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    Untitled

    Abstract: No abstract text available
    Text: BURR - BROW N [ OPT210 ] MONOLITHIC PHOTODIODE AND AMPLIFIER 300kHz Bandwidth at RF = 1MQ DESCRIPTION FEATURES • BOOTSTRAP ANODE DRIVE: Extends Bandwidth: 900kHz RF = 100KQ Reduces Noise • LARGE PHOTODIODE: 0.09" x 0.09" • HIGH RESPONSIVITY: 0.45A/W (650nm)


    OCR Scan     		OPT210 300kHz 900kHz 100KQ) 650nm) OPT210 OPT21Q PDF

    photodiode 650nm nep

    Abstract: OPT202 OPT202G OPT202P OPT202W 650NM photodiode
    Text: OPT202 PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION ● BANDWIDTH: 50kHz ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm ● 1MΩ FEEDBACK RESISTOR ● HIGH RESPONSIVITY: 0.45A/W (650nm) The OPT202 is an opto-electronic integrated circuit


    Original     		OPT202 50kHz 650nm) OPT202 AB-061 OPT209 20dB/decade photodiode 650nm nep OPT202G OPT202P OPT202W 650NM photodiode PDF

    pt-211

    Abstract: No abstract text available
    Text: B U R R - BROW N < 0PT21Q MONOLITHIC PHOTODIODE AND AMPLIFIER 300kHz Bandwidth at RF = 1MQ FEATURES DESCRIPTION • BOOTSTRAP ANODE DRIVE: Extends Bandwidth: 900kHz RF = 100KÎ2 Reduces Noise • LARGE PHOTODIODE: 0.09" x 0.09" • HIGH RESPONSIVITY: 0.45A/W (650nm)


    OCR Scan     		0PT21Q 300kHz 900kHz 650nm) OPT210 ZZ321-1 pt-211 PDF

    650NM photodiode

    Abstract: OPT202 OPT202G OPT202P OPT202W photodiode 650nm nep blue laser sources pickup
    Text: OPT202 FPO PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION ● BANDWIDTH: 50kHz ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm ● 1MΩ FEEDBACK RESISTOR ● HIGH RESPONSIVITY: 0.45A/W (650nm) The OPT202 is an opto-electronic integrated circuit


    Original     		OPT202 50kHz 650nm) OPT202 AB-061 OPT209 20dB/decade 650NM photodiode OPT202G OPT202P OPT202W photodiode 650nm nep blue laser sources pickup PDF

    photodiode 650nm nep

    Abstract: 650NM photodiode OPT301 photodiode amplifier OPT301M QPT301D QPT301M Burr-Brown instrumentation amplifier 147 internal low noise 650nm laser diode ld OPT301D
    Text: INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION • PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm • 1MQ FEEDBACK RESISTOR • HIGH RESPONSIVITY: 0.47A/W (650nm) • IMPROVED UV RESPONSE • LOW DARK ERRORS: 2mV • BANDWIDTH: 4kHz • WIDE SUPPLY RANGE: ±2.25 to ±18V


    OCR Scan     		OPT301 650nm) OPT301 17313bS DD24171 photodiode 650nm nep 650NM photodiode photodiode amplifier OPT301M QPT301D QPT301M Burr-Brown instrumentation amplifier 147 internal low noise 650nm laser diode ld OPT301D PDF

    650NM photodiode

    Abstract: photodiode 650nm nep LOG100 photodiode amplifier photodiode with voltage output 650NM 650NM photodiode 40 kilohertz REF200 transistor 2n2222 TO-90 OPT201
    Text: OPT201 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm ● 1MΩ FEEDBACK RESISTOR ● HIGH RESPONSIVITY: 0.45A/W (650nm) ● LOW DARK ERRORS: 2mV ● BANDWIDTH: 4kHz ● WIDE SUPPLY RANGE: ±2.25 to ±18V


    Original     		OPT201 650nm) OPT201 eliminatesA627 IN4148 REF200 REF200 2N2222 650NM photodiode photodiode 650nm nep LOG100 photodiode amplifier photodiode with voltage output 650NM 650NM photodiode 40 kilohertz transistor 2n2222 TO-90 PDF

    GGEM

    Abstract: No abstract text available
    Text: 0PT3Q1 B U R R -B R O W N E ] INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION • PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm • 1MQ FEEDBACK RESISTOR • HIGH RESPONSIVITY: 0.47A/W (650nm) • IMPROVED UV RESPONSE • LOW DARK ERRORS: 2mV


    OCR Scan     		650nm) 400fiA OPT301 OPT301 17313bS 0D24171 GGEM PDF

    Untitled

    Abstract: No abstract text available
    Text: Or, Call Customer S em e at 1-8MI-548-6132 USA Only B U R R -B R O W N « E QPT201 1 INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION • PHOTODIODE SIZE: 0.090 x 0.090 Inch (2.29 x 2.29mm) • 1MÎÏ FEEDBACK RESISTOR • HIGH RESPONSIVITY: 0.45A/W (650nm)


