smd code marking v8 sot23
Abstract: philips marking 06
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PMBD354 Schottky barrier double diode Product specification 2002 Aug 06 Philips Semiconductors Product specification Schottky barrier double diode FEATURES PMBD354 MARKING • Low forward voltage • Small SMD package
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M3D088
PMBD354
PMBD354
MGC487
MGC421
SCA74
01/pp8
smd code marking v8 sot23
philips marking 06
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A2 DIODE SMD CODE MARKING
Abstract: PMBD353 SMD marking CODE 4F pj-25 diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PMBD353 Schottky barrier double diode Product specification Supersedes data of 1999 May 25 2001 Oct 15 Philips Semiconductors Product specification Schottky barrier double diode FEATURES PMBD353 MARKING
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M3D088
PMBD353
SCA73
613514/04/pp8
A2 DIODE SMD CODE MARKING
PMBD353
SMD marking CODE 4F
pj-25 diode
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MAM387
Abstract: DIODE smd marking CODE PG
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BB157 VHF variable capacitance diode Preliminary specification 2002 Feb 06 Philips Semiconductors Preliminary specification VHF variable capacitance diode BB157 MARKING FEATURES • High linearity TYPE NUMBER
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M3D049
BB157
BB157
OD323
SCA73
613514/01/pp7
MAM387
DIODE smd marking CODE PG
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A2 DIODE SMD CODE MARKING
Abstract: MAM383 DIODE smd marking A1 smd diode A4 smd diode code A4 marking code 10 sot23 marking CODE R SMD DIODE SMD DIODE A4 data smd diode marking code smd diode marking code a2
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV70 High-speed double diode Product specification Supersedes data of 1999 May 05 2001 Oct 11 Philips Semiconductors Product specification High-speed double diode FEATURES BAV70 MARKING • Small plastic SMD package
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M3D088
BAV70
SCA73
613514/05/pp12
A2 DIODE SMD CODE MARKING
MAM383
DIODE smd marking A1
smd diode A4
smd diode code A4
marking code 10 sot23
marking CODE R SMD DIODE
SMD DIODE A4 data
smd diode marking code
smd diode marking code a2
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diode smd marking jy
Abstract: BAV199
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BAV199 Low-leakage double diode Product specification Supersedes data of 1999 May 11 2001 Oct 12 Philips Semiconductors Product specification Low-leakage double diode FEATURES BAV199 MARKING • Plastic SMD package
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M3D088
BAV199
SCA73
613514/04/pp8
diode smd marking jy
BAV199
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D793 PESDxS2UQ series Double ESD protection diode Product specification 2003 Dec 15 Philips Semiconductors Product specification Double ESD protection diode PESDxS2UQ series FEATURES MARKING • Uni-directional ESD protection of two lines or
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M3D793
RS232
PESD12VS2UQ
SCA75
R76/01/pp10
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1PS89SS04
Abstract: 1PS89SS05 1PS89SS06
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89SS04/05/06 High-speed double diodes Preliminary specification 1998 Oct 30 Philips Semiconductors Preliminary specification High-speed double diodes 1PS89SS04/05/06 MARKING FEATURES • Improved power dissipation in
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M3D425
1PS89SS04/05/06
1PS89SS04
1PS89SS05
1PS89SS06
1PS89SS04/05/06
1PS89SS.
