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    Rochester Electronics LLC PDTA143XMB,315

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    Nexperia PDTA143XMB,315

    TRANS PREBIAS PNP 50V 0.1A 3DFN
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    Rochester Electronics PDTA143XMB,315 19,986 1
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    NXP Semiconductors PDTA143XMB,315

    Trans Digital BJT PNP 50V 100mA 250mW 3-Pin DFN-B T/R Automotive AEC-Q101
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    Verical PDTA143XMB,315 180,000 13,762
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    PDTA143XMB Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PDTA143XMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 4.7 kOhm, R2 = 10 kOhm Original PDF
    PDTA143XMB315 NXP Semiconductors NOW NEXPERIA PDTA143XMB - SMALL Original PDF
    PDTA143XMB,315 NXP Semiconductors PDTA143XMB - PDTA143XMB - PNP resistor-equipped transistor; R1 = 4.7 kOhm, R2 = 10 kOhm Original PDF

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    PDTC143XMB

    Abstract: PDTA143 PDTA143X
    Text: 83B PDTA143XMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 k , R2 = 10 k Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA143XMB OT883B PDTC143XMB. AEC-Q101 PDTC143XMB PDTA143 PDTA143X

    PDTC143XMB

    Abstract: No abstract text available
    Text: 83B PDTA143XMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA143XMB OT883B PDTC143XMB. AEC-Q101 PDTC143XMB

    PDTC143XMB

    Abstract: No abstract text available
    Text: 83B PDTC143XMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Rev. 1 — 7 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC143XMB OT883B PDTA143XMB. AEC-Q101 PDTC143XMB

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    PDTC143XMB

    Abstract: No abstract text available
    Text: 83B PDTC143XMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 k , R2 = 10 k Rev. 1 — 7 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC143XMB OT883B PDTA143XMB. AEC-Q101 PDTC143XMB