tsop32 8x20
Abstract: TSOP32 Package M29F040 PLCC32 QR124 TSOP32 m29F040 micron
Text: QUALIFICATION REPORT M29F040 T6-U20: 4 Mb x8 FLASH MEMORY in PLCC32 and TSOP32, AGRATE R1 DIFFUSION LINE INTRODUCTION The M29F040 is a 4 Mb Single Supply (5V) Flash memory organized as 512K bytes of 8 bits each. It is offered in PLCC32 and TSOP32 packages. It can be programmed and erased in-system or in standard
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M29F040
T6-U20:
PLCC32
TSOP32,
TSOP32
T6-U20
tsop32 8x20
TSOP32 Package
QR124
m29F040 micron
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PDF
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TSOP32 Package
Abstract: TSOP32 M29W040 PLCC32 QR125
Text: QUALIFICATION REPORT M29W040 T6-U10: 4 Mb x8 FLASH MEMORY in PLCC32 and TSOP32 INTRODUCTION The M29W040 is a 4 Mb Single Supply (2.7V to 3.6V) Flash memory organized as 512K bytes of 8 bits each. It is offered in PLCC32 and TSOP32 packages. It can be programmed and erased in-system or in
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M29W040
T6-U10:
PLCC32
TSOP32
TSOP32
T6-U10
100ns
TSOP32 Package
QR125
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PDF
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QR114
Abstract: CDIP32 tsop32 8x20 TSOP32 Package M29F040 PLCC32 TSOP32 PLCC32 package
Text: QUALIFICATION REPORT M29F040 T6-U10: 4 Megabit x8 SINGLE SUPPLY FLASH MEMORY in PLCC32 and TSOP32 INTRODUCTION The M29F040 is a 4 Megabit Single Voltage (5V) FLASH Memory organized as 512K bytes of 8 bits each. It is offered in PLCC32 and TSOP32 packages. It can be programmed and erased in-system or in standard
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Original
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M29F040
T6-U10:
PLCC32
TSOP32
TSOP32
T6-U10
QR114
CDIP32
tsop32 8x20
TSOP32 Package
PLCC32 package
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PDF
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M28F512
Abstract: PLCC32
Text: QUALIFICATION REPORT M28F512 512K 64K x 8 CMOS T5-U20 FLASH MEMORY in PLCC32 INTRODUCTION The M28F512 is a 512K FLASH Memory organised as 64K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been especially developed
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M28F512
T5-U20
PLCC32
T5-U20
100ns
PLCC32
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PDF
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T5-U20
Abstract: No abstract text available
Text: QUALIFICATION REPORT M28F512 512K 64K x 8 CMOS T5-U20 FLASH MEMORY in PLCC32 INTRODUCTION The M28F512 is a 512K FLASH Memory organised as 64K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been especially developed
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M28F512
T5-U20
PLCC32
T5-U20
100ns
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PDF
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256k x8 SRAM 5V
Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Text: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)
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M27C64A
M27C256B
M87C257
M27C512
M27C1001*
M27C1024*
M27C2001*
M27C405*
M27C4001
M27C4002
256k x8 SRAM 5V
ST95080
rom 1K x8
mod 10 asynchronous
ST1335
M28V210
M6280
3.3 -35Y
M48Z09
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PDF
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Untitled
Abstract: No abstract text available
Text: 512K TO 2M FLASH W29 SERIES • 1M PAGE MODE FLASH REQUIRING +5V ONLY FOR PROGRAM AND ERASE, NO +12V VPP, WITH LOWER CURRENT CONSUMPTION THAN COMPARABLE FLASH MEMORY PARTS • UP TO 10,000 READ/WRITE CYCLES, DATA PROTECTION AND 10 YEAR DATA RETENTION FOR W29
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W29EE512P-12
W29EE011P-12
W29C020P-70
W29C020T-70
64Kx8
128Kx8
256Kx8
PLCC32
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PDF
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plcc32 pinout
Abstract: TSOP32 M29W040 PLCC32
Text: M29W040 4 Mb 512K x 8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical – Chip: 2.5 sec typical
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M29W040
100ns
12MHz)
29W040
PLCC32
120ns
150ns
TSOP32
200ns
plcc32 pinout
TSOP32
M29W040
PLCC32
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PDF
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M27W401
Abstract: PDIP32 PLCC32 TSOP32
Text: M27W401 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 2.7V to 3.6V FAST ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V LOW POWER CONSUMPTION: – Active Current 15mA – Standby Current 20µA
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M27W401
512Kb
48sec.
M27W401
vol401
FDIP32W
PDIP32
PLCC32
PDIP32
PLCC32
TSOP32
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PDF
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M28F512
Abstract: PDIP32 PLCC32
Text: M28F512 512K 64K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max
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M28F512
M28F512
PDIP32
100ns
120ns
150ns
200ns
AI00549
PDIP32
PLCC32
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PDF
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Untitled
Abstract: No abstract text available
Text: M27V405 4 Mbit 512Kb x 8 Low Voltage OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION: – Active Current 15mA – Standby Current 20µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIMES: – Typical 48sec. (PRESTO II Algorithm)
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M27V405
512Kb
120ns
48sec.
