quadrant photodiode
Abstract: photodiode array encoder photodiode encoder KMPD1054E01 S8594 SE-171 spot light size photodiode PIN photodiode chip GaP photodiode
Text: PHOTODIODE Si PIN photodiode S8594 Quadrant photodiode with slit mask for encoder S8594 is a quadrant photodiode array with a slit mask code strip formed on the Si chip surface. Features Applications l Quadrant photodiode with slit mask of L/S (Line/Space)=10/10 µm
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S8594
S8594
SE-171
KMPD1054E01
quadrant photodiode
photodiode array encoder
photodiode encoder
KMPD1054E01
spot light size photodiode
PIN photodiode chip
GaP photodiode
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GaP photodiode
Abstract: quadrant photodiode
Text: PHOTODIODE Si PIN photodiode S8594 Quadrant photodiode with slit mask for encoder S8594 is a quadrant photodiode array with a slit mask code strip formed on the Si chip surface. Features Applications l Quadrant photodiode with slit mask of L/S (Line/Space)=10/10 µm
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S8594
S8594
SE-171
KMPD1054E01
GaP photodiode
quadrant photodiode
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10458D
Abstract: No abstract text available
Text: 10458D 10 GHz High Power PIN Photodiode Receiver DATASHEET | NOVEMBER 2013 MICROWAVE The 10458 PIN microwave photodiode receiver incorporates a high-speed planar PIN photodiode with low-noise bias and monitor electronics. The unit installs in EMCORE’s System 10000 3 RU equipment rack providing a highly reliable, high power photodiode
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10458D
10458D-SA
10458D-FA
0990A
10901G-NA
10901G-UK
10901G-EU
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PIN photodiode 500 nm
Abstract: GFD1300-550 Photodiode Honeywell DBM 01 ACTIVE LOAD PHOTODIODE photodiode esd sensitivity pin Photodiode 1300 nm
Text: GFD1300-550 1300 nm InGaAs PIN Photodiode FEATURES • InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/µW at a 1300 nm wavelength • Typical bandwidth of 100 MHZ • Operating temperature-10¡C to +65¡C Opho_225.tif DESCRIPTION The GFD1300-550 is an InGaAs photodiode with
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GFD1300-550
temperature-10
GFD1300-550
FIBER54
PIN photodiode 500 nm
Photodiode
Honeywell DBM 01
ACTIVE LOAD PHOTODIODE
photodiode esd sensitivity
pin Photodiode 1300 nm
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Untitled
Abstract: No abstract text available
Text: 10 Gbps PIN Photodiode Chip GaAs PIN Photodiode 1 low bias voltage, low dark current 1 up to 10 Gbps speed 1 e.g. for GbE, fiber channel data transmission 1 Preliminary ELECTRO-OPTICAL CHARACTERISTICS Chip temperature = 25°C unless otherwise stated PARAMETER
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50Ohm
ULMPIN-10-TT-N0101U
ULMPIN-10-TT-N0112U
ULMPIN-10-TT-N0104U
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm -54 / φ2.5 mm (-51)sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps
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G10447-51/-54
SE-171
KGPD1019E03
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luminent
Abstract: InGaAs photodiode 1310 1550 InGaas PIN photodiode chip
Text: InGaAs 10 Gigabit PIN Photodiode Chip R-SP-0004-V2 Features • InGaAs/InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast response • Operates at –40 to +85ºC • Active diameter is 20µm Applications • 10 Gigabit Optical Receiver
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R-SP-0004-V2
LUMNDS058-0302
luminent
InGaAs photodiode 1310 1550
InGaas PIN photodiode chip
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE GaAs PIN photodiode with preamp G10447 series ROSA type, 850 nm, 10 Gbps Features G10447-14 G10447-54 Applications l φ1.25 mm sleeve type ROSA Receiver Optical l 10 gigabit ethernet Sub-Assembly l Optical fiber communications l High-speed response: 10 Gbps
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G10447
G10447-14
G10447-54
SE-171
KGPD1019E01
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photodiode ber 10-9
Abstract: G10447-51 G10447-54 KGPD1019E02 SE-171 LC pin rosa 10
Text: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm -54 / φ2.5 mm (-51)sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps
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G10447-51/-54
SE-171
KGPD1019E02
photodiode ber 10-9
G10447-51
G10447-54
KGPD1019E02
LC pin rosa 10
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6601 D
Abstract: No abstract text available
Text: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm -54 / φ2.5 mm (-51)sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps
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G10447-51/-54
SE-171
KGPD1019E02
6601 D
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S1722-02, S1723-05 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 and S1723-05 are high-speed Si PIN photodiodes having a large active area of φ4.1 mm S1722-02 or 10 x 10 mm (S1723-05). Using quartz
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S1722-02,
S1723-05
S1722-02
S1723-05
S1722-02)
S1723-05)
S1722-02:
S1723-05:
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far uv photodiode
Abstract: S1722-02 S1723-05 SE-171 radiation detector LARGE SURFACE AREA PHOTODIODE s1722
Text: PHOTODIODE Si PIN photodiode S1722-02, S1723-05 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 and S1723-05 are high-speed Si PIN photodiodes having a large active area of φ4.1 mm S1722-02 or 10 x 10 mm (S1723-05). Using quartz
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S1722-02,
S1723-05
S1722-02
S1723-05
S1722-02)
S1723-05)
S1722-02:
S1723-05:
far uv photodiode
SE-171
radiation detector
LARGE SURFACE AREA PHOTODIODE
s1722
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far uv photodiode
