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    PD57060 Search Results

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    PD57060 Price and Stock

    STMicroelectronics PD57060S-E

    RF MOSFET LDMOS 28V POWERSO-10RF
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    DigiKey PD57060S-E Tube 370 1
    • 1 $62.72
    • 10 $51.832
    • 100 $46.1255
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    Avnet Americas PD57060S-E Bag 23 Weeks 400
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    • 1000 $41.09434
    • 10000 $39.51586
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    Mouser Electronics PD57060S-E
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    Newark PD57060S-E Bulk 1
    • 1 $44.81
    • 10 $43.57
    • 100 $37.08
    • 1000 $35.85
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    STMicroelectronics PD57060S-E 1
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    STMicroelectronics PD57060-E

    RF MOSFET LDMOS 28V POWERSO10
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PD57060-E Tube 1
    • 1 $62.72
    • 10 $51.832
    • 100 $46.1255
    • 1000 $46.1255
    • 10000 $46.1255
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    Avnet Americas PD57060-E Bulk 1
    • 1 $54.44
    • 10 $51.15
    • 100 $49.5
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    PD57060-E Bag 23 Weeks 400
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    • 1000 $44.29545
    • 10000 $42.2435
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    Mouser Electronics PD57060-E 155
    • 1 $53.87
    • 10 $52.18
    • 100 $46.81
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    Newark PD57060-E Bulk 70 1
    • 1 $54.44
    • 10 $51.15
    • 100 $45.87
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    STMicroelectronics PD57060-E 155 1
    • 1 $52.79
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    • 100 $45.87
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    TME PD57060-E 1
    • 1 $59.58
    • 10 $47.28
    • 100 $44.13
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    Avnet Silica PD57060-E 17 Weeks 50
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    EBV Elektronik PD57060-E 24 Weeks 50
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    STMicroelectronics PD57060TR-E

    RF MOSFET LDMOS 28V POWERSO10
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    DigiKey PD57060TR-E Reel 600
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    Avnet Americas PD57060TR-E Reel 23 Weeks 600
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    Mouser Electronics PD57060TR-E
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    Avnet Silica PD57060TR-E 17 Weeks 600
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    STMicroelectronics PD57060STR-E

    RF MOSFET LDMOS 28V POWERSO-10RF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PD57060STR-E Reel 600
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    • 1000 $43.78883
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    PD57060 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PD57060 STMicroelectronics RF Power Transistor Original PDF
    PD57060-E STMicroelectronics RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Original PDF
    PD57060S STMicroelectronics RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY Original PDF
    PD57060S STMicroelectronics RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY Original PDF
    PD57060S STMicroelectronics RF Power Transistor Original PDF
    PD57060S-E STMicroelectronics RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Original PDF
    PD57060STR-E STMicroelectronics RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Original PDF
    PD57060TR-E STMicroelectronics RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Original PDF

    PD57060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PD57060s

    Abstract: 945 TRANSISTOR PD57060
    Text: PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION


    Original     		PDF PD57060S PD57060S PowerSO-10RF. 945 TRANSISTOR PD57060

    Untitled

    Abstract: No abstract text available
    Text: PD57060-E PD57060S-E RF Power Transistors The LdmoST Plastic FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 60W WITH 14.3 dB GAIN @ 945MHz 28V ■ NEW RF PLASTIC PACKAGE ■ IN COMPLIANCE WITH THE 2002/93/EC


    Original     		PDF PD57060-E PD57060S-E 945MHz 2002/93/EC PowerSO-10RF PowerSO-10RF.

    capacitor 100pf

    Abstract: No abstract text available
    Text: DB-900-100W RF POWER AMPLIFIER using 2 x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over 869-894 MHz • 10:1 LOAD VSWR CAPABILITY


    Original     		PDF DB-900-100W PD57060S DB-900-100W IS-54/-136 IS-95 capacitor 100pf

    PD57002-E

    Abstract: PD57018-E PD57060-E JESD97 STEVAL-TDR007V1 1030 mhz STEVAL-TDR00
    Text: STEVAL-TDR007V1 3 stages RF power amplifier demonstration board using: PD57002-E, PD57018-E, 2 x PD57060-E Features • N-channel enhancement-mode lateral MOSFETs ■ Excellent thermal stability ■ Frequency: 1030 MHz ■ Supply voltage: 36 V ■ Peak power: 200 W typical