    OCR Scan     		1-8MI-548-6132 QPT201 650nm) OPT201 4-20mA PDF

    ZENER B89

    Abstract: DD3113 650NM photodiode OPT202G 10DC CIPT202 OPT202 OPT202P OPT202W
    Text: Or, Call Customer Service at 1-800-548-6132 USA Only BURR - BROWN OPT202 1 E rrfT • PHOTODIODE SIZE: 0.090 x 0.090 inch (2.29 x 2.29mm) • 1M£2 FEEDBACK RESISTOR • HIGH RESPONSIVITY: 0.45A/W (650nm) • LOW DARK ERRORS: 2mV The CIPT202 is an optoelectronic integrated circuit


    OCR Scan     		50kHz 650nm) 400nA OPT209 OPT202 AB-061 17313LS D3113là ZENER B89 DD3113 650NM photodiode OPT202G 10DC CIPT202 OPT202 OPT202P OPT202W PDF

    650NM photodiode

    Abstract: LOG100 photodiode 650nm nep photodiode amplifier REF200
    Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


    Original     		OPT301 OPT301 650nm) 20dB/decade REF200 REF200 2N2222 4-20mA 650NM photodiode LOG100 photodiode 650nm nep photodiode amplifier PDF

    photodiode 650nm nep

    Abstract: LOG100 OPT301 resistor1M REF200 OPT301M 650NM photodiode 650NM photodetector opt301s 2N2222 curve
    Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


    Original     		OPT301 OPT301 650nm) photodiode 650nm nep LOG100 resistor1M REF200 OPT301M 650NM photodiode 650NM photodetector opt301s 2N2222 curve PDF

    photodiode amplifier

    Abstract: AB-061 OPT211P 2N5116 650NM photodiode AB-034 OPT211 1258B
    Text: OPT211 MONOLITHIC PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● WIDE BANDWIDTH, HIGH RESPONSIVITY: The OPT211 is a monolithic photodiode with on-chip FET-input transpedance amplifier, that provides wide bandwidth at very high gains. Uncommitted input and


    Original     		OPT211 OPT211 50kHz 150kHz 13kHz 650nm) AB-034 20kHz photodiode amplifier AB-061 OPT211P 2N5116 650NM photodiode AB-034 1258B PDF

    photodiode 650nm nep

    Abstract: 650NM photodiode LOG100 INA106 OPT301 OPT301M REF200 650NM photodetector blue laser sources pickup
    Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


    Original     		OPT301 OPT301 650nm) 20dB/decade REF200 REF200 2N2222 4-20mA photodiode 650nm nep 650NM photodiode LOG100 INA106 OPT301M 650NM photodetector blue laser sources pickup PDF

    photodiode 650nm nep

    Abstract: 650NM photodiode LOG100 OPT301M INA106 OPT301 REF200 650NM photodetector photodiode 650nm opt301s
    Text: OPT301 FPO 70% ABRIDGED DATA SHEET For Complete Data Sheet Call FaxLine 1-800-548-6133 Request Document Number 11228 INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit


    Original     		OPT301 OPT301 650nm) 20dB/decade REF200 REF200 2N2222 4-20mA photodiode 650nm nep 650NM photodiode LOG100 OPT301M INA106 650NM photodetector photodiode 650nm opt301s PDF

    LOG100

    Abstract: OPT101 OPT101P OPT101P-J OPT101P-R OPT101P-R-J OPT101W
    Text: OPT101 FPO 70 MONOLITHIC PHOTODIODE AND SINGLE-SUPPLY TRANSIMPEDANCE AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● The OPT101 is a monolithic photodiode with on-chip transimpedance amplifier. Output voltage increases linearly with light intensity. The amplifier is designed


    Original     		OPT101 OPT101 LOG100 log10 V02/V01) REF102 OPA627 IN4148 LOG100 OPT101P OPT101P-J OPT101P-R OPT101P-R-J OPT101W PDF

    photodiode 650nm nep

    Abstract: 650NM photodiode 650NM photodiode 40 kilohertz 650NM photodetector LOG100 OPT101 Photoconductive Infrared Sensor 106V light dependent resistor metal proximity detector sensor
    Text: OPT101 FPO 70 MONOLITHIC PHOTODIODE AND SINGLE-SUPPLY TRANSIMPEDANCE AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● The OPT101 is a monolithic photodiode with on-chip transimpedance amplifier. Output voltage increases linearly with light intensity. The amplifier is designed


    Original     		OPT101 OPT101 INA118 LOG100 log10 V02/V01) REF102 OPA627 photodiode 650nm nep 650NM photodiode 650NM photodiode 40 kilohertz 650NM photodetector LOG100 Photoconductive Infrared Sensor 106V light dependent resistor metal proximity detector sensor PDF

