Untitled
Abstract: No abstract text available
Text: Obsolete Product – not recommended for new design LX3050/52 12.5Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION LX3050 single die LX3052, 1x4 array die
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LX3050/52
LX3050
LX3052
1310nm
1550nm
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diode 0 dB 1550nm
Abstract: LX3050 LX3052 photo diode array amplifier 1310 vcsel photo diode array InGaAs AW32 VCSEL flip InGaAs array 1550nm
Text: LX3050/52 12.5Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATASHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX305X series of coplanar
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LX3050/52
LX305X
L14-898-8121,
LX3050/2
diode 0 dB 1550nm
LX3050
LX3052
photo diode array amplifier
1310 vcsel
photo diode array InGaAs
AW32
VCSEL flip
InGaAs array 1550nm
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Untitled
Abstract: No abstract text available
Text: LX3050/52 12.5Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATASHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX305X series of coplanar
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LX3050/52
LX305X
LX3050/2
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1430nm
Abstract: 1550NM InGaAs array 1550nm
Text: LX3050/52 12.5Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATASHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX305X series of coplanar
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LX3050/52
1310nm
1550nm
LX305X
diode1861
LX3050/2
1430nm
InGaAs array 1550nm
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InGaAs array 1550nm
Abstract: No abstract text available
Text: LX3050/52 12.5Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATASHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX305X series of coplanar
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LX3050/52
1310nm
1550nm
LX305X
diode1861
LX3050/2
InGaAs array 1550nm
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1550nm catv receiver
Abstract: LX3050 LX3052 VCSEL array, 1550
Text: LX3050/52 12.5Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION custom assembly configurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers,
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LX3050/52
LX3050
LX3052,
50ohm
LX3050
1550nm catv receiver
LX3052
VCSEL array, 1550
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LX3050
Abstract: LX3052 InGaAs array 1550nm
Text: LX3050/52 12.5Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION The LX305X series of coplanar waveguide photo diodes are currently offered in die form allowing manufacturers the versatility of
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LX3050/52
LX305X
LX3050
LX3052,
50ohm
LX3052
InGaAs array 1550nm
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LDR sensor light dark sensor
Abstract: dark light sensor using LDR AND transistor sensor LDR ldr sensor uv light PHOTO detector FillFactory Photoresistor uv pyro sensor InGaAs apd photodiode CCD and CID Technology
Text: Silicon versus Film CMOS versus CCD Units of sensitivity Color sensitivity B. Dierickx - FillFactory • • • • Photonics West 2000 Short Course Methods of scanning Methods of light detection in Silicon / CMOS Floor plan of a CMOS image sensor Basic CMOS pixels
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aifotec
Abstract: DFB-LASER 1480 nm laser diode dfb laser diode oc-48 1480 nm laser diode high power
Text: www.aifotec.com 4-Channel C-WDM-Transmitter The cooled coax DFB array Description > The new 4-Channel WDMTransmitter by AIFOtec AG is a breakthrough in cost reduction for building WDM fiberoptic transmission systems. > The very compact housing includes 4 DFB-laser diodes InGaAs/InP
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STM-16
OC-48)
D-82152
aifotec
DFB-LASER
1480 nm laser diode
dfb laser diode oc-48
1480 nm laser diode high power
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C9750
Abstract: C10990 S11059-78HT S11154-01CT S10604
Text: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS
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C10988MA
C10627
D-82211
DE128228814
C9750
C10990
S11059-78HT
S11154-01CT
S10604
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Light Detector laser
Abstract: short distance measurement ir infrared diode
Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that
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KOTH0001E15
Light Detector laser
short distance measurement ir infrared diode
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InGaAs PIN photodiode Long Wavelength 2.6
Abstract: THOMSON-CSF PRODUCTS ir photodiode array ingaas QS 7779 BP 40 Diagramm R T Thomson-CSF diodes
Text: TH7426A/27A NEAR INFRARED InGaAs LINEAR IMAGE SENSOR 300 PIXELS DESCRIPTION These devices are based on a 300 InGaAs photodiode linear array, with a 26µm pitch, using an in line pixel layout or a staggered pixel layout. Two 150:1 CCD multiplexor chips, offering memory and delayed readout capability, are hybridized on both sides of the
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TH7426A/27A
TH74KA26A/TH74KA27A
TH74KB26A/TH74KB27A.
