PMFPB6545UP Search Results

PMFPB6545UP Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PMFPB6545UP		NXP Semiconductors	20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combination		Original	PDF
PMFPB6545UP,115		NXP Semiconductors	PMFPB6545UP - 20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combination, SOT1118 Package, Standard Marking, Reel Pack, SMD		Original	PDF

PMFPB6545UP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TRANSISTOR SMD MARKING CODE MV DIODE Abstract: No abstract text available Text: ' 1 PMFPB6545UP 20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combination Rev. 2 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)	Original	PMFPB6545UP DFN2020-6 OT1118) TRANSISTOR SMD MARKING CODE MV DIODE	PDF
MOSFET TRANSISTOR SMD MARKING CODE A1 Abstract: MOSFET TRANSISTOR SMD MARKING A1 MOSFET TRANSISTOR SMD MARKING CODE 11 PMFPB6545 smd transistor marking y1 Text: PMFPB6545UP 20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combination Rev. 1 — 8 March 2011 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)	Original	PMFPB6545UP OT1118 MOSFET TRANSISTOR SMD MARKING CODE A1 MOSFET TRANSISTOR SMD MARKING A1 MOSFET TRANSISTOR SMD MARKING CODE 11 PMFPB6545 smd transistor marking y1	PDF
NX3008NBKMB Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS Text: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety	Original	OT223 DFN1006B-3, AEC-Q101 Q3/2012 NX3008NBKMB BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS	PDF
tea1719 Abstract: PH1930 nds 3 video guard smart card OPTOCOUPLER SMPS for HDD ph1930al PH2530AL ip4223 SMD 8A TRANSISTOR 702 transistor smd code PH6030AL Text: Application Guide Notebook Computing Introduction Your partner for notebook computing Designing notebooks isn’t getting any easier. The footprint continues to shrink, and consumers continue to demand more features, faster speeds, on our decades-long leadership in high-performance mixed-signal solutions,	Original		PDF
p-channel mosfet with diode sot89 Abstract: PMFPB6532 PMFPB6545 AEC-Q101-qualified PMEG30 MOSFET455 PBSS304PX PMEG3020CPA PMEG4010CPA PMEG2020CPA Text: NXP leadless, 2 x 2 mm SOT1061 and SOT1118 packages Fit more functions on a PCB with small, thin medium-power packages These leadless, medium-power SMD packages measure only 2 x 2 x 0.65 mm and provide excellent electrical and thermal performance. They enable high integration for a range of	Original	OT1061 OT1118 OT1061) OT1118) ap6545UP PMFPB6532UP p-channel mosfet with diode sot89 PMFPB6532 PMFPB6545 AEC-Q101-qualified PMEG30 MOSFET455 PBSS304PX PMEG3020CPA PMEG4010CPA PMEG2020CPA	PDF
TRANSISTOR S1A 64 smd Abstract: SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030 Text: Discrete Semiconductors Selection Guide 2010 Diodes, transistors, ESD and signal conditioning devices Excellence in portfolio and performance Diodes Introducing new package technology Page 7 Portable and increasingly smaller end products fuel the race towards more sophisticated functionality in smaller form	Original	OT1061 OT1118 PSSI2021SAY PTVS10VP1UP TRANSISTOR S1A 64 smd SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030	PDF
Untitled Abstract: No abstract text available Text: AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Rev. 2 — 23 June 2011 Application note Document information Info Content Keywords BISS, MOSFET-Schottky, low VCEsat, battery charger, Li-Ion battery	Original	AN10910	PDF
2N7002 NXP MARKING Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF Text: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and	Original	OD323 SC-76) OD882D OD882 OD123F 2N7002 NXP MARKING TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF	PDF
transistor bjt 331 Abstract: 12v dc to dc mobile charger circuit YDT1591-2006 PMV65XP Drive Base BJT AN10753 prtr5v0 DOUBLE FET PBSS304PX PCF50603 Text: AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Rev. 01 — 28 April 2010 Application note Document information Info Content Keywords BISS, Battery charger, Li-Ion battery Li-polymer battery , overvoltage	Original	AN10910 AN10910 transistor bjt 331 12v dc to dc mobile charger circuit YDT1591-2006 PMV65XP Drive Base BJT AN10753 prtr5v0 DOUBLE FET PBSS304PX PCF50603	PDF