infineon marking W1s
Abstract: BCR108S BCR35PN
Text: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2=47 kΩ)
|
Original
|
BCR35PN
EHA07176
OT-363
EHA07193
infineon marking W1s
BCR108S
BCR35PN
|
PDF
|
marking code w1s
Abstract: infineon marking W1s
Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)
|
Original
|
BCR10PN
EHA07176
EHA07193
OT-363
OT363
marking code w1s
infineon marking W1s
|
PDF
|
bcr08pn
Abstract: WFs transistor wfs marking
Text: BCR08PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=2.2 kΩ, R2=47 kΩ)
|
Original
|
BCR08PN
EHA07176
OT-363
EHA07193
OT363
bcr08pn
WFs transistor
wfs marking
|
PDF
|
marking WPs
Abstract: No abstract text available
Text: BCR22PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=22 kΩ, R2 =22 kΩ)
|
Original
|
BCR22PN
EHA07176
EHA07193
OT-363
OT363
marking WPs
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BCR22PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=22 kΩ, R2 =22 kΩ)
|
Original
|
BCR22PN
EHA07176
OT-363
EHA07193
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =47 kΩ)
|
Original
|
BCR35PN
EHA07176
OT-363
EHA07193
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BCR08PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=2.2 kΩ, R2=47 kΩ)
|
Original
|
BCR08PN
EHA07176
EHA07193
OT-363
OT363
|
PDF
|
infineon marking W1s
Abstract: marking code w1s marking W1S Marking w1s sot
Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)
|
Original
|
BCR10PN
EHA07176
OT-363
EHA07193
OT363
infineon marking W1s
marking code w1s
marking W1S
Marking w1s sot
|
PDF
|
BCR10PN
Abstract: BCR108S MARKING w1s sot363
Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)
|
Original
|
BCR10PN
EHA07176
OT-363
EHA07193
BCR10PN
BCR108S
MARKING w1s sot363
|
PDF
|
infineon marking W1s
Abstract: marking code w1s marking 215 marking B1 sot363
Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)
|
Original
|
BCR10PN
EHA07176
EHA07193
OT-363
OT363
infineon marking W1s
marking code w1s
marking 215
marking B1 sot363
|
PDF
|
MARKING CODE wus SOT363
Abstract: No abstract text available
Text: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =47 kΩ)
|
Original
|
BCR35PN
EHA07176
EHA07193
OT-363
OT363
MARKING CODE wus SOT363
|
PDF
|
marking WPs
Abstract: No abstract text available
Text: BCR22PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=22 kΩ, R2 =22 kΩ)
|
Original
|
BCR22PN
EHA07176
OT-363
EHA07193
OT363
marking WPs
|
PDF
|
MARKING CODE wus SOT363
Abstract: BCR-35PN MARKING CODE W1s MARKING WUs Infineon BCR35PN
Text: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1 =10 kΩ, R2 =47 kΩ)
|
Original
|
BCR35PN
EHA07176
OT-363
EHA07193
OT363
MARKING CODE wus SOT363
BCR-35PN
MARKING CODE W1s
MARKING WUs
Infineon BCR35PN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)
|
Original
|
BCR10PN
EHA07176
OT-363
EHA07193
|
PDF
|
|
infineon marking W1s
Abstract: BCR108S BCR22PN marking code w1s
Text: BCR22PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=22 kΩ, R2=22 kΩ)
|
Original
|
BCR22PN
EHA07176
OT-363
EHA07193
infineon marking W1s
BCR108S
BCR22PN
marking code w1s
|
PDF
|
infineon marking W1s
Abstract: BCR08PN BCR108S marking code w1s
Text: BCR08PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=2.2 kΩ, R2=47 kΩ)
|
Original
|
BCR08PN
EHA07176
OT-363
EHA07193
infineon marking W1s
BCR08PN
BCR108S
marking code w1s
|
PDF
|
marking 215
Abstract: MARKING CODE wus SOT363 pin configuration of ic IC Marking AC 6 PIN
Text: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =47 kΩ)
|
Original
|
BCR35PN
EHA07176
EHA07193
OT-363
OT363
marking 215
MARKING CODE wus SOT363
pin configuration of ic
IC Marking AC 6 PIN
|
PDF
|
"PNP Transistor array"
Abstract: BA6254FS ic 812 transistor array pnp "PNP Transistors"
Text: Motor driver ICs PNP transistor array BA6254FS The BA6254FS has been developed as a low-saturation output, upper-side transistor array for low-voltage motor drive applications. The three PNP transistors have a common emitter. FApplications Motor drivers FFeatures
|
Original
|
BA6254FS
BA6254FS
"PNP Transistor array"
ic 812
transistor array pnp
"PNP Transistors"
|
PDF
|
transistor marking 6c1
Abstract: No abstract text available
Text: BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP transistor in one package BC846PN BC846UPN
|
Original
|
BC846PN/UPN
BC847PN
BC846PN
BC846UPN
EHA07177
OT363
transistor marking 6c1
|
PDF
|
1ps sot
Abstract: bc 104 npn transistor BC847PN1Ps Q62702-C2374 "two TRANSISTORs" sot-363 pnp npn 4E SOT-363
Text: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation
|
Original
|
847PN
OT-363
Q62702-C2374
May-12-1998
1ps sot
bc 104 npn transistor
BC847PN1Ps
Q62702-C2374
"two TRANSISTORs" sot-363 pnp npn
4E SOT-363
|
PDF
|
bc 104 npn transistor
Abstract: npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c
Text: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation
|
Original
|
847PN
Q62702-C2374
OT-363
Jan-20-1997
bc 104 npn transistor
npntransistor
Q62702-C2374
4E SOT-363
TRANSISTOR BC 90
847PN
1Ps MARKING CODE
TRANSISTOR BC 650 c
|
PDF
|
bc 494 pnp
Abstract: 847PN
Text: BC 847PN SIEMENS NPN/PNP Silicon AF Transistor Array * For A F input stages and driver applivations * High current gain * Low collector-emitter saturation voltage >Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation
|
OCR Scan
|
847PN
847PN
Q62702-C2374
OT-363
bc 494 pnp
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation
|
OCR Scan
|
847PN
Q62702-C2374
OT-363
Mav-12-1998
|
PDF
|
846PN
Abstract: VQE 11E
Text: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation
|
OCR Scan
|
846PN
EHA07193
846PN
Q62702-C2537
OT-363
VQE 11E
|
PDF
|