pj2319
Abstract: pj2329 PJ2336 PJ2319CX PJ2329CX PJ2336CX PJ2315CX PJ2318CX PJ2328CX 2.85V SOT 300mA
Text: PJ2300Series 300mA CMOS LDO With Enable T he PJ2300 family is a positive voltage linear regulator SOT-23-5 developed utilizing CMOS technology featured low quiescent current 30µA typ , low dropout voltage, and high output voltage accuracy, making them ideal for battery
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PJ2300Series
300mA
PJ2300
OT-23-5
OT-23-5L
1000pF
OT-23-5L
pj2319
pj2329
PJ2336
PJ2319CX
PJ2329CX
PJ2336CX
PJ2315CX
PJ2318CX
PJ2328CX
2.85V SOT 300mA
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PJ2306
Abstract: No abstract text available
Text: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,[email protected]=65mΩ 0.006(0.15)MIN. • RDS(ON), [email protected],[email protected]=85mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance
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PJ2306
OT-23
OT-23
MIL-STD-750
2010-REV
PJ2306
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Untitled
Abstract: No abstract text available
Text: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , [email protected],[email protected]=85mΩ . 0.006(0.15)M IN • RDS(ON), VGS@10V,[email protected]=65mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance
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PJ2306
2002/95/EC
OT-23
MIL-STD-750
2010-REV
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PJ230
Abstract: No abstract text available
Text: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , [email protected],[email protected]=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters
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PJ2301
DVH6273DFNDJH
2011-REV
RB500V-40
PJ230
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Untitled
Abstract: No abstract text available
Text: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,[email protected]=65mΩ 0.006(0.15)MIN. • RDS(ON), [email protected],[email protected]=85mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance
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PJ2306
OT-23
2011/65/EU
IEC61249
OT-23
2010-REV
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PJ2301
Abstract: No abstract text available
Text: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , [email protected],[email protected]=200mΩ • RDS(ON), [email protected],[email protected]=105mΩ • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters
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PJ2301
DVH6273DFNDJH
2011-REV
PJ2301
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Untitled
Abstract: No abstract text available
Text: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,[email protected]=65mΩ • RDS(ON), [email protected],[email protected]=85mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition
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PJ2306
2010-REV
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PJ2301
Abstract: No abstract text available
Text: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , [email protected],[email protected]=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters
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PJ2301
2002/95/EC
OT-23
MIL-STD-750
2011-REV
PJ2301
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PJ2301
Abstract: No abstract text available
Text: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , [email protected],[email protected]=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters
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PJ2301
2002/95/EC
OT-23
MIL-STD-750
2011-REV
PJ2301
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PJ2306
Abstract: PJ-23 PJ230
Text: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,[email protected]=65mΩ • RDS(ON), [email protected],[email protected]=85mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition
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PJ2306
2002/95/EC
OT-23
MIL-STD-750
OT-23
2010-REV