SCA60
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors NPN general purpose transistor BC846W; BC847W; BC848W PIN CONFIGURATION FEATURES • S- mini package. n* n1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN Top view DESCRIPTION
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BC846W;
BC847W;
BC848W
OT323
MBC670
BC846AW:
BC846BW:
BC847W:
BC846W
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Untitled
Abstract: No abstract text available
Text: Philips Components Product specification Aluminum Electrolytic Capacitors Series 2222-056 FEATURES • Polarized aluminium electrolytic capacitors, non-solid • Large types, minimized dimensions, cylindrical aluminium case, insulated with a blue sleeve • Pressure relief on the top of the
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E2p device marking
Abstract: BFS17 BFS17A
Text: Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic S O T23 package. APPLICATIONS • It is intended fo r RF applications such as oscillators in TV tuners. PINNING Top view PIN DESCRIPTION
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BFS17
E2p device marking
BFS17A
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marking FR PNP SOT323
Abstract: BF824W
Text: Philips Semiconductors Product specification PNP RF transistor BF824W FEATURES • S-mini package. H= FI 1 c APPLICATIONS It is especially Intended for RF stages in FM front-ends in common base configuration. Ü» Top view DESCRIPTION PNP transistor in a plastic SOT323
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OT323
BF824W
BF824W
UAU037
OT323)
marking FR PNP SOT323
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smd code A1t
Abstract: A1T SMD diode A1t smd 10j smd diode 134 B 360 SMD smd marking code KN PMBD2835 PMBD2836 marking H01 a1t MARKING
Text: Philips Semiconductors Product specification High-speed double diodes FEATURES PMBD2835; PMBD2836 MARKING • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 35 V and 75 V respectively PINNING MARKING CODE
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PMBD2835;
PMBD2836
PMD2835,
PMD2836
PMBD2835
PMBD2836
711DflEb
smd code A1t
A1T SMD diode
A1t smd
10j smd diode
134 B 360 SMD
smd marking code KN
marking H01
a1t MARKING
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up/xr+2320
Abstract: No abstract text available
Text: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold metallization ensures excellent reliability. BFG93AW/X R9 BFG93AW/XR
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BFG93AW
BFG93AW/X;
BFG93AW/XR
BFG93AW/X
OT343
OT343R
MSB014
up/xr+2320
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BFG92AW
Abstract: transistor marking P8
Text: Product specification Philips Semiconductors BFG92AW BFG92AW/X; BFG92AW/XR NPN 6 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW P8 • Gold metallization ensures excellent reliability. BFG92AW/X P9 BFG92AW/XR
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BFG92AW
BFG92AW/X;
BFG92AW/XR
OT343
OT343R
BFG92AW/X
BFG92AW/XR
BFG92AW
BFG92AW/X
transistor marking P8
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transistor marking MTs ghz
Abstract: transistor marking P8 UHF transistor GHz Xr 1075 BFG92AW D032 y1010
Text: Product specification Philips Semiconductors B FG 92A W B FG 92A W /X; B F G 92A W /X R NPN 6 G H z w id eb an d tra n s isto r MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW • Gold metallization ensures excellent reliability.
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BFG92AW
BFG92AW/X;
BFG92AW/XR
OT343
OT343R
BFG92AW/X
BFG92AW/XR
BFG92AW
BFG92AW/X
transistor marking MTs ghz
transistor marking P8
UHF transistor GHz
Xr 1075
D032
y1010
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3H2 philips
Abstract: marking B5T BFG197W D054 DIN45004B TT5 marking
Text: Philips Semiconductors Product specification BFG197W BFG197W/X; BFG197W/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG197W V5 • Gold metallization ensures excellent reliability. BFG197W/X V8 BFG197W/XR
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BFG197W
BFG197W/X;
BFG197W/XR
OT343
OT343R
BFG197W/X
BFG197W/XR
BFG197W
BFG197W/X
3H2 philips
marking B5T
D054
DIN45004B
TT5 marking
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UHF transistor GHz
Abstract: BFG93AW DD44 pa 4010
