GaAs photodiode Emcore
Abstract: No abstract text available
Text: PRODUCT BRIEF | FEBRUARY 10, 2004 1 x 4 GaAs PIN Photodiode Array Model 8485-1406 Features Data rates of 3.125 Gb/s per channel Excellent responsivity Uniform channel to channel characteristics Excellent crosstalk attenuation Low dark current EMCORE’s 4 channel Gallium Arsenide GaAs PIN photodiode array is
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Abstract: No abstract text available
Text: PHOTODIODE GaAs photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)
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G8921-01
SE-171
KIRD1055E01
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE GaAs PIN photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)
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G8921-01
SE-171
KGPD1009E02
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16 Photodiode-Array
Abstract: Photodiode-Array SE-171 G8921-01 KGPD1009E02 GaAs photodiode operating temperature range
Text: PHOTODIODE GaAs PIN photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)
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G8921-01
SE-171
KGPD1009E02
16 Photodiode-Array
Photodiode-Array
G8921-01
KGPD1009E02
GaAs photodiode operating temperature range
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Photodiode-Array
Abstract: G8921-01 KGPD1009E02 SE-171
Text: PHOTODIODE GaAs PIN photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)
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G8921-01
SE-171
KGPD1009E02
Photodiode-Array
G8921-01
KGPD1009E02
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emcore
Abstract: PHOTODIODE 4 CHANNEL ARRAY EMCORE photodiode GaAs photodiode Emcore photodiode die WAFER 1055 EMCORE photodiode array
Text: 1 x 4 GaAs PIN Photodiode Array Product Description EMCORE’s 4 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high
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80x80
emcore
PHOTODIODE 4 CHANNEL ARRAY
EMCORE photodiode
GaAs photodiode Emcore
photodiode die WAFER
1055
EMCORE photodiode array
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photodiode die WAFER
Abstract: GaAs photodiode Emcore PHOTODIODE 4 CHANNEL ARRAY emcore EMCORE photodiode array 50 um photodiode 1055 Photodiode Array
Text: 1 x 4 GaAs PIN Photodiode Array Product Description EMCORE’s 4 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high
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photodiode die WAFER
GaAs photodiode Emcore
PHOTODIODE 4 CHANNEL ARRAY
emcore
EMCORE photodiode array
50 um photodiode
1055
Photodiode Array
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PIN-Photodiode-Array
Abstract: EMCORE photodiode photodiode die WAFER PHOTODIODE 4 CHANNEL ARRAY 1055 GaAs photodiode Emcore PIN photodiode crosstalk
Text: 1 x 4 GaAs PIN Photodiode Array preliminary information Product Description EMCORE’s 4 channel Gallium Arsenide (GaAs) PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high
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PIN-Photodiode-Array
EMCORE photodiode
photodiode die WAFER
PHOTODIODE 4 CHANNEL ARRAY
1055
GaAs photodiode Emcore
PIN photodiode crosstalk
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Untitled
Abstract: No abstract text available
Text: 4 Gbps PIN Photodiode Chip GaAs PIN Photodiode 1 low bias voltage, low dark current 1 up to 4.25 Gbps speed 1 e.g. for GbE, fiber channel data transmission 1 Preliminary ELECTRO-OPTICAL CHARACTERISTICS PARAMETER Responsivity Active area diameter SYMBOL UNITS
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PIN-ULM-04-TN
ULMPIN-04-TN-U0101U
ULMPIN-04-TN-U0112U
ULMPIN-04-TN-U0104U
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InGaAs array 1550nm
Abstract: InGaAs Photodiode 1550nm Photodiode 1550nm bandwidth InGaAs photodiode array chip 1550nm photodiode 8 Ghz
Text: KPA4-2N/8-2N 4/8 Channel InGaAs Photodiode Array Description 4- and 8-channel arrays with 250 micron (KPA4-2N and KPA8-2N, respectively) pitch are available as a standard product. Other number of channels, array pitch or a Si bench assembled array are available as
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1550nm,
-10dBm
04-04G
InGaAs array 1550nm
InGaAs Photodiode 1550nm
Photodiode 1550nm bandwidth
InGaAs photodiode array chip
1550nm photodiode 8 Ghz
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spcm-aq4c
Abstract: PerkinElmer Avalanche Photodiode SPCM Arrays of Photon-Counting Detectors lidar apd model DTS1005 SPCM-AQ
Text: The SPCM-AQ4C is a 4-channel photon counting card capable of detecting single photons of light over the wavelength range from 400 nm to 1060 nm. Each channel is independent from the others. The SPCM-AQ4C uses a unique silicon avalanche photodiode SliK that has a circular active
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650nm.