    OPT211

    Abstract: 650NM photodiode photodiode 650nm nep photodiode amplifier AB-061 2N5116 650NM photodiode 40 kilohertz AB-034 ultraviolet sensor OPT211P
    Text: OPT211 MONOLITHIC PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● WIDE BANDWIDTH, HIGH RESPONSIVITY: The OPT211 is a monolithic photodiode with on-chip FET-input transpedance amplifier, that provides wide bandwidth at very high gains. Uncommitted input and


    Original     		OPT211 OPT211 50kHz 150kHz 13kHz 650nm) AB-034 20kHz 650NM photodiode photodiode 650nm nep photodiode amplifier AB-061 2N5116 650NM photodiode 40 kilohertz AB-034 ultraviolet sensor OPT211P PDF

    LOG100

    Abstract: OPT209 OPT209P REF200 650NM photodiode 1232B INA106 equivalent
    Text: OPT209 FPO FPO 70% PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT209 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


    Original     		OPT209 OPT209 650nm) 16kHz IN4148 REF200 REF200 2N2222 LOG100 OPT209P 650NM photodiode 1232B INA106 equivalent PDF

    650NM photodiode

    Abstract: OPT101 application OPT101 LOG100 106V metal proximity detector sensor photodiode 650nm nep 8pin sip 10k
    Text: OPT101 MONOLITHIC PHOTODIODE AND SINGLE-SUPPLY TRANSIMPEDANCE AMPLIFIER FEATURES DESCRIPTION ● SINGLE SUPPLY: +2.7 to +36V The OPT101 is a monolithic photodiode with on-chip transimpedance amplifier. Output voltage increases linearly with light intensity. The amplifier is designed


    Original     		OPT101 OPT101 650nm) 14kHz INA118 LOG100 log10 V02/V01) 650NM photodiode OPT101 application LOG100 106V metal proximity detector sensor photodiode 650nm nep 8pin sip 10k PDF

    LOG100

    Abstract: OPT301 OPT301M REF200 6nc3 650nm photoDIODE Photodiode 650nm
    Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


    Original     		OPT301 OPT301 650nm) LOG100 OPT301M REF200 6nc3 650nm photoDIODE Photodiode 650nm PDF

    OPT210P-J

    Abstract: photodiode 650nm nep OPT210 OPT210P OPT210W 1313a 650NM photodetector
    Text: OPT210 MONOLITHIC PHOTODIODE AND AMPLIFIER 300kHz Bandwidth at RF = 1MΩ FEATURES DESCRIPTION ● BOOTSTRAP ANODE DRIVE: Extends Bandwidth: 900kHz RF = 100KΩ Reduces Noise ● LARGE PHOTODIODE: 0.09" x 0.09" The OPT210 is a photodetector consisting of a high


    Original     		OPT210 300kHz 900kHz OPT210 650nm) OPT210P-J photodiode 650nm nep OPT210P OPT210W 1313a 650NM photodetector PDF

    650NM photodiode

    Abstract: photodiode amplifier 650NM photodetector Isolated 4-20ma photodiode 650nm nep LOG100 2n2222 transistor datasheet 650NM photodiode 40 kilohertz metal proximity detector sensor op amp
    Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


    Original     		OPT301 OPT301 650nm) 650NM photodiode photodiode amplifier 650NM photodetector Isolated 4-20ma photodiode 650nm nep LOG100 2n2222 transistor datasheet 650NM photodiode 40 kilohertz metal proximity detector sensor op amp PDF

    IN4626

    Abstract: 300PA20 photodiode has capacitance of 5pf. bandwidth 650NM photodetector 5.6v zener OPT210P 650NM photodiode 650NM photodiode 40 kilohertz IN462 silicon photodiode
    Text: OPT210 FPO MONOLITHIC PHOTODIODE AND AMPLIFIER 300kHz Bandwidth at RF = 1MΩ FEATURES DESCRIPTION ● BOOTSTRAP ANODE DRIVE: Extends Bandwidth: 900kHz RF = 100KΩ Reduces Noise ● LARGE PHOTODIODE: 0.09" x 0.09" The OPT210 is a photodetector consisting of a high


    Original     		OPT210 300kHz 900kHz OPT210 650nm) IN4626 300PA20 photodiode has capacitance of 5pf. bandwidth 650NM photodetector 5.6v zener OPT210P 650NM photodiode 650NM photodiode 40 kilohertz IN462 silicon photodiode PDF

    LOG100

    Abstract: OPA177 OPT101 OPT101P OPT101P-J REF200 Photodiode 650nm
    Text: OPT101 SBBS002A – JANUARY 1994 – REVISED OCTOBER 2003 MONOLITHIC PHOTODIODE AND SINGLE-SUPPLY TRANSIMPEDANCE AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● ● ● The OPT101 is a monolithic photodiode with on-chip transimpedance amplifier. Output voltage increases linearly


    Original     		OPT101 SBBS002A OPT101 LOG100 OPA177 OPT101P OPT101P-J REF200 Photodiode 650nm PDF