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    PLATINUM Price and Stock

    LEDIL C10704_PLATINUM-4-OS

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    LEDIL C10703_PLATINUM-4-OM

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    LEDIL C10367_PLATINUMROCKET-3-M

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    Mouser Electronics C10367_PLATINUMROCKET-3-M
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    Avnet Silica C10367_PLATINUMROCKET-3-M 7 Weeks 112
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    LEDIL C10365_PLATINUMROCKET-3-W

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    Mouser Electronics C10365_PLATINUMROCKET-3-W
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    Maritex C10365_PLATINUMROCKET-3-W 20
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    LEDIL C10366_PLATINUMROCKET-3-SS

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    Mouser Electronics C10366_PLATINUMROCKET-3-SS
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    Avnet Silica C10366_PLATINUMROCKET-3-SS 7 Weeks 112
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    EBV Elektronik C10366_PLATINUMROCKET-3-SS 7 Weeks 112
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    PLATINUM Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Platinum - Tungsten Alloy Strain Gages Vishay Transducer-Class Strain Gages Original PDF

    PLATINUM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    b2545g

    Abstract: B2545 AKA b2545 B2545G diode b2545g aka B2545 M 418B-04 SBRB2545CTG SBRB2545 PPAP MANUAL for automotive industry
    Text: MBRB2545CTG, SBRB2545CTG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • 


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    PDF MBRB2545CTG, SBRB2545CTG O-220 AEC-Q101 MBRB2545CT/D b2545g B2545 AKA b2545 B2545G diode b2545g aka B2545 M 418B-04 SBRB2545CTG SBRB2545 PPAP MANUAL for automotive industry

    B20100G

    Abstract: B20100G diode AKA B20100G AKA B20100 B20100G on aka B20100G AKA B20100G diode AKA b20100 mbrb20100ctg b20100 g
    Text: MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.


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    PDF MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G O-220 AEC-Q101 MBRB20100CT/D B20100G B20100G diode AKA B20100G AKA B20100 B20100G on aka B20100G AKA B20100G diode AKA b20100 mbrb20100ctg b20100 g

    LED collimator

    Abstract: LED DRAGON X OSS-W osram golden dragon automotive
    Text: LEDIL F’FORM OPTICS OSS SQUARE lenses for Osram Dragon LEDs - Specially designed for the new Osram Golden & Platinum Dragon LED packages. Works well with all colors* and also with all the old Dragon types Lens material optical grade PC with high UV and temperature resistance


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    PDF C/220 FIN-24100 LED collimator LED DRAGON X OSS-W osram golden dragon automotive

    Untitled

    Abstract: No abstract text available
    Text: MBRP40045CTL POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    PDF MBRP40045CTL

    PLATINUM RESISTOR

    Abstract: PTFN Pt 1000 IEC 751 pt sensors PTFC rtds pt 1000 temperature sensor C101B edison 501 Platinum Resistance Temperature sensor
    Text: g RTDs: TYPE PT PLATINUM SENSORS FOR TEMPERATURE MEASUREMENT DESCRIPTION: APPLICATIONS: Thin film RTD sensing element on ceramic substrate • · · · · FEATURES: • Characteristics according to DIN IEC 751 • Temperature range: -50 to +600oC • Excellent long term stability


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    PDF 600oC 750oC PLATINUM RESISTOR PTFN Pt 1000 IEC 751 pt sensors PTFC rtds pt 1000 temperature sensor C101B edison 501 Platinum Resistance Temperature sensor

    100PT

    Abstract: 120NI Wire RTD Transmitter 3 wire RTD sensor din 43760 SCT1P34-01 SCT1P34-02 SCT1P34-03 SCT1P34-04 SCT1P34-05
    Text: SCT1P34 Linearized 2- or 3-Wire RTD Input Transmitters FEATURES DESCRIPTION ● INTERFACES TO 100Ω PLATINUM OR 120Ω NICKEL RTDs Each SCT1P34 RTD input transmitter provides a single channel of RTD input which is filtered, isolated, amplified, linearized, and converted to a process


