pnp 200v 5a switching characteristics
Abstract: pnp 200v 2SA1250 200v 5a transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1250 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= -1.0V(Max.)@ IC= -5A APPLICATIONS ·Designed for general-purpose power switching applications.
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2SA1250
-200V
-10mA;
-200V;
pnp 200v 5a switching characteristics
pnp 200v
2SA1250
200v 5a transistor
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ZTX956
Abstract: DSA003780
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -770 -900 mV IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio
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ZTX956
-100mA,
50MHz
-100mA
100mA,
-10mA,
100ms
ZTX956
DSA003780
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Untitled
Abstract: No abstract text available
Text: , U na. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1250 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) • Low Collector Saturatioin Voltage.)= -1.0V(Max.)@ lc= -5A
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2SA1250
-200V
-10mA;
-200V;
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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2SC2607
Abstract: 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.
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2SA1116
-200V
2SC2607
-50mA;
-200V;
2SC2607
2SA1116
pnp 200v 5a switching characteristics
pnp 200v 5a switching times
2SA1116 equivalent
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2SC2607
Abstract: 2SA1116 pnp 200v 5a switching times 2SA1116 equivalent 200v 5a transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.
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2SA1116
-200V
2SC2607
-50mA;
-200V;
2SC2607
2SA1116
pnp 200v 5a switching times
2SA1116 equivalent
200v 5a transistor
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2SC3857
Abstract: 2SA1493
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1493 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3857 APPLICATIONS ·For audio and general purpose applications
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2SA1493
-200V
2SC3857
-200V;
2SC3857
2SA1493
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2SA1250
Abstract: No abstract text available
Text: JMnic Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・High breadown voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications PINNING see Fig.2 PIN
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2SA1250
-10mA
2SA1250
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2SA1250
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·High breadown voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING see Fig.2
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2SA1250
-10mA
2SA1250
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2SA1250
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·High breadown voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING see Fig.2
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2SA1250
-10mA
2SA1250
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2SC2607
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1116 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation
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2SA1116
-200V
2SC2607
-50mA;
-200V;
2SC2607
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2SA1493
Abstract: pnp 200v 5a switching characteristics 2SC3857
Text: Inchange Semiconductor Product Specification 2SA1493 Silicon PNP Power Transistors • DESCRIPTION ·With MT-200 package ·Complement to type 2SC3857 APPLICATIONS ·Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to
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2SA1493
MT-200
2SC3857
MT-200)
2SA1493
pnp 200v 5a switching characteristics
2SC3857
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2SA1493
Abstract: 2SC3857
Text: SavantIC Semiconductor Product Specification 2SA1493 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SC3857 APPLICATIONS ·Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base
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2SA1493
MT-200
2SC3857
MT-200)
2SA1493
2SC3857
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2SA1493
Abstract: 2SC3857
Text: JMnic Product Specification 2SA1493 Silicon PNP Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SC3857 APPLICATIONS ・Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base
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2SA1493
MT-200
2SC3857
MT-200)
2SA1493
2SC3857
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2SC3857
Abstract: 2SA1493 MT20
Text: 2SA1493 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3857 –200 VCBO •Electrical Characteristics Conditions V ICBO VCB=–200V –100max VEB=–6V –100max µA IC=–50mA –200min V 2SA1493 Unit –200 V IEBO VEBO –6 V V(BR)CEO IC
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2SA1493
2SC3857)
MT-200
100max
200min
50min
20typ
2SC3857
2SA1493
MT20
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ISSUE 3 JUNE 94 FEATURES * 2 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 2 Amps * Spice model available C B E E-Line
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ZTX956
100ms
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2SA1493
Abstract: 2SC3857 DSA0016503
Text: 2SA1493 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3857 –200 VCBO •Electrical Characteristics Conditions Ratings Unit V ICBO VCB=–200V –100max µA VEB=–6V –100max µA IC=–50mA –200min V VCEO –200 V IEBO VEBO –6 V V(BR)CEO
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2SA1493
2SC3857)
MT-200
100max
200min
50min
20typ
400typ
2SA1493
2SC3857
DSA0016503
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NPN triple diffused 60V
Abstract: 2N2658 JAN2N2880 JAN2N3749 JAN2N3996 JAN2N3999 SDT9001 SDT9012
Text: -JGlitron ÄTM >© MEDIUM TO HIGH VOLTAGE, FAST SWITCHING Devices, Inc. NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 84 CHIP NUM BER cf] CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)
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203mm)
NPN triple diffused 60V
2N2658
JAN2N2880
JAN2N3749
JAN2N3996
JAN2N3999
SDT9001
SDT9012
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300pF
Abstract: NPN triple diffused 60V 2N4070 2N4071 JAN2N4150 JAN2N5237 JAN2N5238 SDT7601 SDT7618 SDT7A05
Text: ^olîtran Devices. Inc Ä ¥ M ,© MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 85 CHIP NUMBER dfl CONTACT METALLIZATION Base and emitter: > 30,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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203mm)
300pF
NPN triple diffused 60V
2N4070
2N4071
JAN2N4150
JAN2N5237
JAN2N5238
SDT7601
SDT7618
SDT7A05
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JAN2N
Abstract: No abstract text available
Text: Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPIM EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* FORMERLY 84 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilv er" also available)
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203mm)
0-19mm)
JAN2N2880,
JAN2N3749,
JAN2N3996
JAN2N3999,
2N2658,
SDT9001
SDT9012
JAN2N
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Untitled
Abstract: No abstract text available
Text: 8368602 SOLITRON DEVICES INC ~TS 95D 02 86 3 D 3 3 - t / - DE|fl3bôb02 OOOEflk.3 E | Devices. Inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 85 CHIP NUMBER CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum
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203mm)
33-/l
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Untitled
Abstract: No abstract text available
Text: FZT955 FZT956 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995_ FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps
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FZT955
FZT956
OT223
FZT955
FZT855
FZT956
-100mA,
50MHz
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PNP TRANSISTOR 0.1A 60V
Abstract: 2n2658 Solitron
Text: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC _9 5 D S0LITR0N DEVICES INC "TS 02861 D T ~~2S~- DF|fl3bflbDa DDDEflbl M [o [y]©Tr ©ättäil < M EDIUM TO HIGH VOLTAGE, FAST SWITCHING IJ'ëEÊùi'oa Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* FORMERLY 84)
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SDT7601
Abstract: No abstract text available
Text: 8 3 6 8 6 0 2 SO L IT RO N D E V I C E S ELEMENT NUMBER flb INC 86 D 0 2 5 7 5 dF | fl3hfib02 0 0D 5 S7 S fi |~_ 185 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 3 0 .0 0 0 A Aluminum
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fl3hfib02
203mm)
40MHz
40MHz
300pF
SDT7601
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