PJ2306
PJ-23
PJ230
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PJ979
Abstract: diode PJ979 diode pj88 diode pj76 PJ74 DIODE pj88 PJ84 PJ83 diode pj86 PJ76
Text: Copper Communications Components Patch Cords – Bantam Two and Three Conductor Bantam Patch Cords Bantam patch cords are plastic jacketed, shielded cords with moldedon plugs. The plugs are made with molded insulation between conductors. Bantam patch cords are
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spw 068
Abstract: MP 1009 es IT8513 CLEVO L390T IT8513E power supply spw 068 SPW 078 adp 65 jh ac adapter schematic inverter wait
Text: Preface LCD Computer L390T Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They
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L390T
spw 068
MP 1009 es
IT8513
CLEVO
IT8513E
power supply spw 068
SPW 078
adp 65 jh ac adapter schematic
inverter wait
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SLG8SP587V
Abstract: SLG8SP587 LA5511P 216-0729042 BCM57780 ALC669X LA-5511P TPS51125 hm55 9LRS3199
Text: A B C D E 1 1 Compal Confidential 2 2 NCQD0 M/B Schematics Document Intel Arrandale/Clarksfield Processor with DDRIII + Ibex Peak-M 2009-08-10 3 3 REV:1.0 4 4 2009/08/10 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2010/08/10
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A5511
MAX17028
SLG8SP587V
SLG8SP587
LA5511P
216-0729042
BCM57780
ALC669X
LA-5511P
TPS51125
hm55
9LRS3199
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LA-3481P
Abstract: LA-3661P apa2056 LS-3484P iskaa LS-3482P 943GML LA-3661 compal 3661p LS3482p
Text: A B C D E 1 1 Compal Confidential 2 2 ISKAE LA-3661P Schematics Document Intel Yonah/Merom with 945GM/943GML/940GML+ DDRII + ICH7M 2006-12-22 3 3 REV: 0.1 4 4 2006/10/31 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2009/11/13
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LA-3661P
945GM/943GML/940GML+
2DW-0005-B03
LA-3661P
LA-3481P
apa2056
LS-3484P
iskaa
LS-3482P
943GML
LA-3661
compal 3661p
LS3482p
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LA-3711P REV 2.0
Abstract: LA-3711P LA3711P 943GML AH513 APL5151-475BC-TRL apa2056 LA-3401P LS-3448P PCBGA1466
Text: A B C D E 1 1 Compal Confidential 2 2 ISRAE LA-3711P Schematics Document Intel Yonah/Merom with 945GM/943GML/940GML+ DDRII + ICH7M 2007-01-29 3 3 REV: 0.2 4 4 2006/10/31 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2009/11/13
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LA-3711P
945GM/943GML/940GML+
PC143
PC144
LA-3711P REV 2.0
LA3711P
943GML
AH513
APL5151-475BC-TRL
apa2056
LA-3401P
LS-3448P
PCBGA1466
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G545A1
Abstract: KB926 SLG8SP556V DTA144EUA_SC70-3 AS0A626 OZ129TN FBMA-L11-201209-221LMA30T SILEGO q27b AS0A626-U2 si7686
Text: A B C D E 1 1 JITR1/R2_DDR3 2 2 Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_GM/PM+ICH9-M core logic 3 3 Friday, April 18, 2008 REV:1.0 4 4 Compal Secret Data Security Classification 2007/10/15 Issued Date 2008/10/15 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL
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LA-4141P
10Kohm
PIN23
AO4468
G545A1
KB926
SLG8SP556V
DTA144EUA_SC70-3
AS0A626
OZ129TN
FBMA-L11-201209-221LMA30T
SILEGO q27b
AS0A626-U2
si7686
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Untitled
Abstract: No abstract text available
Text: 32 SH7269 Group Renesas Starter Kit User’s Manual RENESAS MCU SH Family / SH2A Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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SH7269
R20UT0592EG
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BCM57780
Abstract: ASM1442 LA-5681P TSM0B104F4251RZ hm55 APL5607 LA5681P MP2121DQ PCH Ibex Peak-M MP2121DQ-L
Text: A B C D E 1 1 Compal Confidential 2 2 NAL90/NALG0 M/B Schematics Document Intel Auburndale/Clarksfield Processor with DDRIII + Ibex Peak-M 2009-10-20 3 3 REV:1.0 4 4 2009/5/12 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification
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NAL90/NALG0