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    PDF SCT1P34 SCT1P34 100Pt SCT1P34-01 SCT1P34-02 SCT1P34-03 SCT1P34-04 SCT1P34-05 120Ni SCT1P34N-01 100PT 120NI Wire RTD Transmitter 3 wire RTD sensor din 43760 SCT1P34-01 SCT1P34-02 SCT1P34-03 SCT1P34-04 SCT1P34-05

    law5sn

    Abstract: SMD DIODE MY
    Text: Platinum DRAGON Enhanced thin film LED Lead Pb Free Product - RoHS Compliant LR W5SN, LA W5SN, LY W5SN Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 75 lm (rot),


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    Q65110A7706

    Abstract: No abstract text available
    Text: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LCW W5SN Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klarer Silikon - Verguss, Chip level conversion • Typischer Lichtfluss: 118 lm bei 700 mA und bis zu 154 lm bei 1 A (3500K)


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    PDF 3500K) 2500K 4800K Q65110A7706

    418C

    Abstract: MBRB20100CT1
    Text: MOTOROLA Order this document by MBRB20100CT1/D SEMICONDUCTOR TECHNICAL DATA Product Preview SWITCHMODE Schottky Power Rectifier MBRB20100CT1 D2PAK–SL Straight–Leaded Through Hole Mount Package SCHOTTKY BARRIER RECTIFIER 20 AMPERES 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These


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    PDF MBRB20100CT1/D MBRB20100CT1 418C MBRB20100CT1

    Untitled

    Abstract: No abstract text available
    Text: Platinum DRAGON white with Chip Level Conversion CLC Lead (Pb) Free Product - RoHS Compliant LW W5SN Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klarer Silikon - Verguss, Chip level conversion • Typischer Lichtfluss: 75 lm bei 700 mA


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    PDF

    b20100

    Abstract: MBR20100CTP b20100p B2010 diode device data on semiconductor
    Text: MBR20100CTP SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • • • • 20 Amps Total 10 Amps per Diode Leg Guardring for Stress Protection


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    PDF MBR20100CTP r14525 MBR20100CTP/D b20100 MBR20100CTP b20100p B2010 diode device data on semiconductor

    B2060T

    Abstract: MBRB2060CT MBRB2060CTT4 SMD310
    Text: MBRB2060CT Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package Employs the use of the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Package Designed for Power Surface Mount Applications


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    PDF MBRB2060CT r14525 MBRB2060CT/D B2060T MBRB2060CT MBRB2060CTT4 SMD310

    P0805

    Abstract: RTD SENSING CIRCUIT plc P1206 IEC62 CODE Welwyn IEC62 CODE p0603 IEC62 IEC751 Platinum Resistance Temperature sensor rtd platinum 100 sensor
    Text: Platinum Temperature Sensor Welwyn Components RTD Series • • • • • High stability Platinum based sensor High resolution, accuracy and interchangeability Compatible with automatic placement equipment Wide temperature range - very fast response time


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    PDF P0603 P0805 P1206 100ppm/ P1206­ 100RFI 3850ppm/ 100ppm/ 50ppm/ P0805 RTD SENSING CIRCUIT plc P1206 IEC62 CODE Welwyn IEC62 CODE p0603 IEC62 IEC751 Platinum Resistance Temperature sensor rtd platinum 100 sensor

    B1645

    Abstract: B-1645 B1635 MBR1645 B1635 transistor MBR1635 D 304 x
    Text: MBR1635, MBR1645 MBR1645 is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage


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    PDF MBR1635, MBR1645 MBR1645 B1635, B1645 r14525 MBR1635/D B1645 B-1645 B1635 B1635 transistor MBR1635 D 304 x

    MBR4045PT

    Abstract: B4045 800TC Diode MBR4045PT
    Text: MBR4045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    PDF MBR4045PT r14525 MBR4045PT/D MBR4045PT B4045 800TC Diode MBR4045PT

    MBRP20030CTL

    Abstract: b2003
    Text: MOTOROLA Order this document by MBRP20030CTL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MBRP20030CTL POWERTAP II SWITCHMODE Power Rectifier Motorola Preferred Device The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following


