Untitled
Abstract: No abstract text available
Text: PJA94N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,[email protected]< 57 mΩ • RDS(ON), [email protected],[email protected]< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance
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Original
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PJA94N03
2002/95/EC
IEC61249
OT-23
MIL-STD-750
0084grams
2011-REV
RB500V-40
PJA94N03
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PJA94N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,[email protected]< 57 mΩ • RDS(ON), [email protected],[email protected]< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance
|
Original
|
PJA94N03
2002/95/EC
IEC61249
OT-23
MIL-STD-750
0084grams
2011-REV
RB500V-40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PJA94N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,[email protected]< 57 mΩ • RDS(ON), [email protected],[email protected]< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance
|
Original
|
PJA94N03
2002/95/EC
IEC61249
OT-23
MIL-STD-750
0084grams
2011-REV
RB500V-40
PJA94N03
|
PDF
|