    Original     		PDF STEVAL-TDR007V1 PD57002-E, PD57018-E, PD57060-E STEVAL-TDR007V1 PD57002-E PD57018-E AB-2x57060-1030 PD57002-E PD57018-E PD57060-E JESD97 1030 mhz STEVAL-TDR00

    PD57018-E

    Abstract: PD57060-E JESD97 PD57002-E STEVAL-TDR007V1 STEVAL-TDR00 AB-2x57060-1030
    Text: STEVAL-TDR007V1 3 stages RF power amplifier demonstration board using: PD57002-E, PD57018-E, 2 x PD57060-E Features • N-channel enhancement-mode lateral MOSFETs ■ Excellent thermal stability ■ Frequency: 1030 MHz ■ Supply voltage: 36 V ■ Peak power: 200 W typical


    Original     		PDF STEVAL-TDR007V1 PD57002-E, PD57018-E, PD57060-E STEVAL-TDR007V1 PD57002-E PD57018-E AB-2x57060-1030 PD57018-E PD57060-E JESD97 PD57002-E STEVAL-TDR00

    DB-960-90W

    Abstract: PD57060S
    Text: DB-960-90W RF POWER AMPLIFIER using 2 x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 90 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY


    Original     		PDF DB-960-90W PD57060S DB-960-90W PD57060S

    smd zener diode code 20w

    Abstract: DB-900-100W ceramic capacitor 100nF 50 63v rf amplifier 100w capacitor 100nf 63v PD57060s zener 20w smd diode 1w ATC100B capacitor smd gp 542
    Text: DB-900-100W 100W / 26V / 869-894 MHz PA using 2x PD57060S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over


    Original     		PDF DB-900-100W PD57060S IS-95 DB-900-100W IS-54/-136 IS-95 smd zener diode code 20w ceramic capacitor 100nF 50 63v rf amplifier 100w capacitor 100nf 63v PD57060s zener 20w smd diode 1w ATC100B capacitor smd gp 542

    smd transistor 2x

    Abstract: 6 pin TRANSISTOR SMD CODE PA smd zener diode code DE TRANSISTOR SMD 2X zener diode 5v ATC100B capacitor c12 90 HYBRID 70 mhz smd p2 10K anaren 1304
    Text: DB-960-90W 90W / 26V / 925-960 MHz PA using 2x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 90 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY


    Original     		PDF DB-960-90W PD57060S DB-960-90W smd transistor 2x 6 pin TRANSISTOR SMD CODE PA smd zener diode code DE TRANSISTOR SMD 2X zener diode 5v ATC100B capacitor c12 90 HYBRID 70 mhz smd p2 10K anaren 1304

    smd zener diode code 20w

    Abstract: rf power amplifier 100w zener 20w smd diode 1w capacitor 100nf 63v PD57060s rf amplifier 100w smd code ND ATC100B DB-900-100W XPD57060S
    Text: DB-900-100W RF POWER AMPLIFIER using 2 x PD57060S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over


    Original     		PDF DB-900-100W PD57060S IS-95 DB-900-100W IS-54/-136 IS-95 smd zener diode code 20w rf power amplifier 100w zener 20w smd diode 1w capacitor 100nf 63v PD57060s rf amplifier 100w smd code ND ATC100B XPD57060S

    zener 20w

    Abstract: DB-57060S-526 EXCELDRC35C 3214W-1-103E A02TJ B10TJ GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 PD57060S
    Text: DB-57060S-526 RF POWER amplifier using 1 x PD57060S N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 486 - 526MHz ■ Supply voltage: 26V ■ Output power: 20W ■ Operation: class AB ■ IMD3 2 tones test : < -36 dBc @ 20W avg


    Original     		PDF DB-57060S-526 PD57060S 526MHz DB-57060S-526 zener 20w EXCELDRC35C 3214W-1-103E A02TJ B10TJ GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 PD57060S

    STEVAL-TDR007V1

    Abstract: PD57018 PD57002-E PD57018-E PD57060-E
    Text: STEVAL-TDR007V1 3 stage RF power amplifier demonstration board using: PD57002-E, PD57018-E, 2 x PD57060-E Features • N-channel enhancement-mode lateral MOSFETs ■ Excellent thermal stability ■ Frequency: 1030 MHz ■ Supply voltage: 36 V ■ Peak power: 200 W typical


    Original     		PDF STEVAL-TDR007V1 PD57002-E, PD57018-E, PD57060-E STEVAL-TDR007V1 PD57002-E PD57018-E PD57018 PD57002-E PD57018-E PD57060-E

    Untitled

    Abstract: No abstract text available
    Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead


    Original     		PDF PD57060 PD57060S PD57060S PowerSO-10RF.

