2108 npn transistor
Abstract: Dual General Purpose Transistors SC70-6 "Dual npn Transistor" philips 23 BP317 SC70-6 dual NPN Transistor 77 ic marking code sc70
Text: DISCRETE SEMICONDUCTORS DATA SHEET PUMX1 Dual NPN transistor Preliminary specification File under Discrete Semiconductors, SC04 1995 Dec 07 Philips Semiconductors Preliminary specification Dual NPN transistor PUMX1 FEATURES APPLICATIONS DESCRIPTION • Two transistors in one SC70
|
Original
|
SC70-6
base218,
SCD47
113062/1100/01/pp8
2108 npn transistor
Dual General Purpose Transistors SC70-6
"Dual npn Transistor"
philips 23
BP317
SC70-6
dual NPN Transistor
77 ic marking code sc70
|
PDF
|
BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
|
Original
|
DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
|
PDF
|
B.A date sheet karachi
Abstract: BF547W marking code e2 m1b marking BF547 SCD31
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors June 1994 Philips Semiconductors Product specification NPN 1 GHz wideband transistor
|
Original
|
BF547W
OT323
BF547W
BF547.
MBC870
SCD31
123065/1500/02/pp12
B.A date sheet karachi
marking code e2
m1b marking
BF547
SCD31
|
PDF
|
MLC850
Abstract: 2322 157 philips B.A date sheet karachi RF NPN POWER TRANSISTOR 2.5 GHZ BFG11 MLC852 2222 031 capacitor philips 2222 424
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification
|
Original
|
BFG11;
BFG11/X
OT143
BFG11
SCD38
123055/1500/03/pp12
MLC850
2322 157 philips
B.A date sheet karachi
RF NPN POWER TRANSISTOR 2.5 GHZ
BFG11
MLC852
2222 031 capacitor philips 2222 424
|
PDF
|
BFG590W
Abstract: 3094 npn
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG590W BFG590W/X; BFG590W/XR NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors August 1995 Philips Semiconductors Product specification BFG590W BFG590W/X; BFG590W/XR
|
Original
|
BFG590W
BFG590W/X;
BFG590W/XR
BFG590W/X
SCD35
BFG590W
3094 npn
|
PDF
|
ua 722 fc
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG25AW BFG25AW/X; BFG25AW/XR NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors August 1995 Philips Semiconductors Product specification BFG25AW BFG25AW/X; BFG25AW/XR
|
Original
|
BFG25AW
BFG25AW/X;
BFG25AW/XR
OT343
OT343R
BFG25AW/X
ua 722 fc
|
PDF
|
BF 212 transistor
Abstract: BFG67W
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors September 1994 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR
|
Original
|
BFG67W
BFG67W/X;
BFG67W/XR
BFG67W/X
SCD34
BF 212 transistor
BFG67W
|
PDF
|
P10T
Abstract: BFQ236 BFQ236A BFQ256 BFQ256A
Text: Philips S em iconductors bb53*ì31 DD31723 bflG M A P V NPN 1 GHz video transistors BFQ236; BFQ236A N FEATURES Product specification AUER P H IL IP S /D IS C R E T E b^E PINNING • High breakdown voltages • Low output capacitance PIN 1 • High gain bandwidth product
|
OCR Scan
|
DD31723
BFQ236;
BFQ236A
BFQ256
BFQ256A
OT223
OT223.
MSB002
0Q317H4
P10T
BFQ236
BFQ236A
BFQ256A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bRE D • bbS3R31 002fl37b 724 « A P X Philips specification Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic
|
OCR Scan
|
bbS3R31
002fl37b
BU2520D
bbS3T31
|
PDF
|
IC 651
Abstract: BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651
Text: 5bE D PHILIPS INTERNATIONAL Philips Components B D S 643/645/647/649/651 Data sheet status Product specification date o f issue April 1991 m 7110ÛEb DQ4314b 17T • PHIN r-33-z^j NPN Silicon Darlington power transistors DESCRIPTION PINNING -SOT223 DESCRIPTION
|
OCR Scan
|
DD4314b
BDS643/645/647/649/651
r-33-z
OT223,
BDS644/646/648/650/652.
-SOT223
BDS643
BDS645
BDS647
BDS649
IC 651
BDS645
BD8643
BDS647
Darlington NPN Silicon Diode
BDS643
BDS649
BDS651
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general
|
OCR Scan
|
BDS643/645/647/649/651
-SOT223
OT223,
BDS644/646/648/650/652.
bbS3T31
0034bt
bbS3T31
0034bl0
DQ34bll
|
PDF
|
IC 651
Abstract: BDS643 BDS645 BDS647 BDS649 BDS651
Text: Philips Com ponents BDS643/645/647/649/651 Data sheet status Product specification date o f issue AprS 1991 NPN silicon Daiiington power transistors PINNING -SO T223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 NPN epitaxial base transistors in a
|
OCR Scan
|
BDS643/645/647/649/651
OT223,
BDS644/646/648/650/652.
