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    PNP BC636 TRANSISTOR Search Results

    PNP BC636 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP BC636 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BC635

    Abstract: BC636 BC636-AP
    Text: BC636 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC636 BC636 TO-92 / Bulk BC636-AP BC636 TO-92 • ■ ■ / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY


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    BC636 BC636-AP BC635 BC635 BC636 BC636-AP PDF

    bc640

    Abstract: bc636 bc638
    Text: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 1 EMITTER Vdc –45 –60


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    BC636, BC636-16, BC638, BC640, BC640-16 BC636 BC638 BC640 PDF

    BC640

    Abstract: bc636 Diode bc640 BC636-16 BC636ZL1 BC638 BC638ZL1 BC640-16 BC640ZL1
    Text: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC636 BC638 BC640 Collector-Base Voltage VCBO BC636 BC638 BC640 Emitter-Base Voltage


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    BC636, BC636-16, BC638, BC640, BC640-16 BC636 BC638 BC640 BC640 bc636 Diode bc640 BC636-16 BC636ZL1 BC638 BC638ZL1 BC640-16 BC640ZL1 PDF

    bc640

    Abstract: BC638 BC636
    Text: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 Emitter-Base Voltage VCEO VCBO Value


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    BC636, BC636-16, BC638, BC640, BC640-16 BC636 BC638 BC640 PDF

    24825

    Abstract: BC639 BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC640
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640


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    M3D186 BC636; BC638; BC640 BC635, BC637 BC639. 24825 BC639 BC635 BC636 BC636-10 BC636-16 BC638 BC638-16 BC640 PDF

    bc640

    Abstract: BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC639 BC635 TRANSISTOR E C B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1997 Mar 07 1999 Apr 23 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640


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    M3D186 BC636; BC638; BC640 BC635, BC637 BC639. bc640 BC635 BC636 BC636-10 BC636-16 BC638 BC638-16 BC639 BC635 TRANSISTOR E C B PDF

    BC640

    Abstract: BC636 BC635 BC636-10 BC636-16 BC637 BC638 BC639 SC-43A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 2001 Oct 10 2004 Oct 11 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640


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    M3D186 BC636; BC638; BC640 BC635, BC637 BC639. BC640 BC636 BC635 BC636-10 BC636-16 BC638 BC639 SC-43A PDF

    transistor BC636

    Abstract: BC635 BC636 BC636BU BC636TA BC636TAR BC636TF BC636TFR
    Text: BC636 PNP Epitaxial Silicon Transistor BC636 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC635 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter


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    BC636 BC636 BC635 transistor BC636 BC635 BC636BU BC636TA BC636TAR BC636TF BC636TFR PDF

    BC640

    Abstract: bc636 bc638 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP
    Text: BC636/BC638/BC640 Transistor PNP TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features — High current transistors MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value Units -45 BC636


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    BC636/BC638/BC640 BC636 BC638 BC640 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP PDF

    BC636

    Abstract: BC638 BC640
    Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


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    BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC636 BC638 BC640 PDF

    BC635 ECB

    Abstract: BC638
    Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


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    BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC635 ECB BC638 PDF

    bc638 equivalent

    Abstract: bc640 equivalent bc636
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol BC636 BC638 BC640 Unit Collector – Emitter Voltage VCEO –45 –60 –80 Vdc Collector – Base Voltage


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    BC636 BC638 BC640 BC636 BC638 226AA) bc638 equivalent bc640 equivalent PDF

    bc640

    Abstract: Diode bc640 BC636 BC638
    Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


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    BC636/638/640 BC635/637/639 BC636 BC638 BC640 bc640 Diode bc640 BC636 BC638 PDF

    BC636

    Abstract: BC638 BC640
    Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


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    BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC636 BC638 BC640 PDF

    BC638

    Abstract: bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola
    Text: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80


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    BC636/D BC636 BC638 BC640 BC636/D* BC638 bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola PDF

    bc638 motorola

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80


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    BC636/D BC636 BC638 BC640 BC636/D* bc638 motorola PDF

    c63610

    Abstract: transistor C636 BC635 BC636 BC636-10 BCP51 BCP54 BCX51 BCX54 SC-43A
    Text: BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA


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    BC636; BCP51; BCX51 BC636 SC-43A BC635 BCP51 OT223 SC-73 BCP54 c63610 transistor C636 BC635 BC636-10 BCP51 BCP54 BCX51 BCX54 SC-43A PDF

    c63610

    Abstract: transistor C636 BC635 BC636 BC636-10 BCP51 BCP54 BCX51 BCX54 SC-43A
    Text: BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 07 — 29 June 2007 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA


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    BC636; BCP51; BCX51 BC636 SC-43A BC635 BCP51 OT223 SC-73 BCP54 c63610 transistor C636 BC635 BC636-10 BCP51 BCP54 BCX51 BCX54 SC-43A PDF

    c63610

    Abstract: bc636 BCX51 c636 philips
    Text: BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 06 — 29 March 2006 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1: Product overview Type number [1] Package NPN complement Philips


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    BC636; BCP51; BCX51 BC636 BCP51 SC-43A SC-73 SC-62 O-243 c63610 bc636 BCX51 c636 philips PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 1 EMITTER M AXIMUM RATINGS Rating Symbol BC636 BC638 BC640 Unit Collector-Emitter Voltage VCEO -45 -60 -80 Vdc Collector-Base Voltage VCBO —45 -60 -8 0


    OCR Scan
    BC636 BC638 BC640 b3b72SS PDF

    BC640

    Abstract: BC639-BC640 BC636 C637 BC635 BC638 BC637 BC639 BC635BC636
    Text: COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors T0-92 for AF driver stages and amplifier applications up to 1A. BC6351 BC636 45V iC(max) IBC637 BC638 60V 1A 1.5A


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    BC635 BC640 BC635, BC637, BC639 BC636, BC638, BC640 BC636 BC639-BC640 BC636 C637 BC638 BC637 BC639 BC635BC636 PDF

    bc640

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 1 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol BC636 BC638 BC640 -6 0 -6 0 Vdc -8 0 Vdc VCEO -4 5 C ollector-B ase Voltage VCBO -4 5


    OCR Scan
    BC636 BC638 BC640 BC640 PDF

    Bc636

    Abstract: BC640 639 TRANSISTOR PNP BC638 pnp bc636 transistor
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • C o m p le m e n t to BC635/637/639 ABSOLUTE MAXIMUM RATINGS Ta= 25°C 1 Sym bol Characteristic C o llecto r Emitter Voltage: BC636 a t R BE = 1Kohm : BC638 V cE R : BC640


    OCR Scan
    BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC640 639 TRANSISTOR PNP BC638 pnp bc636 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR "" TECHNICAL DATA BC636 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS * Complement to Bc635 Characteristic Collector-Emitter Voltage atRfiE=lKL! Collector-Emitter Voltage Collector-Emitter Voltage


    OCR Scan
    BC636 Bc635 -10mA -150mA -500mA -500mA -50mA -10mA 50MHz PDF