PIN Photodiode
Abstract: S3590-19 Si PIN PHOTODIODE S3590-08
Text: Si PIN photodiode S3590-08/-09/-18/-19 Large active area Si PIN photodiode Features Applications Sensitivity matching with BGO and CsI TI scintillators: S3590-08/-09 Scintillation detectors Sensitivity matching with blue scintillator (LSO, GSO, etc.): S3590-18/-19
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S3590-08/-09/-18/-19
S3590-08/-09
S3590-18/-19
S3590-09/-19
S3590-09
S3590-19
S3590-08
S3590-09
S3590-18
S3590-19
PIN Photodiode
Si PIN PHOTODIODE
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Untitled
Abstract: No abstract text available
Text: Si PIN photodiode S3204/S3584 series Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance
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S3204/S3584
S3204-08
S3204-09
S3584-08
S3584-09
SE-171
KPIN1051E10
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near IR photodiodes
Abstract: S8745-01 S8558
Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5
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KSPD0001E09
near IR photodiodes
S8745-01
S8558
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l943
Abstract: No abstract text available
Text: SOLID STATE D I V I S I O N Selection Guide Feb. 2012 LED Wide variations of Light Emitting Diodes to match various applications LIGHT EMITTING DIODES LED HAMAMATSU offers a broad lineup of light emitters such as high-power, near infrared LED. HAMAMATSU LEDs
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KLED0002E06
l943
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C9750
Abstract: C10990 S11059-78HT S11154-01CT S10604
Text: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS
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C10988MA
C10627
D-82211
DE128228814
C9750
C10990
S11059-78HT
S11154-01CT
S10604
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S2044
Abstract: U13-U11 tl071 datasheet AD538 S1880 TL071 TL071 sensor uv light PHOTO detector analog divider
Text: PSD Two-dimensional PSD S1880, S2044 Non-discrete position sensor utilizing photodiode surface resistance PSD Position Sensitive Detector is an optoelectronic position sensor utilizing photodiode surface resistance. Unlike discrete element detectors such as CCD, PSD provides continuous position data and features high position resolution and high-speed response.
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S1880,
S2044
SE-171
KPSD1015E06
S2044
U13-U11
tl071 datasheet
AD538
S1880
TL071
TL071 sensor
uv light PHOTO detector
analog divider
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S2044
Abstract: No abstract text available
Text: PSD Two-dimensional PSD S1880, S2044 Non-discrete position sensor utilizing photodiode surface resistance PSD Position Sensitive Detector is an optoelectronic position sensor utilizing photodiode surface resistance. Unlike discrete element detectors such as CCD, PSD provides continuous position data and features high position resolution and high-speed response.
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S1880,
S2044
SE-171
KPSD1015E05
S2044
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sensor BPW34 application note
Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,
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VMN-MS6520-1012
sensor BPW34 application note
touch sensitive siren using transistor
tsop sensor
Infrared sensor TSOP 1738
vo2223
vo3120
infrared signal transmission distance sensor
BPW34 application note
APPLICATION NOTE BpW34
BP104 application note
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BPW 64 photo
Abstract: PHOTOVOLTAIC CELL Fotodiode BPW24 "PHOTOVOLTAIC CELL" BPW 64 photo diode BPW 64 photovoltaic A1183 Din 5033
Text: Silizium-Foto-PIN-Diode Silicon Photo PIN Diode Anwendung: Ultra-schneller Foto-Detektor Application: Ultra high speed photo-detector Besondere Merkmale: Features: • Kurze Ansprechzeiten bei kleinen Spannungen • Fast response times at low operating voltages
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5033/IEC
BPW 64 photo
PHOTOVOLTAIC CELL
Fotodiode
BPW24
"PHOTOVOLTAIC CELL"
BPW 64 photo diode
BPW 64
photovoltaic
A1183
Din 5033
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors Reflective Sensors – Analog Tr a n s m i s s i v e S e n s o r s – A n a l o g
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VCNL4020X01
VCNL3020
AEC-Q101
VCNL4010
VCNL4020
VMN-SG2123-1502
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Photodiodes
Abstract: yag Electrical circuit S11499 TO-8 Package
Text: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has
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S11499
S11499-01)
SE-171
KPIN1082E01
Photodiodes
yag Electrical circuit
TO-8 Package
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - Emitters, Detectors, Optical Sensors Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors
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VCNL4010
VCNL4020
VCNL3020
VMN-SG2123-1404
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TSUS3400
Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS INFRARED EMITTERS, PHOTO DETECTORS, AND OPTICAL SENSORS SELECTOR GUIDE w w w. v i s h a y. c o m INFRARED EMITTERS, PHOTO DETECTORS, AND OPTICAL SENSORS Vishay Semiconductors Infrared Emitters
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VMN-SG2123-1010
TSUS3400
VCNL4000
VISHAY VSLB3940 DATASHEET
smartphone proximity sensor
TEMT6200FX01
BPW41N
infrared emitters and detectors
TCND5000
TCRT1010
TEMD6010FX01
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TRANSISTOR DNH
Abstract: PS5022 PS1191RA PP1101W PS1101RA PS1101WA PS1102HA PS1192FA PS1192HA peak spectral response 900 nm photo detector
Text: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number
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30MIN.