Text: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 G H z w id eb an d tra n s isto r MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold m etallization ensures excellent reliability. BFG93AW/X
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BFG93AW
BFG93AW/X;
BFG93AW/XR
OT343
OT343R
BFG93AW/X
BFG93AW/XR
BFG93AW
BFG93AW/X
UHF transistor GHz
DD44
pa 4010
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OF IC 7909
Abstract: xr 2230 UHF transistor GHz marking 4S SOT343 4 pin dual-emitter BFG25AW marking code C1E marking c1e transistor BFG25W BFG25AWX
Text: Philips Semiconductors Product specification BFG25AW BFG25AW/X; BFG25AW/XR NPN 5 GHz wideband transistor MARKING FEATURES • Low current consumption 100 ^iA to 1 mA TYPE NUMBER • Low noise figure • Gold metallization ensures excellent reliability. CODE
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BFG25AW
BFG25AW/X;
BFG25AW/XR
OT343
OT343R
BFG25AW/X
BFG25AW/XR
BFG25AW
BFG25AW/X
OF IC 7909
xr 2230
UHF transistor GHz
marking 4S SOT343
4 pin dual-emitter
marking code C1E
marking c1e transistor
BFG25W
BFG25AWX
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smd code marking LF sot23
Abstract: No abstract text available
Text: Product specification Philips Semiconductors PMBD2837; PMBD2838 High-speed double diodes FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 30 V and 50 V respectively PINNING MARKING MARKING CODE
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PMBD2837;
PMBD2838
PMBD2837
PMD2837,
PMD2838
smd code marking LF sot23
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marking 3t1
Abstract: marking code HFr A2 diode smd marking code diode Eb SMD PMBD2837 PMBD2838 smd code marking LF sot23
Text: Philips Semiconductors Product specification High-speed double diodes FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 30 V and 50 V respectively PMBD2837; PMBD2838 MARKING PINNING MARKING CODE
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PMBD2837;
PMBD2838
PMD2837,
PMD2838
PMBD2837
PMBD2838
01GA74E
marking 3t1
marking code HFr
A2 diode smd
marking code diode Eb SMD
smd code marking LF sot23
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1PS89SS04
Abstract: 1PS89SS05 1PS89SS06 SOT49
Text: DISCRETE SEMICONDUCTORS [Mm S^EET 1PS89SS04/05/06 High-speed double diodes P relim inary specification Philips Semiconductors 1998 Oct 30 PHILIPS Philips Semiconductors Preliminary specification High-speed double diodes FEATURES 1PS89SS04/05/06 MARKING • Improved power dissipation in
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1PS89SS04/05/06
1PS89SS04/05/06
1PS89SS04
1PS89SS05
1PS89SS06
1PS89SS.
SCA60
SOT49
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smd diode schottky code marking 63
Abstract: BYR210 BYR29 smd diode schottky code marking 1A BYR28 PBYR2100CT PBYR280CT PBYR290CT smd diode schottky code marking 37 Philips marking code sot223
Text: Product specification Philips Semiconductors Schottky barrier double diodes FEATURES PBYR2100CT series PINNING • Low switching losses MARKING DESCRIPTION PIN TYPE NUMBER MARKING CODE • High breakdown voltage 1 anode a-0 • Fast recovery time 2 common cathode
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PBYR2100CT
PBYR280CT
BYR28
PBYR290CT
BYR29
BYR210
OT223
OT223)
smd diode schottky code marking 63
BYR210
BYR29
smd diode schottky code marking 1A
BYR28
smd diode schottky code marking 37
Philips marking code sot223
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BFG505W
Abstract: MLC040
Text: Philips Semiconductors Product specification BFG505W BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG505W NO • High transition frequency BFG505W/X N1 • Gold metallization ensures
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BFG505W
BFG505W/X;
BFG505W/XR
OT343
OT343R
BFG505W/X
BFG505W/XR
BFG505W
711DflZfc.
MLC040
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m lc 945
Abstract: transistor 9206 BFG590W marking code 3T3
Text: Product specification P hilips Sem iconductors BFG590W BFG590W/X; BFG590W/XR NPN 5 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG590W T1 • High transition frequency BFG590W/X T2 • Gold metallization ensures
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BFG590W
BFG590W/X;
BFG590W/XR
BFG590W/X
BFG590W/XR
OT343
OT343R
BFG590W
m lc 945
transistor 9206
marking code 3T3
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