LA-5681P
BCM57780
ASM1442
TSM0B104F4251RZ
hm55
APL5607
LA5681P
MP2121DQ
PCH Ibex Peak-M
MP2121DQ-L
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PJ-22
Abstract: No abstract text available
Text: ALC880/ALC880D 7.1 CHANNEL HIGH DEFINITION AUDIO CODEC DATASHEET Rev. 1.1 30 August 2004 Track ID: JATR-1076-21 ALC880 & ALC880D Datasheet COPYRIGHT 2004 Realtek Semiconductor Corp. All rights reserved. No part of this document may be reproduced, transmitted, transcribed, stored in a retrieval system, or translated into any language in any form or by any
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ALC880/ALC880D
JATR-1076-21
ALC880
ALC880D
ALC880D-LF
ALC880-VG
ALC880D-VG
ALC880-VG-LF
ALC880D-VG-LF
LQFP-48
PJ-22
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MB785
Abstract: AM-240320D4TOQW-T00H STM32F107VCT AM240320L8TNQW STM3210C-EVAL AM-240320L8TNQW00H SM7745HEV-50 DP83848CVV FF0245SS1 MB694
Text: UM0600 User manual STM3210C-EVAL evaluation board Introduction The STM32F107VCT evaluation board STM3210C-EVAL is designed as a complete development platform for STMicroelectronic's ARM Cortex-M3 core-based STM32F107VCT microcontroller with full speed USB-OTG, ethernet MAC, two channels of CAN2.0A/B
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UM0600
STM3210C-EVAL
STM32F107VCT
STM3210C-EVAL
STM32F107VCT
MB785
AM-240320D4TOQW-T00H
AM240320L8TNQW
AM-240320L8TNQW00H
SM7745HEV-50
DP83848CVV
FF0245SS1
MB694
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MB785
Abstract: STM32F107VCT AM-240320D4TOQW-T00H AM240320L8TNQW STM3210C-EVAL AM-240320D4TOQW-T00HR UM0600 DP83848CVV AM240320L8TNQW00H AM-240320L8TNQW00H
Text: UM0600 User manual STM3210C-EVAL evaluation board Introduction The STM32F107VCT evaluation board STM3210C-EVAL is designed as a complete development platform for STMicroelectronic's ARM Cortex-M3 core-based STM32F107VCT microcontroller with full speed USB-OTG, ethernet MAC, two channels of CAN2.0A/B
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UM0600
STM3210C-EVAL
STM32F107VCT
STM3210C-EVAL
STM32F107VCT
MB785
AM-240320D4TOQW-T00H
AM240320L8TNQW
AM-240320D4TOQW-T00HR
UM0600
DP83848CVV
AM240320L8TNQW00H
AM-240320L8TNQW00H
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SDHC PINOUT
Abstract: SDHC specification 9S12UF32 SDHC MECHANICAL SDHC memory reader PS3 usb sony ca6E MC9S12UF32 9S12UF32DGV1 0300-03FF
Text: MC9S12UF32 System on a Chip Guide V01.05 Original Release Date: 17 JAN 2002 Revised: 03 Dec 2004 TSPG - 8/16 Bit MCU Design, HKG Freescale Semiconductor, Inc. This product has been designed for use in “Commercial” applications. Please see a description below.
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MC9S12UF32
64-pin
9S12UF32DGV1/D
SDHC PINOUT
SDHC specification
9S12UF32
SDHC MECHANICAL
SDHC memory reader
PS3 usb sony
ca6E
MC9S12UF32
9S12UF32DGV1
0300-03FF
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PJ23
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICO N H O T-CARRIER U H F M IXER D IO D ES SILICO N H O T-CARRIER D IO D ES S C H O T T K Y BA R RIER D IO D ES . . . designed prim arily for UHF m ixer applications but suitablealso for use in detector and ultra-fast switching circuits. Supplied in
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O-236AB
OT-23
MMBD101L
PJ23
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GL-868
Abstract: phototube PJ-23 phototube gl-868 S000 100AC100 PJ23 GL-868/PJ-23
Text: PHOTOTUBE DESCRIPTIO N This gas-filled two-electrode phototube is de quired. While the GL-868/PJ-23 will pass some cur signed for photoelectric control apparatus where a rent in the visible region, it is designed primarily for high degree of output per unit of light flux is re use in the red and infrared region of the spectrum.
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GL-868
PJ-23
GL-868/PJ-23
K-8639391
K-8639626
phototube
PJ-23
phototube gl-868
S000
100AC100
PJ23
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