BS170
Abstract: MOSFET bs170 bs170 TO-92 pin diagram of bs170 TO-226 MARKING bs170 TO226 BS170RLRA BS170RLRAG to-92 mosfet
Text: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features • Pb−Free Package is Available* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current (Note)
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BS170
O-226)
o1982.
BS170/D
BS170
MOSFET bs170
bs170 TO-92
pin diagram of bs170
TO-226
MARKING bs170
TO226
BS170RLRA
BS170RLRAG
to-92 mosfet
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pin diagram of bs170
Abstract: BS170
Text: BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features • · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B · · Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — D 0.41 0.63 E 3.43 3.68
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BS170
MIL-STD-202,
DS21802
pin diagram of bs170
BS170
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BS170A
Abstract: No abstract text available
Text: BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features • · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B TO-92 Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — C Mechanical Data ·
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BS170
MIL-STD-202,
pul10
DS21802
BS170A
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equivalent of BS170
Abstract: pin diagram of bs170 BS170
Text: BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR POWER SEMICONDUCTOR Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A TO-92 B C Mechanical Data • • • • Case: TO-92, Plastic
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BS170
MIL-STD-202,
DS21802
equivalent of BS170
pin diagram of bs170
BS170
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bs170 TO-92
Abstract: No abstract text available
Text: BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR POWER SEMICONDUCTOR Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B TO-92 Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7
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BS170
MIL-STD-202,
DS21802
bs170 TO-92
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BS170 application note
Abstract: BS170 BS170G BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1 pin diagram of bs170 bs170 TO-92
Text: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 V N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 V RDS(on) = 5 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk
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BS170
O-226)
BS170/D
BS170 application note
BS170
BS170G
BS170RL1
BS170RLRA
BS170RLRM
BS170RLRP
BS170ZL1
pin diagram of bs170
bs170 TO-92
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BS170
Abstract: BS170G BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1 bs170 TO-92
Text: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 V N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 V RDS(on) = 5 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk
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BS170
O-226)
BS170/D
BS170
BS170G
BS170RL1
BS170RLRA
BS170RLRM
BS170RLRP
BS170ZL1
bs170 TO-92
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BS170G
Abstract: BS170 BS170RLRAG mosfet bs170
Text: BS170G Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features http://onsemi.com • This is a Pb−Free Device* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current (Note)
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BS170G
O-226)
BS170/D
BS170G
BS170
BS170RLRAG
mosfet bs170
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Untitled
Abstract: No abstract text available
Text: BS170G Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features http://onsemi.com • This is a Pb−Free Device* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current (Note)
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BS170G
BS170/D
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BS170RL1
Abstract: MOSFET bs170 BS170
Text: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 V N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 V RDS(on) = 5 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk
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BS170
O-226)
BS170
BS170RL1
MOSFET bs170
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BS170
Abstract: BS170 application note BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1
Text: BS170 Preferred Device Small Signal MOSFET 500 mAmps, 60 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit VDS 60 Vdc VGS VGSM ±20 ±40 Vdc Vpk Drain Current Note 1. ID 0.5 Adc Total Device Dissipation @ TA = 25°C PD
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BS170
r14525
BS170/D
BS170
BS170 application note
BS170RL1
BS170RLRA
BS170RLRM
BS170RLRP
BS170ZL1
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transistor BS170
Abstract: equivalent of BS170 TO 92 BS170 BS170 transistor MOSFET BS170 diode marking 226 BS170G BS170RL1 BS170RLRA BS170RLRAG
Text: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40
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BS170
O-226)
BS170/D
transistor BS170
equivalent of BS170
TO 92 BS170
BS170
transistor MOSFET BS170
diode marking 226
BS170G
BS170RL1
BS170RLRA
BS170RLRAG
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AS5020-E
Abstract: AS5020 BS170
Text: AS5020-E AS5020 6-BIT ABSOLUTE ANGULAR POSITION ENCODER Extended Temperature Range DATA SHEET DATA SHEET General Description Key Features - Rotary absolute position measurement with 6-bit resolution 64 positions within full 360° degree rotation range Rotation speed of magnetic source up to 30,000 rpm
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AS5020-E
AS5020
AS5020
AS5020-E
BS170
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Untitled
Abstract: No abstract text available
Text: AS5020-E 6-BIT ABSOLUTE ANGULAR POSITION ENCODER Extended Temperature Range Key Features - Rotary absolute position measurement with 6-bit resolution 64 positions within full 360° rotation range Rotation speed of magnetic source up to 30,000 rpm Digital output signal with Synchronous Serial Interface
