Untitled
Abstract: No abstract text available
Text: External dimensions Unit : mm RPR-220UC30N Reflective photosensor (photoreflector) 2.8 6.4 Through hole 2.8 Absolute maximum ratings (Ta=25°C) Unit 50 mA Reverse voltage VR 5 V PD 80 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO
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RPR-220UC30N
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IL-S-C2-S-10000
Abstract: ILS*2c2 ILSC2S10000 s2c2
Text: PHOTOREFLECTOR Light modulation photoreflector P6448 Compact module combining light modulation photo IC and infrared LED P6448 is a photoreflector consisting of a light modulation photo IC and an infrared LED, etc. The light modulation photo IC allows reliable
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P6448
P6448
SE-171
KPC1002E02
IL-S-C2-S-10000
ILS*2c2
ILSC2S10000
s2c2
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RPR-220
Abstract: No abstract text available
Text: RPR-220 Sensors Reflective photosensor photoreflector RPR-220 The RPR-220 is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A custom lamp was developed to enable the achievement of a smaller
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RPR-220
RPR-220
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DATASHEET OF IC 741
Abstract: ic 741 datasheet 7 HL 05 IC 741 pdf of 741 ic KPC1002E01 KPCA0001EA P6448 SE-171 photoreflector
Text: PHOTOREFLECTOR Light modulation photoreflector P6448 Compact module combining light modulation photo IC and infrared LED P6448 is a photoreflector consisting of a light modulation photo IC and an infrared LED, etc. The light modulation photo IC allows reliable
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P6448
P6448
SE-171
KPC1002E01
DATASHEET OF IC 741
ic 741 datasheet
7 HL 05
IC 741
pdf of 741 ic
KPC1002E01
KPCA0001EA
photoreflector
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RPR-220PC30N
Abstract: ROHM photo Reflector
Text: RPR-220PC30N Reflective photosensor photoreflector Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Forward current IF 25 mA Reverse voltage VR 5 V Output (phototransistor ) Input (LED) Parameter Power dissipation PD 100 mW Collector-emitter voltage
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RPR-220PC30N
R1010A
RPR-220PC30N
ROHM photo Reflector
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RPR-220
Abstract: reflective lens phototransistor Infrared photosensor RPR220
Text: RPR-220 Sensors Reflective photosensor photoreflector RPR-220 The RPR-220 is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a highsensitivity, silicon planar phototransistor. A custom lamp was developed to enable the achievement of a smaller package
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RPR-220
RPR-220
reflective lens phototransistor
Infrared photosensor RPR220
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Untitled
Abstract: No abstract text available
Text: RPR-220UC30N Reflective photosensor photoreflector Absolute maximum ratings (Ta=25°C) Input (LED) Parameter Output (phototransistor ) Symbol Limits Unit Forward current IF 30 mA Reverse voltage VR 10 V Power dissipation PD 80 mW Collector-emitter voltage
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RPR-220UC30N
R1010A
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RPR220
Abstract: No abstract text available
Text: RPR-220 RPR-220 Sensors Reflective photosensor photoreflector RPR-220 The RPR-220 is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A custom lamp was developed to enable the achievement of a smaller
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RPR-220
RPR-220
RPR220
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RPR-220UC30N
Abstract: P600N rpr-220
Text: RPR-220UC30N Sensors Red light source high output reflective photosensor photoreflector RPR-220UC30N The RPR-220UC30N employs a red light source which peak emitting wavelength is λp=630mm in the emitting side. Therefore, it enables not only to judge whether it is an object with conventional function or not, but also to distinguish a
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RPR-220UC30N
RPR-220UC30N
630mm
600nm
P600N
rpr-220
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Untitled
Abstract: No abstract text available
Text: Sensors Basic increments for ordering Basic order increments FInfrared LEDs FPhotointerrupters S Phototransistor output molded type FPhototransistors S Phototransistor output (case type) S Digital output FReflective photosensors (photoreflectors) S Phototransistor output
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PR-30 Series
Abstract: No abstract text available
Text: 表面実装型フォトリフレクタ PR シリーズ Surface Mountable Photo-reflector PR Series • 特徴／ Features 1. Developed as a chip-type SMD Photoreflector 2. Automatic mounting by chip mounter available 3. Reflow soldering available 1. 全機種ともSMD
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EN6029
Abstract: SPI-335-34 26M4 L35mm
Text: Ordering number : EN6029 Infrared LED SPI-335-34 SPI-335-34 Ultraminiature photoreflector single-transistor type Features • Infrared LED plus Phototransistor (single) • DIP type • Compact type : 3.4 (L) ✕ 2.7 (W) ✕ 1.5 (H) mm • Visible light cut type
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EN6029
SPI-335-34
EN6029
SPI-335-34
26M4
L35mm
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RPR-220UC30N
Abstract: No abstract text available
Text: RPR-220UC30N Reflective photosensor photoreflector Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Forward current IF 30 mA Reverse voltage VR 10 V Output (phototransistor ) Input (LED) Parameter Power dissipation PD 80 mW Collector-emitter voltage
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RPR-220UC30N
R1010A
RPR-220UC30N
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PD 2028 b
Abstract: No abstract text available
Text: SELECTION GUIDE PA RI NO. SYSTEM INFRARED EM ITTI MG DIODES : PHOTODIODES : LAMP CATEGORYBRIGHT LED PRODUCT •PHOTOTRANSISTORS • PHOTOREFLECTORS : LIGHT BED-DDDDDï PACKAGE TYPE LAMP CATEGORY: IR: Infrared Emitting Diodes PT: Phototransistors PD: Photodiodes
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940nm
880nm
840nm
PD 2028 b
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Photodiodes
Abstract: Phototransistors Infrared LED 940nm i r led 940nm
Text: INFRARED S E R I E S SELECTION GUIDE PART NO. SYSTEM • INFRARED EMITTIMG DIODES : • PHOTODIODES : LAMP CATEGORY • PHOTOTRANSISTORS : • PHOTOREFLECTORS : | pSIl LIGHT SOURCE | |- LENS APPEARANCE I 1 ^ 1 ^ [T"|
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940nm
880nm
840nm
Photodiodes
Phototransistors
Infrared LED 940nm
i r led 940nm
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Untitled
Abstract: No abstract text available
Text: Photoreflector U7 P— Phot oref l ect or f or reflow soldering I «« fi fi gliSSSft#iii|iBB6 Feature SPI-336-89 SPI-336-95 M'A>7M7yMm mmm If mA 50 50 «SiiK 3fe¥i3i»IÉ Electro-optical characteristics Topr jgj |fjg ¡;le£'M l i s i d jiâffiitjiiii tr.tfTyp. sat)Max.
