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    quadrant photodiode

    Abstract: photodiode array encoder photodiode encoder KMPD1054E01 S8594 SE-171 spot light size photodiode PIN photodiode chip GaP photodiode
    Text: PHOTODIODE Si PIN photodiode S8594 Quadrant photodiode with slit mask for encoder S8594 is a quadrant photodiode array with a slit mask code strip formed on the Si chip surface. Features Applications l Quadrant photodiode with slit mask of L/S (Line/Space)=10/10 µm


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    PDF S8594 S8594 SE-171 KMPD1054E01 quadrant photodiode photodiode array encoder photodiode encoder KMPD1054E01 spot light size photodiode PIN photodiode chip GaP photodiode

    GaP photodiode

    Abstract: quadrant photodiode
    Text: PHOTODIODE Si PIN photodiode S8594 Quadrant photodiode with slit mask for encoder S8594 is a quadrant photodiode array with a slit mask code strip formed on the Si chip surface. Features Applications l Quadrant photodiode with slit mask of L/S (Line/Space)=10/10 µm


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    PDF S8594 S8594 SE-171 KMPD1054E01 GaP photodiode quadrant photodiode

    S5591

    Abstract: S5590
    Text: PHOTODIODE Si photodiode with preamp S5590, S5591 Photodiode and preamp integrated with feedback resistance and capacitance S5590, S5591 are low-noise light sensors consisting of a large area Si photodiode, op amp, and feedback resistance and capacitance, all


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    PDF S5590, S5591 S5591 S5590 S5590: S5591: SE-171 KSPD1028E02

    S8745

    Abstract: S8746
    Text: PHOTODIODE Si photodiode with preamp S8745, S8746 Photodiode and preamp integrated with feedback resistance and capacitance S8745, S8746 are low-noise light sensors consisting of a large area Si photodiode, op amp, and feedback resistance and capacitance, all


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    PDF S8745, S8746 S8746 S8745 S8745: S8746: SE-171 KSPD1054E02

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si photodiode S10359 Highly reliable, quadrant photodiode for ArF excimer laser monitor S10359 is a Si photodiode with sensitivity extending into the VUV vacuum ultraviolet region and provides high reliability for VUV detection. S10359 is a variant (quadrant device) of the previously marketed S9683 photodiode. Its hermetically sealed package ensures


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    PDF S10359 S10359 S9683 SE-171 KSPD1076E03

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si photodiode with preamp S8745, S8746 Photodiode and preamp integrated with feedback resistance and capacitance S8745, S8746 are low-noise light sensors consisting of a large area Si photodiode, op amp, and feedback resistance and capacitance, all


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    PDF S8745, S8746 S8746 S8745 S8745: S8746: SE-171 KSPD1054E02

    photodiode amplifier

    Abstract: 16 Photodiode-Array charge amplifier x-ray Photodiode-Array Preci-Dip LXF Series PHOTODIODE current voltage amplifier array S8865-128 S8865-64G simple Photodiode
    Text: PHOTODIODE Photodiode array with amplifier S8865 series Photodiode array combined with signal processing circuit chip S8865 series is a Si photodiode array combined with a signal processing circuit chip. The signal processing circuit chip is formed by CMOS


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    PDF S8865 S8865-64: S8865-12phone: SE-171 KMPD1071E01 photodiode amplifier 16 Photodiode-Array charge amplifier x-ray Photodiode-Array Preci-Dip LXF Series PHOTODIODE current voltage amplifier array S8865-128 S8865-64G simple Photodiode

    photodiode amplifier

    Abstract: Photodiode-Array S8865-128 S8865 S8865-64 x-ray cmos IMAGE SENSOR
    Text: PHOTODIODE Photodiode array with amplifier S8865 series Photodiode array combined with signal processing circuit chip S8865 series is a Si photodiode array combined with a signal processing circuit chip. The signal processing circuit chip is formed by CMOS


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    PDF S8865 S8865-64: S8865-12phone: SE-171 KMPD1071E01 photodiode amplifier Photodiode-Array S8865-128 S8865-64 x-ray cmos IMAGE SENSOR

    S8745

    Abstract: S8746
    Text: PHOTODIODE Si photodiode with preamp S8745, S8746 Photodiode and preamp integrated with feedback resistance and capacitance S8745, S8746 are low-noise light sensors consisting of a large area Si photodiode, op amp, and feedback resistance and capacitance, all


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    PDF S8745, S8746 S8746 S8745 S8745: S8746: SE-171 KSPD1054E03

    S8745-01

    Abstract: S8746-01
    Text: PHOTODIODE Si photodiode with preamp S8745-01, S8746-01 Photodiode and preamp integrated with feedback resistance and capacitance S8745-01, S8746-01 are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a


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    PDF S8745-01, S8746-01 S8746-01 S8745-01 S8745-01: S8746-01: SE-171 KSPD1065E02

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si photodiode with preamp S8745, S8746 Photodiode and preamp integrated with feedback resistance and capacitance S8745, S8746 are low-noise light sensors consisting of a large area Si photodiode, op amp, and feedback resistance and capacitance, all


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    PDF S8745, S8746 S8746 S8745 S8745: S8746: SE-171 KSPD1054E02

    5483-08ax

    Abstract: S6493-64 9 ELEMENT photoDIODE ARRAY 16 Photodiode-Array PHOTODIODE current voltage amplifier array chn 935 C6495 molex 5483 photodiode amplifier S6493
    Text: PHOTODIODE Photodiode array with amplifier S6493/S6494 series Photodiode arrays combined with a signal processing circuit chip S6493 and S6494 series are Si photodiode arrays efficiently combined with a signal processing circuit. The signal processing circuit is formed on