    CAPACITOR 33PF

    Abstract: zener 20w 3214W-1-103E A02TJ B10TJ DB-57060S-526 EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50
    Text: DB-57060S-526 RF POWER amplifier using 1 x PD57060S N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 486 - 526MHz ■ Supply voltage: 26V ■ Output power: 20W ■ Operation: class AB ■ IMD3 2 tones test : < -36 dBc @ 20W avg


    Original     		PDF DB-57060S-526 PD57060S 526MHz DB-57060S-526 CAPACITOR 33PF zener 20w 3214W-1-103E A02TJ B10TJ EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50

    PD57060s

    Abstract: 700B AN1294 PD57060 atc 174
    Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57060 PD57060S PowerSO-10RF PD57060S PowerSO-10RF. 700B AN1294 PD57060 atc 174

    PD57060s

    Abstract: PD57060S-E 700B AN1294 PD57060 PD57060-E PD57060STR-E PD57060TR-E PowerSO-10RF marking
    Text: PD57060-E PD57060S-E RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 14.3dB gain @ 945MHz / 28V ■ New RF plastic package


    Original     		PDF PD57060-E PD57060S-E 945MHz PowerSO-10RF PD57060-E PowerSO10RF. PD570and PD57060s PD57060S-E 700B AN1294 PD57060 PD57060STR-E PD57060TR-E PowerSO-10RF marking

    smd transistor 647

    Abstract: smd transistor 2x smd zener diode code 20w TRANSISTOR SMD 2X SMD Transistor 30w TRANSISTOR SMD 2x 6 R222.900.100W
    Text: DB-900-100W 100W / 26V / 869-894 MHz PA using 2x PD57060S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over


    Original     		PDF DB-900-100W PD57060S IS-95 DB-900-100W IS-54/-136 smd transistor 647 smd transistor 2x smd zener diode code 20w TRANSISTOR SMD 2X SMD Transistor 30w TRANSISTOR SMD 2x 6 R222.900.100W

    PD57060s

    Abstract: 700B AN1294 PD57060
    Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57060 PD57060S PowerSO-10RF PD57060S PowerSO-10RF. 700B AN1294 PD57060

    PD57060s

    Abstract: 700B AN1294 PD57060 925MHz
    Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead


    Original     		PDF PD57060 PD57060S PowerSO-10RF PD57060S PowerSO-10RF. PD57060 700B AN1294 925MHz

    Untitled

    Abstract: No abstract text available
    Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead


    Original     		PDF PD57060 PD57060S PD57060S PowerSO-10RF.

    Untitled

    Abstract: No abstract text available
    Text: PD57060-E PD57060S-E RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 14.3dB gain @ 945MHz / 28V ■ New RF plastic package


    Original     		PDF PD57060-E PD57060S-E 945MHz PowerSO-10RF PowerSO10RF.

    Untitled

    Abstract: No abstract text available
    Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead


    Original     		PDF PD57060 PD57060S PD57060S PowerSO-10RF.

    capacitor 220 uf

    Abstract: No abstract text available
    Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead


    Original     		PDF PD57060 PD57060S PD57060S PowerSO-10RF. capacitor 220 uf

    SMD 1206 RESISTOR 100 OHMS

    Abstract: SMD Transistor 30w smd zener diode code DE p2 10K capacitor c12 zener diode 5v W950 ATC100B DB-960-90W XPD57060S
    Text: DB-960-90W RF POWER AMPLIFIER using 2 x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 90 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY


    Original     		PDF DB-960-90W PD57060S DB-960-90W SMD 1206 RESISTOR 100 OHMS SMD Transistor 30w smd zener diode code DE p2 10K capacitor c12 zener diode 5v W950 ATC100B XPD57060S

    Untitled

    Abstract: No abstract text available
    Text: DB-960-90W 90W / 26V / 925-960 MHz PA using 2x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 90 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY


    Original     		PDF DB-960-90W PD57060S DB-960-90W