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    PNP 586 Search Results

    PNP 586 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    PNP 586 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SHD419205 PNP SHD419305 NPN SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 647, REV. A Complementary Bi-Polar Power Transistors NPN / PNP Designed for use as high-frequency drivers in audio amplifiers. SHD419205S PNP / SHD419305S (NPN) - S-100 (JANTX) Screening


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    PDF SHD419205 SHD419305 SHD419205S SHD419305S S-100 150Vdc

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort PNP General Purpose Transistors MMBT3904WT1 NPN and PNP Silicon NPN MMBT3906WT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.


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    PDF 323/SC MMBT3904WT1 MMBT3906WT1 MMBT3906WT1

    transistor marking wt

    Abstract: motorola application note AN-569 modes of operation of transistor BC177 BC237 hie for bc547b 2N2222 MPS2222 npn transistor BC547 collector characteristic curve 2n3819 equivalent transistor MOTOROLA TRANSISTOR 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors COLLECTOR 3 NPN MPS6521* PNP MPS6523 2 BASE 1 EMITTER COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage


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    PDF MPS6521* MPS6523 MPS6521 MPS6523 CAS218A MSC1621T1 MSC2404 MSD1819A transistor marking wt motorola application note AN-569 modes of operation of transistor BC177 BC237 hie for bc547b 2N2222 MPS2222 npn transistor BC547 collector characteristic curve 2n3819 equivalent transistor MOTOROLA TRANSISTOR 2N3819

    2n5401 equivalent

    Abstract: transistor equivalent of 2N5401 transistor equivalent for 2N5401
    Text: SENSITRON SEMICONDUCTOR SHD431008 TECHNICAL DATA DATA SHEET 2040,REV. - SMALL SIGNAL TRANSISTOR - PNP Electrically Equivalent to 2N5401 DESCRIPTION: A SINGLE PNP SMALL SIGNAL TRANSISTOR IN A CERAMIC LCC-3 PACKAGE. MAXIMUM RATINGS RATING (ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED).


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    PDF SHD431008 2N5401) 2n5401 equivalent transistor equivalent of 2N5401 transistor equivalent for 2N5401

    Untitled

    Abstract: No abstract text available
    Text: SHD430001Q SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 917, REV. - QUAD PNP SMALL SIGNAL TRANSISTOR DESCRIPTION: PNP QUAD SMALL SIGNAL TRANSISTORS 2N2907 IN A CERAMIC LCC-28T PACKAGE MAXIMUM RATINGS RATING (ALL RATINGS ARE @ TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR)


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    PDF SHD430001Q 2N2907) LCC-28T

    shd4341

    Abstract: No abstract text available
    Text: SHD434001 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 399, REV. – Formerly part number SHD4341 PNP QUAD SMALL SIGNAL TRANSISTOR DESCRIPTION: PNP QUAD SMALL SIGNAL TRANSISTORS IN A CERAMIC DIP PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE @ TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR


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    PDF SHD4341 SHD434001 shd4341

    mje3055T data

    Abstract: No abstract text available
    Text: ON Semiconductor PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general−purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes


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    PDF MJE2955T MJE3055T MJE3055T mje3055T data

    Untitled

    Abstract: No abstract text available
    Text: SHD431002 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 646, REV. A PNP SWITCHING TRANSISTOR SHD431002S - S-100 JANTX Screening • Hermetic, Ceramic Package • Electrically Equivalent to MMBT3640 • Surface Mount Package Absolute Maximum Ratings*


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    PDF SHD431002 SHD431002S S-100 MMBT3640

    Untitled

    Abstract: No abstract text available
    Text: SHD431006 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 678, REV. - PNP SWITCHING TRANSISTOR SHD431006S - S-100 JANTX Screening • Hermetic, Ceramic Package • Electrically Equivalent to 2N3906 • Surface Mount Package Absolute Maximum Ratings* Symbol


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    PDF SHD431006 SHD431006S S-100 2N3906

    shd4304

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD430204 TECHNICAL DATA DATA SHEET 1079, REV. Formerly part number SHD4304 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 • Surface Mount Package Absolute Maximum Ratings* Symbol


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    PDF SHD4304 SHD430204 2N6193 shd4304

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD419203 TECHNICAL DATA DATA SHEET 945, REV. A Formerly part number SHD4193 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N3741 • Surface Mount Package Absolute Maximum Ratings* Symbol


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    PDF SHD4193 SHD419203 2N3741

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD419204 TECHNICAL DATA DATA SHEET 1078, REV A. Formerly part number SHD4194 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 • Surface Mount Package Absolute Maximum Ratings* Symbol


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    PDF SHD4194 SHD419204 2N6193

    shd4303

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD430203 TECHNICAL DATA DATA SHEET 937, REV. A Formerly part number SHD4303 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N3741 • Surface Mount Package Absolute Maximum Ratings* Symbol


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    PDF SHD4303 SHD430203 2N3741 shd4303

    TRANSISTOR BC 448 smd

    Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors


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    PDF BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A

    K1 transistor

    Abstract: pnp vhf transistor
    Text: 25C D • 523SbQS QDQMS3‘i 4 WiSIZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 236 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,


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    PDF 523SbQS BF767 Q62702-F553 K1 transistor pnp vhf transistor

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


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    PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    BFP96

    Abstract: BFQ32C
    Text: Product specification Philips Semiconductors 'P3/'23 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D BFQ32C 7 1 1 0 0 2 b 0 0 4 5 4 2 4 03b • P H I N PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT 173X


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    PDF BFP96. BFQ32C BFP96 BFQ32C

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


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    PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700

    nf950

    Abstract: transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF
    Text: 25C D • 523SbQS QQQMS3‘i 4 Wi SI ZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 2 36 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,


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    PDF 023SbQS Q62702-F553 nf950 transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF

    2SA1586

    Abstract: A1586 2SC4116
    Text: 2SA1586 TO SH IBA 2 S A 1 586 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • • • High Voltage and High current : v CE0 = _ 50V, IC = - 150mA (Max.) Excellent hEE Linearity


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    PDF 2SA1586 150mA 2SC4116 125transportation 2SA1586 A1586

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1586 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 586 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • U nit in mm High Voltage and High current 2.1 ± 0.1 : Vc e o = —50V, I C = —150mA(Max.) • Excellent hpE Linearity


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    PDF 2SA1586 --50V, --150mA 2SC4116 961001E

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1586 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 586 AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • U nit in mm High Voltage and High current : V C E 0 = —50V, I C = - 1 5 0 m A (Max.) 2.1 ±0.1 1.2 5 ± 0.1


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    PDF 2SA1586 2SC4116 961001EAA2'

    marking IAY

    Abstract: 2SA1586 2SC4116 A1586 2SA158
    Text: TOSHIBA 2SA1586 2 S A 1 586 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High current : V c e O = - 50V, IC =-150m A (M ax.) Excellent hpE Linearity


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    PDF 2SA1586 -150m 2SC4116 961001EAA2' marking IAY 2SA1586 A1586 2SA158

    2SA1586

    Abstract: marking IAY 2SC4116 A1586 transistor marking bh ra
    Text: TOSHIBA 2SA1586 2 S A 1 586 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High current : v CE0 = _ 50V, IC = - 150mA (Max.) Excellent hEE Linearity : hpE dC = -0.1mA) / hFE (Ic = -2m A) = 0.95 (Typ.)


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    PDF 2SA1586 150mA 2SC4116 2SA1586 marking IAY A1586 transistor marking bh ra