Abstract: B91 photo Transistor B91 photo diode S1722 S1722-02 S1723-05 SE-171 Si photodiode, united detector s172202 Radiation Detector
Text: PHOTODIODE Si PIN photodiode S1722-02, S1723-05 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 and S1723-05 are high-speed Si PIN photodiodes having a large active area of φ4.1 mm S1722-02 or 10 x 10 mm (S1723-05). Using quartz
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S1722-02,
S1723-05
S1722-02
S1723-05
S1722-02)
S1723-05)
S1722-02:
S1723-05:
far uv photodiode
B91 photo Transistor
B91 photo diode
S1722
SE-171
Si photodiode, united detector
s172202
Radiation Detector
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G10447-51
Abstract: G10447-54 SE-171
Text: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm G10447-54 / φ2.5 mm (G10447-51) sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps
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G10447-51/-54
G10447-54
G10447-51)
SE-171
KGPD1019E04
G10447-51
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pin Photodiode 1300 nm
Abstract: PIN photodiode 500 nm photodiode esd sensitivity GFD1300-550 pin photodiode InGaAs sensitivity InGaas PIN photodiode Photodiode photodiode amplifier PIN photodiode 300 nm photodiode PIN 1300
Text: 02 February 1998 GFD1300-550 1300 nm InGaAs PIN Photodiode FEATURES • InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/µW at a 1300 nm wavelength • Typical bandwidth of 100 MHZ • Operating temperature-10¡C to +65¡C Opho_225.tif DESCRIPTION
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GFD1300-550
temperature-10
GFD1300-550
FIBER54
pin Photodiode 1300 nm
PIN photodiode 500 nm
photodiode esd sensitivity
pin photodiode InGaAs sensitivity
InGaas PIN photodiode
Photodiode
photodiode amplifier
PIN photodiode 300 nm
photodiode PIN 1300
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S5980, S5981, S5870 Multi-element photodiodes for surface mounting Features Applications l Large active area l Laser beam axis alignment l Level meters l Pointing devices, etc. S5980: 5 x 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm
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S5980,
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S5870
S5980:
S5981:
S5870:
S5980
S5981
KPIN1012E02
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S5870
Abstract: S5980 S5981 KMPDA0036EB
Text: PHOTODIODE Si PIN photodiode S5980, S5981, S5870 Multi-element photodiodes for surface mounting Features Applications l Large active area l Laser beam axis alignment l Level meters l Pointing devices, etc. S5980: 5 x 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm
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S5981:
S5870:
S5980
S5981
SE-171
S5870
S5980
S5981
KMPDA0036EB
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S5980, S5981, S5870 Multi-element photodiodes for surface mounting Features Applications l Large active area l Laser beam axis alignment l Level meters l Pointing devices, etc. S5980: 5 x 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm
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S5980,
S5981,
S5870
S5980:
S5981:
S5870:
S5980
S5981
Topr44)
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE GaAs PIN photodiode with preamp G9287-14 ROSA type, 850 nm, 10 Gbps Features Applications l SDH/SONET l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l Optical fiber communications l High-speed response: 10 Gbps l Low power supply voltage: 3.3 V
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G9287-14
SE-171
KGPD1012E01
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GaAs photodiode Emcore
Abstract: No abstract text available
Text: PRODUCT BRIEF | FEBRUARY 10, 2003 1x12 GaAs PIN Photodiode Array, 8485-1006 Features Data rates of 2.5 Gb/s per channel EMCORE’s 12 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own
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100x150
PD1x12
GaAs photodiode Emcore
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S5870
Abstract: S5980 S5981
Text: PHOTODIODE Si PIN photodiode S5980, S5981, S5870 Multi-element photodiodes for surface mounting Features Applications l Large active area S5980: 5 x 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm l Chip carrier package suitable for surface mounting Facilitates automated surface mounting by solder reflow
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S5980,
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S5870
S5980:
S5981:
S5870:
S5980
S5981
SE-171
S5870
S5980
S5981
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S5980, S5981, S5870 Multi-element photodiodes for surface mounting Features Applications l Large active area S5980: 5 x 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm l Chip carrier package suitable for surface mounting Facilitates automated surface mounting by solder reflow
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S5980,
S5981,
S5870
S5980:
S5981:
S5870:
S5980
S5981
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S5980, S5981, S5870 Multi-element photodiodes for surface mounting Features Applications l Large active area S5980: 5 x 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm l Chip carrier package suitable for surface mounting Facilitates automated surface mounting by solder reflow
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S5981,
S5870
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S5981:
S5870:
S5980
S5981
SE-171
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Untitled
Abstract: No abstract text available
Text: G FD1300-550 1300 nm InGaAs PIN Photodiode FEATURES • InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/pW at a 1300 nm wavelength • Typical bandwidth of 100 MHZ • Operating temperature-10°C to +65°C OUTLINE DIMENSIONS in inches mm
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FD1300-550
temperature-10Â
GFD1300-550
FIBER54
GFD1300-550
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