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SPI-336-89
SPI-336-95
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SPI-315-05
Abstract: SPI-315-44 spi-325 PI-315-65 SPI-335-14 SPI-315-04 pin connection led emitter
Text: Photoreflector 7 :t IsU 7 U ? £ Photoreflector typical characteristics Ic - I f 7 * h') 7 U9 9 (i 7 * h-í V9 7 7° 9 (CJ t - < fti • fc tíH ifc iW itt ( l e —d ) <* Vi t o ü Sí fe lá o ( F ig . 7 ,8 ,9 ) hy ^ y 7.9 9 4 7°fr ¥->J > h^ h7 > V 7 9 9 4 7° riv"üU»ftn jz é
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SPI-315-05(
SPI-315-04
SPI-315-05
SPI-315-64
PI-335-64
PI-315-65
SPI-325
SP1-335-64
SPI-315-05
SPI-315-44
spi-325
SPI-335-14
SPI-315-04
pin connection
led emitter
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photoreflector
Abstract: 4H51 glass lens phototransistor P2826 hamamatsu photoreflector photoreflector hamamatsu
Text: HAMAMATSU CORP IIE D HSETbCH HAMAMATSU 5 • PHOTOREFLECTOR P2826 TECHNICAL DATA C 00D27G1 ~ T - V /- 7 3 Phototransistor output, Long focal distance 3mm , Thin package (4.0 x 4.2 x 1.7mm) The P2826 m iniature photoreflector uses a high pow er infrared LED and a highly sensitive phototransistor in a sm all epoxy resin
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00D27G1
P2826
P2826
photoreflector
4H51
glass lens phototransistor
hamamatsu photoreflector
photoreflector hamamatsu
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P3062-01
Abstract: hamamatsu photoreflector 3mm photo transistor P3062
Text: HAMAMATSU CORP ITE D • HESÌLDÌ HAMAMATSU OOOSbT? 7 ■ PHOTOREFLECTOR P3062-01 TECHNICAL DATA -^ /-7 3 Photo IC output digital output , Long focal distance (3mm), Thin package (4.0 x 4.2 x 1.7mm) The P3062-01 is a photoreflector combining a high-power in
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P3062-01
P3062-01
280nd
hamamatsu photoreflector
3mm photo transistor
P3062
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RPR-359F
Abstract: phototransistor visible light photoreflector
Text: RPR-359F Sensors _ Reflective photosensor photoreflector RPR-359F The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity. In addition, since it is molded in
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RPR-359F
phototransistor visible light
photoreflector
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CEN-710
Abstract: No abstract text available
Text: CENTRCNIC INC» E-Q 13E DIV D I m szso OGDOSIS TECHNICAL DATA CEN- 7 10 2 | SH EET3 Photo Reflector IDimensions •Summary The Centronic CEN-710 Photoreflector consists of a infrared light emitting diode and a phototransistor with a visible light filter in a single
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CEN-710
CEN-710
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SPI-304-04
Abstract: led CATHODE SPI-310 SPI-302-02 SPI-306 SPI-314 SPI314
Text: Photoreflectors Ta = 25*C Electro-Optical Characteristics Absolute Maximum Ratings « « « If mA SPI-302-02 x - 7 'x > SPI-304-04 4^-tz 7 7^ — 7 X > SPI-310 x - 7 ‘x > I^ H IH K tëïti ; î > J jA SPI 30 6 SPI-314 V ceo Topr le Min. V •c uA Ic Max.
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SPI-302-02
SPI-304-04
40-tz
SPI-310
SPI-314
SPI-302-02
SPI-310
led CATHODE
SPI-306
SPI-314
SPI314
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P5587
Abstract: hamamatsu photoreflector photoreflector hamamatsu
Text: PHOTOREFLECTOR PHOTO 1C OUTPUT P5587 HAMAMATSU TECHNICAL DATA • A BSO LUTE MAXIMUM RATI ^GS(Ta=25°C) [Dimensional Outline (Unit:mm) ^ ^ ra m e te rss?Si^ li# ; ìSym tìol llV a lu e iS jliünits? Forward Current 50 If mA Vr Reverse Voltaqe 5 V Input
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P5587
P5587
hamamatsu photoreflector
photoreflector hamamatsu
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P5588
Abstract: No abstract text available
Text: PHOTOREFLECTOR PHOTO 1C OUTPUT P5588 H A M A M A T S U TECHNICAL DATA ABSOLUTE MAXIMUM RATINGS (Ta=25°C) •.' Paramat er •• Forward Current Input Reverse Voltaqe Power Dissipation Supply Voltaqe Output Voltaqe Output Output Current Power Dissipation
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P5588
P5588
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