD4416001G5-C12-9JF	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¡j P D 4 4 1 6 0 0 8 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT Description The ,PD4416008 is a high speed, low power, 16,777,216 bits 2,097,152 words by 8 bits CMOS static RAM.	OCR Scan	16M-BIT uPD4416008 PD4416008 54-pin PD4416008G5-A12-9 PD4416008G5-A15-9 PD4416008G5-C12-9J PD4416008G5-C15-9J S54G5-80-9JF-1	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¡j P D 4 4 1 6 0 1 6 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT Description The ,PD4416016 is a high speed, low power, 16,777,216 bits 1,048,576 words by 16 bits CMOS static RAM.	OCR Scan	16M-BIT 16-BIT uPD4416016 PD4416016 54-pin PD4416016G5-A12-9 PD4416016G5-A15-9 S54G5-80-9JF-1 14081EJ2V0D	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ PD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,PD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM.	OCR Scan	iuPD441000L-X 128K-WORD uPD441000L-X PD441000L-X 32-pin 36-pin	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _¡jP D 4 4 1 6 0 0 4 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT Description The ,PD4416004 is a high speed, low power, 16,777,216 bits 4,194,304 words by 4 bits CMOS static RAM.	OCR Scan	16M-BIT uPD4416004 PD4416004 54-pin PD4416004G5-A12-9 PD4416004G5-A15-9 PD4416004G5-C12-9J PD4416004G5-C15-9J S54G5-80-9JF-1	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _/j P D 4 4 1 0 0 0 L - X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,PD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOSstatic RAM.	OCR Scan	128K-WORD uPD441000L-X 32-pin 36-pin	PDF

PD-441B Abstract: No abstract text available Text: INTERNATIONAL RECTIFIER HE D 4ÖSS4SE Data Sheet No. PD-441B T-39-15 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS _ Ç q l U - C H A N I M E L P O W E R M O S F E T s T O - 2 4 7 A C P A C K A G E I“R IRFP1 50 IRFP1 51 IRFP1 52	OCR Scan	PD-441B T-39-15 O-247AC C-481 IRFP150, IRFP151, IRFP152, IRFP153 C-482 PD-441B	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ PD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,PD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM.	OCR Scan	iuPD441000L-X 128K-WORD uPD441000L-X PD441000L-X 32-pin 36-pin	PDF