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    PDF S6493/S6494 S6493 S6494 SE-171 KMPD1020E03 5483-08ax S6493-64 9 ELEMENT photoDIODE ARRAY 16 Photodiode-Array PHOTODIODE current voltage amplifier array chn 935 C6495 molex 5483 photodiode amplifier

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed


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    PDF S8865-256, S8865-256G S8865-256 S8865-256G SE-171 KMPD1087E01

    S8865-256G

    Abstract: No abstract text available
    Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed


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    PDF S8865-256, S8865-256G S8865-256 S8865-256G SE-171 KMPD1087E01

    S8592

    Abstract: photodiode array 16 Photodiode-Array KMPD1063E01 SE-171 9 ELEMENT photoDIODE ARRAY
    Text: Patent Pending PHOTODIODE Si photodiode array S8592 1-D photodiode array with low cross-talk S8592 is a 1-D 16-element Si photodiode array formed by micro-machining techniques to provide exceptionally low cross-talk. Patent pending Features Applications


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    PDF S8592 S8592 16-element 18-pin SE-171 KMPD1063E01 photodiode array 16 Photodiode-Array KMPD1063E01 9 ELEMENT photoDIODE ARRAY

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si photodiode with preamp S8745-01, S8746-01 Photodiode and preamp integrated with feedback resistance and capacitance S8745-01, S8746-01 are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a


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    PDF S8745-01, S8746-01 S8746-01 S8745-01 S8745-01: S8746-01:

    S-8592

    Abstract: No abstract text available
    Text: Patent Pending PHOTODIODE Si photodiode array S8592 1-D photodiode array with low cross-talk S8592 is a 1-D 16-element Si photodiode array formed by micro-machining techniques to provide exceptionally low cross-talk. Patent pending Features Applications


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    PDF S8592 S8592 16-element 18-pin SE-171 KMPD1063E01 S-8592

    S8745-01

    Abstract: S8746-01
    Text: PHOTODIODE Si photodiode with preamp S8745-01, S8746-01 Photodiode and preamp integrated with feedback resistance and capacitance S8745-01, S8746-01 are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a


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    PDF S8745-01, S8746-01 S8746-01 S8745-01 S8745-01: S8746-01: SE-171 KSPD1065E01

    uv photodiode, GaP

    Abstract: quadrant photodiode quadrant photodiode s4349 si pin photodiode KMPD1007E02 S4349 SE-171 KMPDB0126EA
    Text: PHOTODIODE Si PIN photodiode S4349 Quadrant Si PIN photodiode S4349 is a quadrant Si PIN photodiode having sensitivity in the UV to near IR spectral range. A quadrant element format allows position sensing such as for laser beam axis alignment. Features Applications


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    PDF S4349 S4349 SE-171 KMPD1007E02 uv photodiode, GaP quadrant photodiode quadrant photodiode s4349 si pin photodiode KMPD1007E02 KMPDB0126EA

    quadrant photodiode

    Abstract: KMPD1007E02 S4349 SE-171 SPECIFICATIONS OF Photodiode
    Text: PHOTODIODE Si PIN photodiode S4349 Quadrant Si PIN photodiode S4349 is a quadrant Si PIN photodiode having sensitivity in the UV to near IR spectral range. A quadrant element format allows position sensing such as for laser beam axis alignment. Features Applications


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    PDF S4349 S4349 SE-171 KMPD1007E02 quadrant photodiode KMPD1007E02 SPECIFICATIONS OF Photodiode

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si photodiode with preamp S8745-01, S8746-01 Photodiode and preamp integrated with feedback resistance and capacitance S8745-01, S8746-01 are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a


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    PDF S8745-01, S8746-01 S8746-01 S8745-01 S8745-01: S8746-01: S8745-01

    S8745-01

    Abstract: S8746-01
    Text: PHOTODIODE Si photodiode with preamp S8745-01, S8746-01 Photodiode and preamp integrated with feedback resistance and capacitance S8745-01, S8746-01 are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a


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    PDF S8745-01, S8746-01 S8746-01 S8745-01 S8745-01: S8746-01: SE-171 KSPD1065E01

    S4111-16R

    Abstract: 16 Photodiode-Array S4111-16Q 9 ELEMENT photoDIODE ARRAY
    Text: PHOTODIODE Si photodiode array S4111-16Q/-16R 16-element photodiode array S4111-16Q and S4111-16R are 16-element Si photodiode arrays in a ceramic DIP package. These photodiode arrays are chiefly developed for low-light-level detection such as spectrophotometers. S4111-16Q uses a quartz window that covers a wide spectral response range from UV


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    PDF S4111-16Q/-16R 16-element S4111-16Q S4111-16R SE-171 16 Photodiode-Array 9 ELEMENT photoDIODE ARRAY

    IR photodiode sensor

    Abstract: Photodiode Array linear C2334 linear array photodiode element silicon linear photodiode array photodiode linear array 256 C4351 silicon photodiode array Photodiode Array 2d Linear Image sensor IC
    Text: Photodiode Arrays/Linear Image Sensors 16-ELEMENT SILICON PHOTODIODE ARRAY S5668 SERIES For various measuring purpose This photodiode consists of 16 elem ents of Silicon Photodiode having active area of 1.175mm (width X 2.0mm (height) with 1.575mm pitch. This diode is


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    PDF 16-ELEMENT S5668 175mm 575mm 46-ELEMENT C4351 IR photodiode sensor Photodiode Array linear C2334 linear array photodiode element silicon linear photodiode array photodiode linear array 256 silicon photodiode array Photodiode Array 2d Linear Image sensor IC