photo diode
Abstract: MXP4003 photo diode 10 Gbps pin photo diode MXP4000 sdh microsemi photo diode pin 10 Gbps "Photo Diode" construction of photo diode 1550nm 10mW photo diode
Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
|
Original
|
PDF
|
MXP4003
MXP4000
1310nm
1550nm
MXP4003
photo diode
photo diode 10 Gbps
pin photo diode
sdh microsemi
photo diode pin 10 Gbps
"Photo Diode"
construction of photo diode
1550nm 10mW photo diode
|
Untitled
Abstract: No abstract text available
Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes
|
Original
|
PDF
|
MXP4003
MXP4000
1430nm
1550nm
MXP4003
|
25um
Abstract: No abstract text available
Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes
|
Original
|
PDF
|
MXP4003
1310nm
1550nm
MXP4000
1550nm
1430nm
MXP4003
25um
|
ED 08 diode
Abstract: ED 03 Diode
Text: Obsolete Product – not recommended for new design MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the
|
Original
|
PDF
|
MXP4003
1310nm
1550nm
dev61
MXP4003
ED 08 diode
ED 03 Diode
|
Untitled
Abstract: No abstract text available
Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
|
Original
|
PDF
|
MXP4003
1310nm
1550nm
MXP4000
1550nm
|
VCSEL array, 850nm flip
Abstract: MXP7001
Text: MXP7001 I N T E G R A T E D P R O D U C T S 10 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission
|
Original
|
PDF
|
MXP7001
850nm
VCSEL array, 850nm flip
MXP7001
|
VCSEL array, 850nm flip
Abstract: MXP7001 GaAs array, 850nm
Text: MXP7001 I N T E G R A T E D P R O D U C T S 10 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission
|
Original
|
PDF
|
MXP7001
VCSEL array, 850nm flip
MXP7001
GaAs array, 850nm
|
Untitled
Abstract: No abstract text available
Text: VC850M-H-TO46FW-PD v 1.3 15.05.2014 Description VC850M-H-TO46FW-PD is a multi mode infrared VCSEL emitting at typically 850 nm with rated output power of 10 mW cw, mounted into a standard TO-46 package, containing a monitor photo diode and sealed with a flat window cap. The VCSEL works under low forward current and voltage and with 1 Gbps
|
Original
|
PDF
|
VC850M-H-TO46FW-PD
VC850M-H-TO46FW-PD
|
PDF PIN PHOTO DIODE DESCRIPTION
Abstract: OD9602N OD9604N photo diode circuit Photo Modules OD9601N photo amplifier application circuit 8pin
Text: DATA SHEET O K I L A S E R P R O D U C T S OD9601N 1.25 Gbps OD9602N (622 Mbps) OD9604N (2.488 Gbps) + 3.3-V Photo Diode Preamp Modules February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
|
Original
|
PDF
|
OD9601N
OD9602N
OD9604N
OD9601N,
OD9602N,
OD9604
1-800-OKI-6388
PDF PIN PHOTO DIODE DESCRIPTION
OD9602N
OD9604N
photo diode circuit
Photo Modules
OD9601N
photo amplifier application circuit 8pin
|
amplifier CV 203
Abstract: VCSEL array, 850nm flip GaAs array, 850nm vcsel array Photo Diode
Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes
|
Original
|
PDF
|
LX3044/45/46
850nm
LX304X
LX3044
LX3045
LX3046
amplifier CV 203
VCSEL array, 850nm flip
GaAs array, 850nm
vcsel array
Photo Diode
|
VCSEL array, 850nm flip
Abstract: VCSEL array, 850nm, flip chip amplifier CV 203 VCSEL array, 850nm GaAs array, 850nm PIN photodiode 850nm LX3044 LX3045 LX3046 PIN PHOTO DIODE
Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes
|
Original
|
PDF
|
LX3044/45/46
LX304X
LX3044
LX3045,
LX3046,
50ohm
LX3045
LX3046
VCSEL array, 850nm flip
VCSEL array, 850nm, flip chip
amplifier CV 203
VCSEL array, 850nm
GaAs array, 850nm
PIN photodiode 850nm
LX3045
LX3046
PIN PHOTO DIODE
|
amplifier CV 203
Abstract: VCSEL array, 850nm flip GaAs array, 850nm diode array die VCSEL array, 850nm, flip chip
Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes
|
Original
|
PDF
|