DSTH7426A/27AT/0398
InGaAs PIN photodiode Long Wavelength 2.6
THOMSON-CSF PRODUCTS
ir photodiode array ingaas
QS 7779
BP 40 Diagramm R T
Thomson-CSF diodes
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Selection guide
Abstract: No abstract text available
Text: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high
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KIRD0005E02
Selection guide
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THOMSON-CSF linear array CCD
Abstract: silicon vidicon BP 40 Diagramm R T
Text: TH7422B NEAR INFRARED InGaAs LINEAR SENSOR 300 PIXELS DESCRIPTION This device is based on a 300 InGaAs photodiode linear array, with a 26µm pitch, using an in line pixel layout. Two 150:1 CCD multiplexors chips, offering memory and delayed readout capability, are hybridized on both sides of
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TH7422B
74KA22B
74KB22B.
THOMSON-CSF linear array CCD
silicon vidicon
BP 40 Diagramm R T
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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Selection guide
Abstract: United Detector Technology PSD
Text: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable
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KACC0001E02
Selection guide
United Detector Technology PSD
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C10500
Abstract: linear CCD 512 TDI cmos image sensor
Text: Selection guide - Sep. 2014 Image Sensors Various types of image sensors covering a wide spectral response range for photometry HAMAMATSU PHOTONICS K.K. Image sensors Various types of image sensors covering a wide spectral response range for photometry H A M A M AT S U d e v e l o p s a n d p r o d u c e s a d vanced image sensors for measurement applications in spectral and energy ranges including infrared, visible, ultraviolet, vacuum ultraviolet, soft X-rays and hard X-rays. We provide
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KAPD0002E12
C10500
linear CCD 512
TDI cmos image sensor
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near IR photodiodes
Abstract: S8745-01 S8558
Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5
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KSPD0001E09
near IR photodiodes
S8745-01
S8558
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subwoofer 1000 watts amplifier
Abstract: 12v subwoofer amp circuits 500w mosfet based pulse width modulation inverter high subwoofer 1000 watts amplifier LX1585 lx1691 350w power amplifier stereo subwoofer pcb 1722 12v class d amplifier 40W high subwoofer 100 watts amplifier
Text: VOLUME New product guide Subwoofer Center Channel 11 Left Front LX1722 Right Front The LX1721 / LX1722 is a high performance Class-D stereo controller IC targeted for high efficiency audio requirements. Ideal for battery powered products, portable systems or space
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LX1722
LX1721
LX1722
subwoofer 1000 watts amplifier
12v subwoofer amp circuits
500w mosfet based pulse width modulation inverter
high subwoofer 1000 watts amplifier
LX1585
lx1691
350w power amplifier stereo
subwoofer pcb 1722
12v class d amplifier 40W
high subwoofer 100 watts amplifier
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FND-100Q
Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.
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CAT0506P
FND-100Q
FND-100
C30724E
YAG-444-4A
InGaAs APD quadrant
PerkinElmer fnd-100q
Si apd photodiode
nir emitter leds with 700 to 900 nm
SPCM-AQR
C30950E
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Untitled
Abstract: No abstract text available
Text: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such
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DK-8381
KLED0002E01
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Sensors PSD
Abstract: No abstract text available
Text: Module products 1 Mini-spectrometers 1-1 1-2 1-3 1-4 1-5 1-6 1-7 Hamamatsu technologies Structure Characteristics Operation mode Evaluation software New approaches Applications 2 MPPC modules 2-1 2-2 2-3 2-4 2-5 Features How to use Characteristics New approaches
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16-element
C9004)
KACCC0426EB
Sensors PSD
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R7600-M64
Abstract: S10362-11-100C circuit diagram of a laser lighter
Text: NEWS 02 2008 SOLID STATE PRODUCTS PAGE 9 New Si PIN photodiodes S10783 and S10784 SOLID STATE PRODUCTS Red LED for POF Data Communications PAGE 10 ELECTRON TUBE PRODUCTS 75W Xenon Lamp Series PAGE 28 SYSTEMS PRODUCTS Cooled CCD Camera ORCA-R2 PAGE 38 Highlights
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S10783
S10784
P2211
DE128228814
R7600-M64
S10362-11-100C
circuit diagram of a laser lighter
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APD InGaAs array
Abstract: Photodiodes Pyroelectric Detectors Image Sensors Photodiode apd amplifier VISIBLE Photodiode Array Detectors INSB PHOTODIODE Avalanche cmos detector H4741
Text: Selection Guide Types and Applications of Hamamatsu Opto-semiconductors. 2, 3 Si Photodiodes S1226, S1227 Series UV to Visible Light, for Precision Photometry, Suppressed IR Sensitivity 4 S1336, S1337 Series (UV to IR, for Precision Photometry) .4
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S1226,
S1227
S1336,
S1337
S2386,
S2387
C2719,
C6386
H4741,
H3651,
APD InGaAs array
Photodiodes
Pyroelectric Detectors
Image Sensors
Photodiode apd amplifier VISIBLE
Photodiode Array Detectors
INSB PHOTODIODE
Avalanche cmos detector
H4741
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