F31Z
Abstract: SPF-3143Z SPF3143Z SPF-3143 pHEMT FET marking A spf3143
Text: SPF-3143Z SPF-3143Z Low Noise pHEMT GaAs FET LOW NOISE pHEMT GaAs FET NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-343 Product Description Features SiGe BiCMOS Si BiCMOS SiGe HBT 9 GaAs pHEMT Si CMOS Si BJT GaN HEMT 0.58dB NFMIN at 2GHz
|
Original
|
SPF-3143Z
OT-343
31dBm
SPF-3143Z
DS091103
F31Z
SPF3143Z
SPF-3143
pHEMT FET marking A
spf3143
|
PDF
|
MMIC SOT 343 marking CODE
Abstract: MGA-52543-BLKG MGA-52543-TR1G class d amplifier circuit A004R MGA-52543 MGA-52543-TR2G a1 lna SOT343 lna mmic amplifier marking code 425
Text: Products > RF ICs/Discretes > RF ICs > GaAs Amplifiers, Mixers, Switches > MGA-52543 MGA-52543 5V LNA, 32dBm OIP3, 0.4-6GHz, SOT343 SC-70 Description Lifecycle status: Active Features The MGA-52543 is an easy-to-use 5V high linearity low noise amplifier built on Avago's
|
Original
|
MGA-52543
32dBm
OT343
SC-70)
MGA-52543
V/53mA
32dBm,
17dBm
MMIC SOT 343 marking CODE
MGA-52543-BLKG
MGA-52543-TR1G
class d amplifier circuit
A004R
MGA-52543-TR2G
a1 lna
SOT343 lna
mmic amplifier marking code 425
|
PDF
|
zo 607 MA
Abstract: 4948 CFH400 pHEMT FET marking A
Text: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
|
Original
|
OT343
400um
OT343:
OT343
zo 607 MA
4948
CFH400
pHEMT FET marking A
|
PDF
|
01248
Abstract: No abstract text available
Text: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
|
Original
|
|
PDF
|
sot43
Abstract: No abstract text available
Text: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
|
Original
|
|
PDF
|
ZO 607 MA
Abstract: 4948 ta 6203 CFH400 Q62702-G0116
Text: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
|
Original
|
OT343
400um
OT343:
OT343
ZO 607 MA
4948
ta 6203
CFH400
Q62702-G0116
|
PDF
|
P3F filtronic
Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B
Text: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency
|
Original
|
FPD10000AF
FPD10000AF
FPD10000AF)
P3F filtronic
pHEMT FET marking A
MIL-HDBK-263
PHEMT marking code a
PHEMT marking code B
|
PDF
|
PHEMT marking code a
Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website
|
Original
|
FPD4000AF
FPD4000AF
PHEMT marking code a
FET P2F
pHEMT FET marking l
transistor code p2f
pHEMT FET marking A
|
PDF
|
transistor SMD P2F
Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website
|
Original
|
FPD4000AF
FPD4000AF
ATC600S330JW250
T491B105M035AS7015
RCI-0603-10R1J
PC-SP-000022-002
AMP-103185-2
transistor SMD P2F
PHEMT marking code a
pHEMT transistor 360
transistor STD P2F
smd p2f transistor
MIL-HDBK-263
transistor P2F
ATC600S1R0
FET MARKING CODE
|
PDF
|
transistor SMD P2F
Abstract: smd p2f transistor atc600s FPD4000AF PHEMT marking code a smd marking code j6 smd p2f pHEMT FET marking A transistor STD P2F smd code marking C8
Text: FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website
|
Original
|
FPD4000AF
FPD4000AF
ATC600S330JW250
T491B105M035AS7015
RCI-0603-10R1J
PC-SP-000022-002
AMP-103185-2
transistor SMD P2F
smd p2f transistor
atc600s
PHEMT marking code a
smd marking code j6
smd p2f
pHEMT FET marking A
transistor STD P2F
smd code marking C8
|
PDF
|
transistor SMD P2F
Abstract: atc600s smd p2f transistor smd marking code j6 PHEMT marking code a atc600 smd p2f FPD4000AF MIL-HDBK-263 Filtronic Components
Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website
|
Original
|
FPD4000AF
FPD4000AF
ATC600S330JW250
T491B105M035AS7015
RCI-0603-10R1J
PC-SP-000022-002
AMP-103185-2
transistor SMD P2F
atc600s
smd p2f transistor
smd marking code j6
PHEMT marking code a
atc600
smd p2f
MIL-HDBK-263
Filtronic Components
|
PDF
|
AS211-334
Abstract: No abstract text available
Text: DATA SHEET AS211-334: PHEMT GaAs IC SPDT Switch LF–4 GHz Applications ● Pin Out Top View General-purpose switch for telecommunication applications J3 1 6 2 5 3 4 V2 CBL Features P1 dB 30 dBm typical @ 3 V IP3 43 dBm typical @ 3 V ● Low insertion loss (0.3 dB @ 0.9 GHz)
|
Original
|
AS211-334:
J-STD-020
AS211-334
|
PDF
|
microstripline FR4
Abstract: ATF331M4 ATF-331M4 ATF-36163 LL1608-FH15NK LL1608-FH3N3S LL1608-FH5N6S 5988-5905EN ATF-33
Text: A Low Noise High Intercept Point Amplifier for 1850 to 1910 MHz PCS Applications using the ATF-331M4 Depletion Mode PHEMT Application Note 1288 Introduction The small size and leadless feature offers the designer the ability to reduce circuit board layout size significantly. The top and bottom views of the M4 package are
|
Original
|
ATF-331M4
5988-5905EN
microstripline FR4
ATF331M4
ATF-36163
LL1608-FH15NK
LL1608-FH3N3S
LL1608-FH5N6S
ATF-33
|
PDF
|
Motorola transistor smd marking codes
Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.