LX3044/45/46
850nm
LX304X
LX3045
LX3046
145um
450um
amplifier CV 203
VCSEL array, 850nm flip
GaAs array, 850nm
diode array die
VCSEL array, 850nm, flip chip
|
VCSEL array, 850nm flip
Abstract: No abstract text available
Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes
|
Original
|
PDF
|
LX3044/45/46
850nm
LX304X
LX3044
LX3045
LX3046
VCSEL array, 850nm flip
|
Untitled
Abstract: No abstract text available
Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes
|
Original
|
PDF
|
LX3044/45/46
LX304X
LX3044
LX3045,
LX3046,
50ohm
LX3045
LX3046
|
|
|
1550nm VCSEL
Abstract: InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2
Text: LX3051 3.125 Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX3051 3 Gbps coplanar
|
Original
|
PDF
|
LX3051
1310nm
1550nm
1550nm VCSEL
InGaAs Photodiode 1550nm
photodiode sensitivity 1550nm 2
|
LX3051
Abstract: InGaAs P InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 InGaas PIN photodiode chip
Text: LX3051 3.125 Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX3051 3 Gbps coplanar
|
Original
|
PDF
|
LX3051
InGaAs P
InGaAs Photodiode 1550nm
photodiode sensitivity 1550nm 2
InGaas PIN photodiode chip
|
vcsel receiver
Abstract: MXP7002 IR 2E09 850nm 300 nA photo Diode
Text: MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission
|
Original
|
PDF
|
MXP7002
850nm
MXP7002
High-893-2570
vcsel receiver
IR 2E09
850nm 300 nA photo Diode
|
MXP7002
Abstract: IR 2E09
Text: MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission
|
Original
|
PDF
|
MXP7002
850nm
MXP7002
High893-2570
IR 2E09
|
construction of photo diode
Abstract: photo diode array amplifier MXP7A02 GaAs array, 850nm IR PHOTO DIODE amplifier 207UM
Text: MXP7A02 – 1x4 Array 3.125 Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks
|
Original
|
PDF
|
MXP7A02
10Gigabit
MXP7000
850nm
construction of photo diode
photo diode array amplifier
MXP7A02
GaAs array, 850nm
IR PHOTO DIODE amplifier
207UM
|
PIN PHOTO DIODE
Abstract: "Photo Diode" photo diode construction of photo diode MXP4002 IR PHOTO DIODE amplifier MXP4000
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
|
Original
|
PDF
|
MXP4002
MXP4000
1310nm
1550nm
MXP4002
PIN PHOTO DIODE
"Photo Diode"
photo diode
construction of photo diode
IR PHOTO DIODE amplifier
|
CMS101K2KC
Abstract: KGA4130D Tecdia transimpedance amplifier 5 GHz GTD-18408
Text: Preliminary Data Sheet December 1999 1KGA4130D 10Gbps AGC Transimpedance Amplifier IC DESCRIPTION Oki's 10 Gbps transimpedance amplifier is fabricated 0.1µm gate length P-HEMTs for high-speed optical communication. The IC has a large transimpedance, high sensitivity and a wide dynamic range.
|
Original
|
PDF
|
KGA4130D
10Gbps
10pA/Hz
120nsec.
KGA4130D
GTD-18275
100pF
CMS101K2KC
Tecdia
transimpedance amplifier 5 GHz
GTD-18408
|
DIODE ED 11
Abstract: No abstract text available
Text: Obsolete Product - not recommended for new design MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION 100µm aperture Semi-insulating substrate High Responsivity Low Dark Current High Bandwidth
|
Original
|
PDF
|
MXP7002
DIODE ED 11
|
Untitled
Abstract: No abstract text available
Text: LX3051 3.125 Gbps TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION gurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers, transceivers, transponders, optical
|
Original
|
PDF
|
LX3051
|
1550nm photo diode for 10Gbps
Abstract: MXP4003 MXP4005
Text: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. . The MXP400X series of photo diodes are currently offered in die
|
Original
|
PDF
|
MXP4005
MXP400X
12GHz
1550nm
508um
1430nm
1550nm
1550nm photo diode for 10Gbps
MXP4003
MXP4005
|