-SOT223
BDS643
BDS645
BDS647
BDS649
BDS651
IC 651
|
PDF
|
BDS61A
Abstract: smd npn darlington BDS61 BDS61B Darlington NPN Silicon Diode BDS61C smd diode LC 61 SMD 547 DIODE
Text: Philip» Comportants Datasheet status Product specification data of issue Apr* 1991 BDS 6 1 /6 1 A /6 1 B /6 1 C NPN Silicon Darlington power transistors DESCRIPTIO N PINNING - SOT223 DESCRIPTIO N base collector emitter collector PIN 1 2 3 4 NPN Silicon power transistors in a
|
OCR Scan
|
BDS61
OT223)
BDS60/60A/60B/60C.
OT223
BDS61A
BDS61B
BDS61C
smd npn darlington
Darlington NPN Silicon Diode
smd diode LC 61
SMD 547 DIODE
|
PDF
|
ha 431 transistor
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.
|
OCR Scan
|
BU2727AX
ha 431 transistor
|
PDF
|
|
|
BUX86
Abstract: UG77A bux87 TO126 BUX87 philips bux86 philips bux87
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUX86; BUX87 High-voltage, high-speed, glass-passivated npn power transistors in T O -126 envelopes, fo r use in con verters, inverters, switching regulators, m otor co n tro l systems and switching applications.
|
OCR Scan
|
BUX86;
BUX87
O-126
BUX86
O-126.
711Gfl2t.
UG77A
bux87 TO126
BUX87
philips bux86
philips bux87
|
PDF
|
transistor w 431
Abstract: No abstract text available
Text: T Philips Components RZ2731B32W Data sheet status Product specification data of Issue June 1992 NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL SbE D • 711Dfi2b OOHbSbb 3b3 I IPHIN DESCRIPTION AP P LIC A T IO N FEATU R ES • Interdigitated structure; high
|
OCR Scan
|
RZ2731B32W
711Dfi2b
FO-57D
711005b
00MbS71
transistor w 431
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2730AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
|
OCR Scan
|
BU2730AL
|
PDF
|
STT 433
Abstract: variable capacitor erie ceramic RX1214B170W Tekelec
Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium
|
OCR Scan
|
RX1214B170W
FO-91B.
71106Eb
STT 433
variable capacitor
erie ceramic
RX1214B170W
Tekelec
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P h ilip s S em icon ducto rs P relim inary sp e cifica tio n S ilicon ep itaxial-b ase tran sistors QUICK REFERENCE DATA MIN. CONOTTIONS BD433 PINNING - TO-126 SOT32 DESCRIPTION PARAMETER collector-emitter voltage Veto MAX. UNIT SYMBOL Yces if n DESCRIPTION
|
OCR Scan
|
BD433
BD437
BD439
BD441
BD435
O-126
BD434,
BD436,
BD438,
|
PDF
|
BFG591
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEA TUR ES D ES C R IPTIO N • High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin S O T 223 package. • Low noise figure • High transition frequency
|
OCR Scan
|
BFG591
voltage929
7110A2b
BFG591
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Pjjijip^enijconductor^^^ • bbS3T31 0031233 T1S ■ APX^ProductspecificatiOT NPN 6 GHz wideband transistor ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in
|
OCR Scan
|
bbS3T31
BFG91A
|
PDF
|
transistor tt 2222
Abstract: TT 2222 npn SOT171 multilayer ceramic capacitor heatsink catalogue BLV934 philips 0201 capacitor transistor 257 isolated npn metal
Text: Philips Semiconductors Product specification UHF power transistor BLV934 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and easy design of wideband circuits NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has
|
OCR Scan
|
BLV934
OT171
OT171
col11
OT171.
transistor tt 2222
TT 2222 npn
SOT171
multilayer ceramic capacitor
heatsink catalogue
BLV934
philips 0201 capacitor
transistor 257 isolated npn metal
|
PDF
|
bfg91a
Abstract: transistor kt 801 MBS330 transistor 446-1 1SS TRANSISTOR transistor kt 326 FP 801 transistor SOT103 transistor C 2290
Text: PhHip^emiconductor^^^ • bbS3T31 0031233 T1S ■ APX^Productspecification NPN 6 GHz wideband transistor — ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emltter plastic SOT 103 envelope. PIN It is designed for application in
|
OCR Scan
|
G031233
BFG91A
bfg91a
transistor kt 801
MBS330
transistor 446-1
1SS TRANSISTOR
transistor kt 326
FP 801
transistor SOT103
transistor C 2290
|
PDF
|
transistor b 1238
Abstract: BFG91A UBB328 7407 IC and
Text: PhHip^emiconductor^^^ • bbS3T31 0031233 T1S ■ APX^Productspecification NPN 6 GHz wideband transistor — ^ BFG91A N AHER P H ILIP S /D IS C R E TE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emltter plastic SO T 103 envelope. PIN It is designed for application in
|
OCR Scan
|
bb53T31
BFG91A
transistor b 1238
BFG91A
UBB328
7407 IC and
|
PDF
|
