Untitled
Abstract: No abstract text available
Text: Sensors Basic increments for ordering Basic order increments FInfrared LEDs FPhotointerrupters S Phototransistor output molded type FPhototransistors S Phototransistor output (case type) S Digital output FReflective photosensors (photoreflectors) S Phototransistor output
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phototransistor
Abstract: No abstract text available
Text: Sensors Sensor product tables FInfrared Light Emitting Diodes FPhototransistors 150 Sensor product tables Sensors Sensor product tables FPhotointerrupters S Phototransistor output molded type S Phototransistor output (encased type) 151 Sensors S Digital phototransistor output
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Untitled
Abstract: No abstract text available
Text: Phototransistor S4404-01 High sensitivity phototransistor S4404-01 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications Miniature plastic package with lens Tape start/end mark sensor for VTRs, etc. Visible-cut package
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S4404-01
S4404-01
SE-171
KPTR1002E02
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Untitled
Abstract: No abstract text available
Text: Phototransistor S4404-18 High sensitivity phototransistor S4404-18 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications Miniature plastic package with lens Tape start/end mark sensor for VTRs, etc. Visible-cut package
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S4404-18
S4404-18
SE-171
KPTR1005E01
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KPCB0001EA
Abstract: S2829 SE-171
Text: PHOTOTRANSISTOR Phototransistor S2829 Subminiature package phototransistor S2829 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications l Subminiature plastic package with lens l Visible-cut package l High sensitivity: 1.0 mA 1000 lx
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S2829
S2829
SE-171
KPTR1001E02
KPCB0001EA
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phototransistor 500-600 nm
Abstract: phototransistor 600 nm S2829 KPCB0001EA SE-171
Text: PHOTOTRANSISTOR Phototransistor S2829 Subminiature package phototransistor S2829 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications l Subminiature plastic package with lens l Visible-cut package l High sensitivity: 1.0 mA 1000 lx
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S2829
S2829
SE-171
KPTR1001E02
phototransistor 500-600 nm
phototransistor 600 nm
KPCB0001EA
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phototransistor 600 nm
Abstract: phototransistor visible light high sensitivity phototransistor KPCB0001EA S4404-01 SE-171
Text: Phototransistor S4404-01 High sensitivity phototransistor S4404-01 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications Miniature plastic package with lens Tape start/end mark sensor for VTRs, etc. Visible-cut package
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S4404-01
S4404-01
SE-171
KPTR1002E02
phototransistor 600 nm
phototransistor visible light
high sensitivity phototransistor
KPCB0001EA
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high sensitivity phototransistor
Abstract: KPCB0001EA S4404-01 SE-171
Text: PHOTOTRANSISTOR Phototransistor S4404-01 High sensitivity phototransistor S4404-01 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications l Miniature plastic package with lens l Visible-cut package l High sensitivity: 2.8 mA 1000 lx
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S4404-01
S4404-01
SE-171
KPTR1002E01
high sensitivity phototransistor
KPCB0001EA
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Untitled
Abstract: No abstract text available
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT277 PACKAGE DIMENSIONS DESCRIPTION! The MCT277 ¡s a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.
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MCT277
E50151
C1686
C1679
C1243
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Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT270 PACKAGE DIMENSIONS DESCRIPTIO N The MCT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor. WWW
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MCT270
MCT270
E90700
ST1603A
C1682
C1681
C1683
C1685
C1296A
74bfc
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Untitled
Abstract: No abstract text available
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT270 PACKAGE DIMENSION! DESCRIPTION The M CT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.
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MCT270
MCT270
2500VAC
3000VAC
E50151
C2090
C1681
C1682
C1683
C1684
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PC3HU72YIP0B
Abstract: GP2AP002S00F GP1S296HCPSF GP1A173LCS2F GP2AP002A00F GP1UXC4xQS PC815XNNSZ0F GP1A101C2KSF GP2Y0A60SZLF GP1S173LCS2F
Text: OPTO PHOTOCOUPLER LINEUP • Photocoupler Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage, etc. Low input current AC input response Darlington phototransistor
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PC35x
series/PC451J00000F
PC364NJ0000F
PC355NJ0000F
PC367NJ0000F
PC354NJ0000F
PC365NJ0000F
PC3HU72YIP0B
GP1UF31xXP0F:
GP1UF31xYP0F:
PC3HU72YIP0B
GP2AP002S00F
GP1S296HCPSF
GP1A173LCS2F
GP2AP002A00F
GP1UXC4xQS
PC815XNNSZ0F
GP1A101C2KSF
GP2Y0A60SZLF
GP1S173LCS2F
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Untitled
Abstract: No abstract text available
Text: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.
