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    PHOTODIODE INGAAS NEP Search Results

    PHOTODIODE INGAAS NEP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    OPT301M Texas Instruments Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 Visit Texas Instruments Buy
    OPT101P-JG4 Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT101P-J Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT101PG4 Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 Visit Texas Instruments Buy
    OPT101P Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 Visit Texas Instruments Buy

    PHOTODIODE INGAAS NEP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    G9906-01

    Abstract: KIRD1075E02 SE-171 photodiode InGaAs NEP
    Text: PHOTODIODE InGaAs PIN photodiode G9906-01 Small package InGaAs PIN photodiode for C-L band G9906-01 is an InGaAs PIN photodiode designed to minimize temperature dependence of the photo sensitivity in the C-L band. It has an active area of φ0.3 mm and is housed in a subminiature package making it ideal for use in smaller modules.


    Original     		G9906-01 G9906-01 SE-171 KIRD1075E02 KIRD1075E02 photodiode InGaAs NEP PDF

    Untitled

    Abstract: No abstract text available
    Text: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.


    Original     		G12430 G12430-016D G12430-032D G12430-046D 40-pin 48-pin 18-pin KIRD1124E02 PDF

    Untitled

    Abstract: No abstract text available
    Text: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.


    Original     		G12430 G12430-016D G12430-032D G12430-046D 40-pin 48-pin 18-pin KIRD1124E01 PDF

    opto 2561

    Abstract: 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP
    Text: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging


    Original     		MXA-256-1, MXA-256-X opto 2561 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP PDF

    InGaas PIN photodiode, 1550 NEP

    Abstract: PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array
    Text: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging


    Original     		MXA-256-1, MXA-256-X InGaas PIN photodiode, 1550 NEP PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array PDF

    G8370-01

    Abstract: G8370 G8370-02 G8370-03 G8370-05
    Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E03 G8370-01 G8370-02 G8370-03 G8370-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E04 PDF

    photodiode InGaAs NEP

    Abstract: G8370 G8370-01 G8370-02 G8370-03 G8370-05
    Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E03 photodiode InGaAs NEP G8370-01 G8370-02 G8370-03 G8370-05 PDF

    G8370-01

    Abstract: G8370 G8370-02 G8370-03 G8370-05
    Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E04 2006DN G8370-01 G8370-02 G8370-03 G8370-05 PDF

    G8370-01

    Abstract: G8370 G8370-02 G8370-03 G8370-05
    Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E01 G8370-01 G8370-02 G8370-03 G8370-05 PDF

    InGaas PIN photodiode, 1550 NEP

    Abstract: InGaAs Photodiode 1550nm photodiode 1550nm nep InGaas PIN photodiode, 1550 sensitivity InGaas APD photodiode, 1550 sensitivity InGaAs APD photodiode 1550 pin photodiode 2 GHz 1550 InGaAs Avalanche Photodiode IAG-Series avalanche 1550nm photodiode 5 Ghz IAG 080
    Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.


    Original     		G8605 SE-171 KIRD1049E02 PDF

    A3179

    Abstract: A3179-01 C1103-04 C4159-02 C4159-03 G8605 G8605-11 G8605-12 G8605-13 G8605-15
    Text: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.


    Original     		G8605 SE-171 KIRD1049E02 A3179 A3179-01 C1103-04 C4159-02 C4159-03 G8605-11 G8605-12 G8605-13 G8605-15 PDF

    C4159-03

    Abstract: c4159 e G8605-13 G8605-15 A3179 A3179-01 C1103-04 C4159-02 G8605 G8605-11
    Text: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.


    Original     		G8605 SE-171 KIRD1049E01 C4159-03 c4159 e G8605-13 G8605-15 A3179 A3179-01 C1103-04 C4159-02 G8605-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.


    Original     		G8605 SE-171 KIRD1049E01 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.


    Original     		G8605 SE-171 KIRD1004E02 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G9801 series Receptacle type, 1.3/1.55 µm, 2 GHz G9801 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a receptacle module. Packages are available with various connectors and


    Original     		G9801 SE-171 KIRD1081E01 PDF

    G9801

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G9801 series Receptacle type, 1.3/1.55 µm, 2 GHz G9801 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a receptacle module. Packages are available with various connectors and


    Original     		G9801 SE-171 KIRD1081E01 PDF

    IAG 080

    Abstract: No abstract text available
    Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Photodiode EPD-1300-0-0.5 Preliminary 6/21/2007 rev. 03/07 Wavelength Type Technology Case Infrared Planar InGaAs/InP TO-18 Description InGaAs-Photodiode mounted in TO-18 standard package covered with epoxy. High spectral sensitivity in the infrared range NIR, SWIR .


    Original     		EPD-1300-0-0 D-12555 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 SE-171 KIRD1064E04 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 SE-171 KIRD1064E03 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 G8370-81 G8370-82 G8370-83 G8370-85 SE-171 KIRD1064E02 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 G8370-81 G8370-82 G8370-83 G8370-85 SE-171 KIRD1064E03 PDF