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AS5020-E
AS5020
23-Sep-03
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Hall Effect Sensors
Abstract: AS5022-E BS170 Hall Effect Sensors daisy
Text: AS5022-E LOW SPEED 6-BIT ROTARY ENCODER Extended Temperature Range Key Features - Rotary absolute position measurement with 6-bit resolution 64 positions within full 360° rotation range Rotation speed of up to 60 rpm Digital output signal with Synchronous Serial Interface
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AS5022-E
AS5022
23-Sep-03
Hall Effect Sensors
AS5022-E
BS170
Hall Effect Sensors daisy
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Untitled
Abstract: No abstract text available
Text: AS5020-E AS5020 6-BIT ABSOLUTE ANGULAR POSITION ENCODER Extended Temperature Range Key Features - Rotary absolute position measurement with 6-bit resolution 64 positions within full 360° degree rotation range Rotation speed of magnetic source up to 30,000 rpm
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AS5020-E
AS5020
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PCF793X
Abstract: H400X PCF793 HITAG 2 protocol 9352 339 00122 HITAG micro PROTOCOL transponders philips hitag free on HT 648 L hitag Security Transponder HITAG
Text: HT CM400 HITAG Core Module Hardware Product Specification Revision 2.0 November 1996 Core Module HT CM400 Rev.: 2.0 November 1996 Table of Contents 1. Introduction 5 2. System Overview 7 2.1. Transponders 2.2. Host 2.3. I/O - Functions 2.4. Connecting the Antenna
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CM400
SCB52
PCF793X
H400X
PCF793
HITAG 2 protocol
9352 339 00122
HITAG micro PROTOCOL
transponders philips hitag
free on HT 648 L
hitag
Security Transponder HITAG
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316 bcg
Abstract: 316 bcg MLX90316 mlx 161.02 marking code E5 SMD ic smd code Hall 256BEEPROM BS170 SMD HALL SENSOR SS 94 A2 MLX 90 360 MLX90316
Text: MLX90316 Rotary Position Sensor IC Features and Benefits Absolute Rotary Position Sensor IC Simple & Robust Magnetic Design Tria⊗is Hall Technology Programmable Angular Range up to 360 Degrees Programmable Linear Transfer Characteristic Selectable Analog Ratiometric , PWM, Serial Protocol
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MLX90316
TSSOP16
ISO14001
316 bcg
316 bcg MLX90316
mlx 161.02
marking code E5 SMD ic
smd code Hall
256BEEPROM
BS170 SMD
HALL SENSOR SS 94 A2
MLX 90 360
MLX90316
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316 bcg
Abstract: 316 bcg MLX90316 SPI6 mlx 161.02 10k potentiometer, through hole, rotation 270 deg smd diode bcg marking code E5 SMD ic angle position sensors data sheet mlx smd marking KD MLX90316
Text: MLX90316 Rotary Position Sensor IC Features and Benefits Absolute Rotary Position Sensor IC Simple & Robust Magnetic Design Tria⊗is Hall Technology Programmable Angular Range up to 360 Degrees Programmable Linear Transfer Characteristic Selectable Analog Ratiometric , PWM, Serial Protocol
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MLX90316
TSSOP16
ISO14001
316 bcg
316 bcg MLX90316
SPI6
mlx 161.02
10k potentiometer, through hole, rotation 270 deg
smd diode bcg
marking code E5 SMD ic
angle position sensors data sheet mlx
smd marking KD
MLX90316
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Untitled
Abstract: No abstract text available
Text: BS170 VISHAY N-CHANNEL ENHANCEMENT MODE TRANSISTOR E M ir / I/uPOWEFTSEMICONDUCTOR Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown A TO-92 Mechanical Data_
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OCR Scan
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PDF
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BS170
MIL-STD-202,
DS21802
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fet n BS170
Abstract: No abstract text available
Text: WTELEDYNE COMPONENTS BS170 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FET ABSOLUTE MAXIMUM RATINGS FEATURES • ■ ■ TC = +25°C unless otherwise specified Reliable, low cost, plastic package European TO-92 pin-out Low capacitance Drain-Source Voltage. 60V
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OCR Scan
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PDF
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BS170
fet n BS170
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BS170
Abstract: No abstract text available
Text: BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown TO-92 Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — D 0.41 0.63 E 3.43 3.68 G 2.42 2.67 H
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OCR Scan
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PDF
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BS170
MIL-STD-202,
DS21802
BS170
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pin diagram of bs170
Abstract: bs170 TO-92 TO 92 BS170
Text: TELEDYNE COMPONENTS ôcil7bOE 00077^^ 5 • TSC 3bE D T -S 5 -2 .5 WTELEDYNE COMPONENTS BS170 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FET FEATURES ABSOLUTE MAXIMUM RATINGS ■ ■ ■ Reliable,low cost, plastic package European TO -92 pin-out Low capacitance
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OCR Scan
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PDF
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BS170
pin diagram of bs170
bs170 TO-92
TO 92 BS170
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BS170
Abstract: No abstract text available
Text: BS170 VISHAY N-CHANNEL ENHANCEMENT MODE TRANSISTOR /Li T E M I ri I POWER SEMICONDUCTOR / Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown TO-92 Mechanical Data Case: TO-92, Plastic
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OCR Scan
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PDF
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BS170
MIL-STD-202,
DS21802
BS170
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