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MCT271
MCT271
E90700
C1682
C1681
C1683
C1684
C1296A
74bbfl51
C1294
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C1685 transistor
Abstract: transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271
Text: [ S PHOTOTRANSISTOR OPTOCOUPLER U OPTOELECTRONICS MCT271 DESCRIPTION PACKAGE DIMENSIONS & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.
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MCT271
ST1603A
C2079
E90700
C1682
C1683
C1684
C1685
C1296A
C1685 transistor
transistor c1684
C1681
C2079
KJh transistor
TRANSISTOR C1685
C1679
C1680
C1686
MCT271
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C1681
Abstract: transistor c1684 c1685 NPN C1685 transistor t051
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35
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MCT272
MCT272
Ratio--75%
time--10
E50151
C2090
C1683
C1684
C1294
C1681
transistor c1684
c1685
NPN C1685
transistor t051
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C1243
Abstract: C2090
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS MCT276 PACKAGE IENSIONS The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode Is selectively coupled with a high speed NPN silicon phototransistor. r~ 6.86
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MCT276
MCT276
E5015CAL
C1686
C1679
C1680
C1243
C1243
C2090
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TIL111
Abstract: C1681
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOISOLATOR TIL111 DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is
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TIL111
TIL111
E50151
C2079
C1686
C1679
C1680
C1681
C1682
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C1684
Abstract: C1683 C1681 transistor c1684 C1684 transistor transistor c1682 C1296A
Text: C sö PHOTOTRANSISTOR OPTOCOUPLER DPTDELECîHGNiCS 1 MCT271 PACKAGE DIMENSIONS DESCRIPTION The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.
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MCT271
MCT271
E90700
C1682
C1681
C1683
C1684
C1296A
transistor c1684
C1684 transistor
transistor c1682
C1296A
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Untitled
Abstract: No abstract text available
Text: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is
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TIL111
TIL111
E90700
ST1603A
C2079
74bbfiÂ
C1684
C1683
C1685
C1294
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TIL111
Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOISOLATOF OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type o ptically coupled isolator. An infrared em itting diode m anufactured from specially grow n gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is
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TIL111
TIL111
ST1603A
C2079
C1686
C1679
C1680
C1682
C1681
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PT100MF1MP
Abstract: phototransistor sharp
Text: Under development New product PT100MF1MP Phototransistor Compact, Surface Mount Type Phototransistor Outline Dimensions 0.75 1.5 Unit : mm 1.5 0.4 1 2.2 (1) Compact, thin type(3.0 x 1.5 × 2.2mm) (2) Darlington phototransistor output (3) Surface mount type
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PT100MF1MP
phototransistor sharp
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Untitled
Abstract: No abstract text available
Text: SILICON SENSORS PHOTOINTERRUPTERS PHOTOINTERRUPTER PERFORMANCE SPECIFICATIONS Photointerrupters consist of an infrared emitting diode facing a silicon NPN phototransistor packaged in a black thermoplastic housing. The phototransistor switches from high to low
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SS750-20
100pps
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c1251
Abstract: C1336 C1240 diode C1109 C1240 C1321 C1322 C1324 MCT276 S555
Text: DESIGNER SERIES MCT276 Monsanto PHOTOTRANSISTOR OPTOISOLATORS FEATURE SPECIFICATIONS DESCRIPTION • Highest speed discrete phototransistor optoisolator The MCT276 is a phototransistor-type optically coupled isolator. An infrared emitting diode manu factured from specially grown gallium arsenide is selec
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MCT276
E50151
MCT276
Cto150Â
c1251
C1336
C1240 diode
C1109
C1240
C1321
C1322
C1324
S555
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phototransistor 800 nm
Abstract: datasheet phototransistor Phototransistor EPH-3260 500LUX
Text: ELEKON Phototransistor EPH-3260 High reliable, silicon planer type phototransistor for small precision equipment. Applications: All kinds of sensor Specifications & Ratings: Parameter @ 25ºC Symbol Collector Emitter Voltage Emitter Collector Voltage Collector Current
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500Lux
100pe
phototransistor 800 nm
datasheet phototransistor
Phototransistor
EPH-3260
500LUX
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