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    PM4550 Search Results

    PM4550 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PM45502C Hitachi Semiconductor Silicon N-Channel Power MOS FET Module Original PDF
    PM45502C Renesas Technology Silicon N-Channel Power MOS FET Module Original PDF
    PM45502C Hitachi Semiconductor Power Transistors Data Book Scan PDF
    PM45502C Unknown Catalog Scans - Shortform Datasheet Scan PDF
    PM45502C Unknown FET Data Book Scan PDF
    PM4550C Unknown FET Data Book Scan PDF
    PM4550J Hitachi Semiconductor Mosfet Guide Original PDF
    PM4550J Hitachi Semiconductor Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Original PDF
    PM4550J Renesas Technology Silicon N-Channel Power MOS FET Module Original PDF
    PM4550J Hitachi Semiconductor Power Transistors Data Book Scan PDF
    PM4550J Unknown Catalog Scans - Shortform Datasheet Scan PDF
    PM4550J Unknown Power and Industrial Semiconductors Data Book Scan PDF
    PM4550J Unknown FET Data Book Scan PDF
    PM4550N Unknown FET Data Book Scan PDF

    PM4550 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PM45502C hitachi

    Abstract: PM45502C Hitachi DSA00309
    Text: PM45502C Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    Original     		PM45502C PM45502C hitachi PM45502C Hitachi DSA00309 PDF

    PM5050J

    Abstract: PM4550J
    Text: PM4550J Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features • • • • • • • • Pin Arrangement Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    Original     		PM4550J PM5050J PM4550J PDF

    Hitachi DSA001652

    Abstract: No abstract text available
    Text: PM4550J Silicon N-Channel Power MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    Original     		PM4550J D-85622 Hitachi DSA001652 PDF

    0416C

    Abstract: PM45502C PM50502C Hitachi DSA0015 PM45502C hitachi
    Text: PM45502C Silicon N-Channel Power MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    Original     		PM45502C D-85622 0416C PM45502C PM50502C Hitachi DSA0015 PM45502C hitachi PDF

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent PDF

    2SK2225

    Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
    Text: CONTENTS • Index. 4 ■ General Information.


    Original     		PM50150K 31Max 2SK2225 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent PDF

    hitachi j50

    Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		D-85622 hitachi j50 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent PDF

    PM5050J

    Abstract: Hitachi DSA001652
    Text: PM5050J Silicon N-Channel Power MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    Original     		PM5050J D-85622 PM5050J Hitachi DSA001652 PDF

    Untitled

    Abstract: No abstract text available
    Text: PM4550J Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain


    OCR Scan     		PM4550J D-85622 PDF

    Untitled

    Abstract: No abstract text available
    Text: PM4550J Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Sw itching Features • • • • • • • • Equipped with Power M OS FET L ow on-resistance High speed switching Low drive current W ide area o f safe operation Inherent parallel diode between source and drain


    OCR Scan     		PM4550J PDF

    Untitled

    Abstract: No abstract text available
    Text: PM45502C Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain


    OCR Scan     		PM45502C D-85622 PDF

    pm4550c

    Abstract: PM4550CSILICON
    Text: HIT ACHI/-LOPTOELECTRONICS} 73 4496205 H I T A C H I / OPTOELECTRONICS ' DE I 4 4 ^ 2 0 5 73C 10133 PM4550C-SILICON N-CHANNEL MOS FET MODULE i(7), D T-3^-/5 54Í0.5 54±0.5 D2 HIGH SPEED POWER SW ITCHING S2 DD1G133 D1 X7). SI St§ • FEATURES -sii- •


    OCR Scan     		DD1G133 PM4550CSILICON 4T3-96205 GniG13b pm4550c PDF

    diode 2JC

    Abstract: 4S125
    Text: fcilE T> m 4ltclhEDS DD13t>53 75b « H i m PM4550N- Preliminary HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING • FEATURES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching


    OCR Scan     		DD13t PM4550N---------------HITACHI/ diode 2JC 4S125 PDF

    PM45502C

    Abstract: HITACHI PM45502C pm4550
    Text: HITACHI PM45502C S IL IC O N N -CH AN N EL P O W E R MOS FET M O D ULE H IG H S P E E D P O W E R S W IT C H IN G • FEATU RES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching • Low Drive Current • Wide Area of Safe Operation


    OCR Scan     		PM45502C 80DY-0RAIN PM45S02C PM45502C HITACHI PM45502C pm4550 PDF

    PF0020

    Abstract: PM4550C PU7456 TPM relay
    Text: - 162 - f Ü € tt m € & m SS * * H 1 K I* YGS* V * ft M A (V) & * (X P d /P c h (A) * PF0015 H Ä 824— 849MHz PA MOS 12 DD 2 D PF0016 B aL 8 9 0 - 9 1 5 M H z PA MOS 12 DD 2 D PF0017 B aL 872— 905MHz PA MOS 12 DD 2 D PF0020 B aL 820— 850MHz PA


    OCR Scan     		PDF

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212 PDF

    2SK975 equivalent

    Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC


    OCR Scan     		2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44 PDF

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


    OCR Scan     		O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297 PDF

    hitachi mosfet power amplifier audio application

    Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
    Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3


    OCR Scan     		RE79-24 hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56 PDF

    2SH14

    Abstract: 2SH21 2SH11 2SH19 2SK1056 6AM13 4AK19
    Text: POWER MOS FET •G eneral amplifier Package code Type No. -tas 2SK1197 TO-3P 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 to Ratings Vos* j 10 Vosx (V)| «A) 100 1 0.5 -7 -120 -7 -140 -7 -160 -8 -180 -200 ! -8 Characteristics Mai ResfO» Ciss Status (S itili. <PF)«W>


    OCR Scan     		2SK1197 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 2SK1056 2SK1087 2SK1058 2SK2220 2SH14 2SH21 2SH11 2SH19 6AM13 4AK19 PDF

    2SK2225 equivalent

    Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}


    OCR Scan     		2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1156 2SK1313 2SK1314 2SK1540 2SK1541 2SK2225 equivalent 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent PDF

    "MOSFET Modules"

    Abstract: MOSFET Modules power mosfet 500 A PM45502C PM50302F MOSFET 450 1060 fet PM4550J PM4575J PM50100K
    Text: HITACHI 16 1.7 Power MOSFET Modules module type . These devices incorporate high speed source / drain diodes. Hitachi has developed two m odule packages, each incorporating two independent pow er MOSFETs with channel power dissipations of 200W or 300W per FET chip depending on the


    OCR Scan     		PM45302F PM50302F PM45502C PM50502C PM4550J PM5050J PM4575J "MOSFET Modules" MOSFET Modules power mosfet 500 A PM45502C PM50302F MOSFET 450 1060 fet PM4550J PM50100K PDF

    2SJ177

    Abstract: 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
    Text: Index P-Channel 2SJ Series 2SJ76. 149 2SJ77. 149


    OCR Scan     		2SJ76. 2SJ77. 2SJ78 2SJ79. 2SJ13( HAT1032T. HATI033T. HAT2031T. HAT2037T. 2SJ177 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294 PDF