27sec.
M27V405
150ns
180ns
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PDF
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TSOP32
Abstract: TSOP32 Package M27C405 PDIP32 PLCC32
Text: M27C405 4 Mbit 512Kb x 8 OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION PIN COMPATIBLE with the 4 Mbit, SINGLE VOLTAGE FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA
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M27C405
512Kb
48sec.
27sec.
M27C405
AI01603
AI01602
AI01604
TSOP32
TSOP32 Package
PDIP32
PLCC32
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PDF
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plcc32 pinout
Abstract: No abstract text available
Text: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Sector: 1.0 sec typical – Bulk: 2.5 sec typical
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M29F040
12MHz)
PLCC32
TSOP32
M29F040
120ns
150ns
AI01379
PLCC32
plcc32 pinout
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PDF
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AI01378
Abstract: M29F040 PLCC32 TSOP32 B29F040 512k x 8 chip block diagram plcc32 pinout
Text: M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical
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M29F040
12MHz)
PLCC32
TSOP32
120ns
150ns
AI01378
M29F040
PLCC32
TSOP32
B29F040
512k x 8 chip block diagram
plcc32 pinout
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PDF
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M29F040
Abstract: PLCC32 plcc32 pinout TSOP32 B29F040
Text: M29F040 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical
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M29F040
512Kb
12MHz)
PLCC32
TSOP32
120ns
150ns
M29F040
PLCC32
plcc32 pinout
TSOP32
B29F040
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PDF
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plcc32 pinout
Abstract: TSOP32 Package
Text: M29W040 VERY LOW VOLTAGE SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 100ns 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Sector: 1.5 sec typical
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M29W040
100ns
12MHz)
M29W040
120ns
150ns
200ns
AI01827B
plcc32 pinout
TSOP32 Package
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PDF
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M27C4001
Abstract: SGS-Thomson e-prom, M27C4001 PDIP32 PLCC32 TSOP32 M27C4001G
Text: M27C4001 4 Mbit 512Kb x 8 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIMES of AROUND 48sec.
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M27C4001
512Kb
48sec.
FDIP32W
PDIP32
TSOP32
PLCC32
M27C4001
SGS-Thomson e-prom, M27C4001
PDIP32
PLCC32
TSOP32
M27C4001G
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PDF
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TSOP32
Abstract: plcc32 pinout TSOP32 Package M29W040 PLCC32 TSOP-32
Text: M29W040 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical
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M29W040
512Kb
100ns
12MHz)
PLCC32
120ns
150ns
TSOP32
200ns
TSOP32
plcc32 pinout
TSOP32 Package
M29W040
PLCC32
TSOP-32
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PDF
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M27V201
Abstract: M27V401 PDIP32 PLCC32 TSOP32
Text: M27V401 4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM DATA BRIEFING • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION: – Active Current 15mA at 5MHz 32 32 – Standby Current 20µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V
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M27V401
512Kb
120ns
FDIP32W
PDIP32
M27V401
M27V201
PDIP32
PLCC32
TSOP32
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PDF
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M27C4001
Abstract: SGS-Thomson e-prom, M27C4001 SGS-Thomson m27c4001 PDIP32 TSOP32 Package PLCC32 TSOP32 41h32
Text: M27C4001 4 Mbit 512Kb x 8 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIMES of AROUND 48sec.
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M27C4001
512Kb
48sec.
FDIP32W
LCCC32W
PDIP32
M27C4001
SGS-Thomson e-prom, M27C4001
SGS-Thomson m27c4001
PDIP32
TSOP32 Package
PLCC32
TSOP32
41h32
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PDF
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Untitled
Abstract: No abstract text available
Text: M27W401 4 Mbit 512Kb x 8 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST READ ACCESS TIME: - 70ns at V cc = 3.0V to 3.6V - 80ns at V cc = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C4001 ■ LOW POWER CONSUMPTION: PLCC32 (K) TSOP32 (N)
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OCR Scan
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M27W401
512Kb
M27C4001
PLCC32
TSOP32
200mA
M27W401
TSOP32
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PDF
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M28F512
Abstract: No abstract text available
Text: rZ 7 SCS-THOMSON M28F512 512K 64K x 8, Bulk Erase FLASH MEMORY DATA B RIEFING • ■ ■ ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10ns typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION
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OCR Scan
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M28F512
PDIP32
PLCC32
M28F512
100ns
120ns
150ns
200ns
I00549
PDIP32
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PDF
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Untitled
Abstract: No abstract text available
Text: Æ T S C S -THOMSON * 7 #. ÜO g^(& l^(gWiQ(gi M29W040 4 Mb (512K x 8, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ BYTE PROGRAMMING TIME: 12jjs typical
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OCR Scan
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M29W040
100ns
12jjs
12MHz)
100ns
120ns
150ns
200ns
PLCC32
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PDF
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mm29f040
Abstract: No abstract text available
Text: SGS-THOMSON M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10jis typical ERASE TIME - Block: 1.0 sec typical - Chip: 2.5 sec typical
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OCR Scan
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M29F040
10jis
12MHz)
PLCC32
M29F040
PLCC32
TSOP32
mm29f040
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PDF
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