15MIN.
17MIN.
14MIN.
TRANSISTOR DNH
PS5022
PS1191RA
PP1101W
PS1101RA
PS1101WA
PS1102HA
PS1192FA
PS1192HA
peak spectral response 900 nm photo detector
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FND-100Q
Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.
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CAT0506P
FND-100Q
FND-100
C30724E
YAG-444-4A
InGaAs APD quadrant
PerkinElmer fnd-100q
Si apd photodiode
nir emitter leds with 700 to 900 nm
SPCM-AQR
C30950E
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Untitled
Abstract: No abstract text available
Text: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has
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S11499
S11499-01)
SE-171
KPIN1082E01
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Untitled
Abstract: No abstract text available
Text: I R-enhanced Si PI N photodiodes S11499 series Large area, enhanced near I R sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has
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SE-171
KPIN1082E01
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A New Detector for IR LED Light
Abstract: Silicon Detector OSD5-5T GaAlAs detector IR photodiode 880 nm 850 nm LED RG830 Longwave laser ingaas LED IR photodiode 95w
Text: A NEW DETECTOR FOR IRLED LIGHT As reprinted from SENSORS Magazine, December 1996 Issue A New Detector for IR LED Light A new GaAIAs processing technique has led to a wavelength-specific detector for 880 nm light that requires no signal modulation or optical filtering to eliminate
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DIODE PP602
Abstract: pp602 PP701 pp601 40 PP601 PP1101W PS1101RA PS1101WA PS1102HA PS1191RA
Text: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number
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L9657
Abstract: S10604
Text: 2007 Vol.2 E x h i b i t i o n s NEWS 2007 Vol.2 NEWS Belgium / Denmark / France / Germany / Italy / Netherlands / North Europe & CIS / November Vision 2007 Stuttgart / Germany UKAEA (Oxford / UK) Productronica 2007 (Munich / Germany) 35th Scottish Microscopy Symposium
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SE-17141
52/1A
RU-113054
L9657
S10604
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Optical Detector
Abstract: EG*G Heimann Optoelectronics GmbH EG*G Optoelectronics Heimann electron Detector 42 1E-18 CHV30P C1300 transistor c900 C900
Text: Lighting Imaging Telecom Sensors Channel Photomultipliers Channel Photomultipliers Overview and Specifications . P H O T O M U L T I P L I E R C P M C H A N N E L Description PerkinElmer Optoelectronics, formerly EG&G Optoelectronics, is pleased to introduce the Channel
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DS-291
Optical Detector
EG*G Heimann Optoelectronics GmbH
EG*G Optoelectronics
Heimann
electron Detector 42
1E-18
CHV30P
C1300
transistor c900
C900
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Untitled
Abstract: No abstract text available
Text: Si PIN photodiodes S10783 S10784 High-speed detectors with plastic package The S10783 and S10784 are high-speed APC auto power control detectors developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. The S10783 is designed for surface mount and the S10784 is a plastic package with φ3 mm lens.
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S10784
S10783
S10784
S10783:
S10784:
S10784phone:
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Light Detector laser
Abstract: short distance measurement ir infrared diode
Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that
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KOTH0001E15
Light Detector laser
short distance measurement ir infrared diode
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S10784
Abstract: No abstract text available
Text: Si PIN photodiodes S10783 S10784 High-speed detectors with plastic package The S10783 and S10784 are high-speed APC auto power control detectors developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. The S10783 is designed for surface mount and the S10784 is a plastic package with φ3 mm lens.
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S10784
S10783
S10784
S10783:
S10784:
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