|
Original
|
|
PDF
|
|
|
S277
Abstract: QFN-20 SKY13277-355LF Marking s277 GND214
Text: DATA SHEET SKY13277-355LF: GaAs SP3T Absorptive Switch 500 MHz–2.5 GHz Features Functional Diagram Positive voltage control 0/3 V typ. ● High isolation 62 dB at 1 GHz ● Integrated silicon CMOS driver ● Isolated ports are absorptive ● Available lead (Pb)-free and RoHS-compliant MSL-1 @ 260°C
|
Original
|
SKY13277-355LF:
J-STD-020
SKY13277-355LF
20-lead
S277
QFN-20
Marking s277
GND214
|
PDF
|
gaas fet marking
Abstract: No abstract text available
Text: In fineon •i c h r t l o g ifci CMH192 GaAs MMIC Target Data Sheet • High-Linearity, PCS LNA/Mixer 1C for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process • Leadless 3.5 x 3.5 mm. SMT package • LO - Input power range: - 7.0 to 0 dBm
|
OCR Scan
|
CMH192
Q62705-K0608
P-VQFN-20
gaas fet marking
|
PDF
|
srf 3417
Abstract: transistor srf 3417 SKY77329 transistor tt 2170 em digrf SKY77519 MARKING CODE EA1 SKY77408 sky72302-21 sky77506
Text: Product Selection Guide Spring 2007 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog and mixed signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and direct conversion radios are at the heart of many of today’s leading-edge
|
Original
|
BRO254-07B
srf 3417
transistor srf 3417
SKY77329
transistor tt 2170 em
digrf
SKY77519
MARKING CODE EA1
SKY77408
sky72302-21
sky77506
|
PDF
|
47146
Abstract: 41146
Text: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
|
Original
|
CFH800
OT343
47146
41146
|
PDF
|
transmitter microwave
Abstract: marking 1GL marking code IAM transistor MARKING IAM A004R IAM-92516 IAM-92516-BLK IAM-92516-TR1 IAM-92516-TR2 MO229
Text: Agilent IAM-92516 High Linearity GaAs FET Mixer Data Sheet Features DC = 5V @ 26 mA Typ. RF = 1.91 GHz, PinRF = -10 dBm; LO = 1.7 GHz, PinLO = -3 dBm; IF = 210 MHz unlesss otherwise specified • Lead-free Option Available Description Agilent Technologies’s IAM-92516
|
Original
|
IAM-92516
IAM-92516
5989-0975EN
transmitter microwave
marking 1GL
marking code IAM
transistor MARKING IAM
A004R
IAM-92516-BLK
IAM-92516-TR1
IAM-92516-TR2
MO229
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Agilent IAM-92516 High Linearity GaAs FET Mixer Data Sheet Features DC = 5V @ 26 mA Typ. RF = 1.91 GHz, PinRF = -10 dBm; LO = 1.7 GHz, PinLO = -3 dBm; IF = 210 MHz unlesss otherwise specified • High Linearity: 27 dBm IIP3 Description Agilent Technologies’s IAM-92516
|
Original
|
IAM-92516
IAM-92516
5989-0975EN
|
PDF
|
M3X marking
Abstract: No abstract text available
Text: IAM-92516 High Linearity GaAs FET Mixer Data Sheet Description Features Avago Technologies’s IAM-92516 is a high linearity GaAs FET Mixer using 0.5 m enhancement mode pHEMT technology. This device houses in Pb-free and Halogen free 16 pins LPCC 3x3[2] plastic package. The IAM-92516
|
Original
|
IAM-92516
IAM-92516
5989-0975EN
AV02-3622EN
M3X marking
|
PDF
|
MRF high power transistor
Abstract: transmitter microwave electronic transformer halogen mmds down converter "Up/Down Converter" amplifier marking code a FET GAAS marking a PHEMT marking code a gaas fet marking a gaas Low Noise Amplifier
Text: IAM-92516 High Linearity GaAs FET Mixer Data Sheet Description Avago Technologies’s IAM-92516 is a high linearity GaAs FET Mixer using 0.5 µm enhancement mode pHEMT technology. This device houses in Pb-free and Halogen free 16 pins LPCC 3x3[2] plastic package. The IAM-92516 has
|
Original
|
IAM-92516
IAM-92516
5989-0975EN
MRF high power transistor
transmitter microwave
electronic transformer halogen
mmds down converter
"Up/Down Converter"
amplifier marking code a
FET GAAS marking a
PHEMT marking code a
gaas fet marking a
gaas Low Noise Amplifier
|
PDF
|
47146
Abstract: No abstract text available
Text: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
|
Original
|
CFH800
OT343
47146
|
PDF
|
47146
Abstract: SOT43 402 5921
Text: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
|
Original
|
CFH800
47146
SOT43
402 5921
|
PDF
|