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    PDF MBRP20030CTL/D MBRP20030CTL MBRP20030CTL b2003

    mbr2506

    Abstract: MBR25060V
    Text: MOTOROLA Order this document by MBR25060V/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBR25060V SWITCHMODE S ch o ttky Pow er R e c tifie r . . . using the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features:


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    PDF MBR25060V/D E69369 mbr2506 MBR25060V

    K2404

    Abstract: No abstract text available
    Text: H-IIF Series • Heavy metal Platinum: Pt introduced for lifetime control • Higher-speed diode built-in • High breakdown tolerance (high dv/dt) H H: High-Voltage Power MOSFET II: Series (Generation) F: FRD (Fast Recovery Diode) built-in H-IIF Series Built-in Diode trr and Breakdown Tolerance


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    PDF 2SJ458/2SK 60V/500 K2404

    ampal16r8l

    Abstract: 16H8 AMPAL16R4L AMPAL16L8A/BSA AmPAL16L8L
    Text: AmPAL16R8 Fam ily 20-Pin IMOX Programmable Array Logic PAL Elements Distinctive Characteristics • AMD's superior IMOX technology - Guarantees tpo = 15 ns Max. "B " Versions • High-Speed, Half-Power ("A L") and Quarter-Power ("Q ") versions • Platinum-silicide fuses and added test words ensure


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    PDF AmPAL16R8 20-Pin KS000010 L16R8 ampal16r8l 16H8 AMPAL16R4L AMPAL16L8A/BSA AmPAL16L8L

    Untitled

    Abstract: No abstract text available
    Text: Gigohm Wraparound Surface Mount CHIP RESISTORS FEATURES • R esistan ce values to 1 x 1012£2 • 96% Alumina substrate • Wraparound platinum silver PtAg terminations • HCC-0805-XXXX-X: PtAg term inations with 62/36/2 solder coating for superior solder attachm ent.


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    PDF HCC-0805-XXXX-X: HC3-0805-XXXX-X: HCC-Q805-IT00P

    Untitled

    Abstract: No abstract text available
    Text: Am27Sl2/13 a 2,048-Bit 512 x 4 Bipolar PROM > 3 DISTINCTIVE CHARACTERISTICS ro •«j • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • Low-current PNP inputs High-current open-collector and three-state outputs


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    PDF Am27Sl2/13 048-Bit Am27S12/13 Am27S12 Am27S13 BD006400 Am27S12A Am27S13A

    ecl pal 16 macrocells

    Abstract: HD b3c
    Text: AmPAL*10H20EG8/AmPAL10020EG8 IMOX-III ECL Programmable Array Logic PRELIMINARY Asynchronous-RESET and PRESET capability Power-up RESET capability PRELOAD for improved testability Special designed-ln test features for full AC and DC testing Platinum-silicide fuses ensure high programming yield,


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    PDF 10H20EG8/AmPAL10020EG8 0H20EV8 AmPAL10020EV8 6176A) ZL30A AmPAL10H20EG8/AmPAL10020EG8 ecl pal 16 macrocells HD b3c

    27s21

    Abstract: AMD 27S21 AM27S21 21A1
    Text: Am27S21 /27S21A AdvaMcro 1,024-Bit 256x4 Bipolar PROM Devices DISTIN CTIVE CH ARA CTERISTICS • • • • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield Low-current PNP inputs High-current open-collector and three-state outputs


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    PDF Am27S21 /27S21A 024-Bit 256x4) Am27S21/27S21 Am27S25/27S25A/27S25SA 27s21 AMD 27S21 21A1

    Untitled

    Abstract: No abstract text available
    Text: Gigohm Wraparound Surface Mount CHIP RESISTORS IMS FEATURES • 1,200,000,000 to 1,000,000,000,000 Q thick film chip resistors • 96% Alumina substrate • W raparound platinum silver PtAg terminations • HCC-0805-XXXX-X: PtAg term inations with 62/36/2 solder


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    PDF HCC-0805-XXXX-X: HC3-0805-XXXX-X: HCC-0805-IT00P 464T23b