spcm-aq4c
PerkinElmer Avalanche Photodiode
SPCM
Arrays of Photon-Counting Detectors
lidar apd model
DTS1005
SPCM-AQ
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vcsel array
Abstract: FCC2 Coupling to Fiber
Text: PRODUCT INFORMATION This device consists of a 4-channel PIN Photodiode array in a miniature sur face-m ountable MT package. It is based on a unique combination of self alignment technology and direct opti cal coupling to fiber, resulting in opti mum coupling efficiency without need
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4D469
850nm
vcsel array
FCC2
Coupling to Fiber
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PIN photodiode 850nm
Abstract: VCSEL array, 850nm 4D469 4D470 VCSEL array, 850nm for fiber ribbon fiber connected photodiode fiber array fiber array mt 4channel fiber array Coupling to Fiber
Text: PRODUCT INFORMATION 4D470 840nm LI Parallel Datacom, Telecom PIN Array This device consists of a 4-channel PIN Photodiode array in a miniature surface-mountable MT package. It is based on a unique combination of selfalignment technology and direct optical coupling to fiber, resulting in optimum coupling efficiency without need
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4D470
840nm
4D469
850nm
1-800-96MITEL
PIN photodiode 850nm
VCSEL array, 850nm
4D470
VCSEL array, 850nm for fiber
ribbon fiber connected photodiode
fiber array
fiber array mt
4channel fiber array
Coupling to Fiber
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4D469
Abstract: 4D470 VR33
Text: PRODUCT INFORMATION 4D470 840nm LI Parallel Datacom, Telecom PIN Array This device consists of a 4-channel PIN Photodiode array in a miniature surface-mountable MT package. It is based on a unique combination of selfalignment technology and direct optical coupling to fiber, resulting in optimum coupling efficiency without need
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4D470
840nm
4D469
850nm
4D470
VR33
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HDJD-S831-QT333
Abstract: 90 nm CMOS Photodiode-Array QFN-16 Photodiode as light sensor
Text: HDJD-S831-QT333 Color Sensor Module Data Sheet Description Avago Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic
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HDJD-S831-QT333
QFN-16,
5989-3259EN
AV01-0435EN
HDJD-S831-QT333
90 nm CMOS
Photodiode-Array
QFN-16
Photodiode as light sensor
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HDJD-S831-QT333
Abstract: QFN-16 PHOTODIODE 4 CHANNEL ARRAY
Text: Agilent HDJD-S831-QT333 Color Sensor Module Data Sheet Description Agilent Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic
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HDJD-S831-QT333
QFN-16,
5989-2180EN
HDJD-S831-QT333
QFN-16
PHOTODIODE 4 CHANNEL ARRAY
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color filter photodiode
Abstract: Photodiode as light sensor tray 12X12 green light photodiode sensor
Text: HDJD-S831-QT000 Color Sensor Module Data Sheet Description Avago Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic
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HDJD-S831-QT000
QFN-16,
5989-2179EN
5989-3617EN
color filter photodiode
Photodiode as light sensor
tray 12X12
green light photodiode sensor
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HDJD-S833-QT333
Abstract: PHOTODIODE 4 CHANNEL ARRAY Photodiode-Array QFN-16 resistor table lp622 Capacitor Selection Guide Photodiode as color light sensor with color filters color filter photodiode
Text: HDJD-S833-QT333 Color Sensor Module Data Sheet Description Avago Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic
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HDJD-S833-QT333
QFN-16,
AV02-0111EN
HDJD-S833-QT333
PHOTODIODE 4 CHANNEL ARRAY
Photodiode-Array
QFN-16
resistor table
lp622
Capacitor Selection Guide
Photodiode as color light sensor with color filters
color filter photodiode
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Untitled
Abstract: No abstract text available
Text: HDJD-S831-QT333 Color Sensor Module Data Sheet Description Avago Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic
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HDJD-S831-QT333
QFN-16,
5989-2180EN
5989-3259EN
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with ampli¿er S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an ampli¿er and a phosphor sheet attached to the active area for X-ray
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S8865-64G/-128G/-256G
S8866-64G-02/-128G-02
S8866-64G-02/-128G-02
C9118
S8865-256G.
SE-171
KMPD1105E02
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silicon photodiode array
Abstract: 16 Photodiode-Array S8866-64 S8866-64G-02 KMPDC0072EA PHOTODIODE 4 CHANNEL ARRAY
Text: Photodiode arrays with ampli¿er S8866-64/-128 Photodiode array combined with signal processing IC The S8866-64 and S8866-128 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, clamp circuit and hold circuit, making the external circuit con¿guration simple. For X-ray detection applications, types S8866-64G-02, S8866-128G-02
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S8866-64/-128
S8866-64
S8866-128
S8866-64G-02,
S8866-128G-02)
S8866-64:
S8866-128:
SE-171
KMPD1104E01
silicon photodiode array
16 Photodiode-Array
S8866-64G-02
KMPDC0072EA
PHOTODIODE 4 CHANNEL ARRAY
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photodiode 460nm
Abstract: HDJD-S822-QR999 LF-310 Photodiode-Array GS11 IPC-SM-782 QFN-16 11-LP
Text: HDJD-S822-QR999 RGB Color Sensor Data Sheet Description Features HDJD-S822-QR999 is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three transimpedance amplifiers in a single monolithic CMOS IC
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HDJD-S822-QR999
HDJD-S822-QR999
QFN-16
AV02-0110EN
photodiode 460nm
LF-310
Photodiode-Array
GS11
IPC-SM-782
11-LP
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with ampli¿er S8866-64/-128 Photodiode array combined with signal processing IC The S8866-64 and S8866-128 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, clamp circuit and
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S8866-64/-128
S8866-64
S8866-128
S8866-64G-02,
S8866128G-02)
S8866-64:
S8866-128:
SE-171
KMPD1104E02
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with ampli¿er S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an ampli¿er and a phosphor sheet attached to the active area for X-ray
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S8865-64G/-128G/-256G
S8866-64G-02/-128G-02
C9118
S8865-256G.
SE-171
KMPD1105E01
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