8712 RESISTOR
Abstract: NES1823M-180
Text: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 180 W of output power CW with high linear gain, high
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NES1823M-180
NES1823M-180
IMT2000
8712 RESISTOR
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SW SPDT 6pin
Abstract: HS350 VP215 marking G3J
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2015TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2015TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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PG2015TB
PG2015TB
SW SPDT 6pin
HS350
VP215
marking G3J
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marking G3J
Abstract: PG2015TB
Text: GaAs INTEGRATED CIRCUIT PG2015TB L, S-BAND SPDT SWITCH DESCRIPTION The PG2015TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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PG2015TB
PG2015TB
PG10356EJ02V0DS
marking G3J
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SW SPDT 6pin
Abstract: HS350 VP215
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NES1823M-180-A
Abstract: No abstract text available
Text: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 180 W of output power CW with high
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NES1823M-180
NES1823M-180
IMT2000
NES1823M-180-A
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SW SPDT 6pin
Abstract: HS350 VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG168TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG168TB is GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
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PG168TB
PG168TB
SW SPDT 6pin
HS350
VP215
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SW SPDT 6pin
Abstract: HS350 VP215
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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HS350
Abstract: VP215
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PG2015TB
IR260
VP215
WS260
HS350
PG10356JJ02V0DS
HS350
VP215
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HS350
Abstract: VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG168TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG168TB is GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
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Original
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PG168TB
PG168TB
90NEC
HS350
VP215
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HS350
Abstract: VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2015TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2015TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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PG2015TB
PG2015TB
HS350
VP215
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API Electronics
Abstract: PG1024 DD0007 PG1018 PG1019 PG1020 PG1021 PG1022 PG1023 PG1035
Text: A P I .».3 * 0077 / E L E C T R O N I C S I NC ri m T| D 0 4 3 S c12 0 D 0 D 0 7 ? S ; I* INTERIM BULLETIN S ubject to Revision W ithout Notice -Ju ly 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN TYPE PG1018 thru PG1035, 2 A M P NPN SILICO N PLANAR POWER TRANSISTORS
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OCR Scan
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13A0077I
D043ST5
DD0007?
PG1018
PG1035,
PG1019
PG1020
PG1021
PG1022
API Electronics
PG1024
DD0007
PG1023
PG1035
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PG1018
Abstract: PG1019 PG1020 PG1021 PG1022 PG1030 PG1031 PG1035 PGI023 Pirgo Electronics
Text: A P I EL ECT RO NIC S INC ' 13 1 DE | 0 0 4 B S CJS 0 D 0 0 0 7 ? S | ~ 3 *°9 7 7J - 7 ? 3 3 - 0 'f T ' - INTERIM BULLETIN S u b je c t to R e visio n W ithout Notice -July 15/ 1971 V POWER TRANSISTOR ENGINEERING BULLETIN n _ _ zo -o — I— oo TYPE PG1018 thru PG1035, 2 A M P NPN
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OCR Scan
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PG1018
PG1035,
PG1019
PG1020
PG1021
PG1022
PG1024
PG1025
PG1026
PG1030
PG1031
PG1035
PGI023
Pirgo Electronics
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PG2020
Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6
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OCR Scan
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2N4862
PG1001
PG1002
PG1003
PG1004
PG1005
PG1006
PG1007
PG1008
PG1009
PG2020
PG2011
TO46
PG1083
PG2102
2N4863
PG1050
PG1051
PG1010
PG1053
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