2SD843
Abstract: 2SB753
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB753 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -4A ·High Collector Power Dissipation ·Complement to Type 2SD843
|
Original
|
2SB753
2SD843
-100V
2SD843
2SB753
|
PDF
|
2SB1289
Abstract: 2SD1580
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1289 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1580
|
Original
|
2SB1289
2SD1580
2SB1289
2SD1580
|
PDF
|
Inverter high voltage power transistor
Abstract: 2SB825 2SD1061
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB825 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1061
|
Original
|
2SB825
2SD1061
Inverter high voltage power transistor
2SB825
2SD1061
|
PDF
|
2SB1018A
Abstract: 2SD1411A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications.
|
Original
|
2SB1018A
2SD1411A
-100V;
2SB1018A
2SD1411A
|
PDF
|
2SB1255
Abstract: 2SD1895
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD1895 APPLICATIONS
|
Original
|
2SD1895
-160V;
-140V;
2SB1255
2SD1895
|
PDF
|
2SB827
Abstract: 2SD1063
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB827 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1063
|
Original
|
2SB827
2SD1063
25itter
2SB827
2SD1063
|
PDF
|
2SB1503
Abstract: 2SD2276 darlington power transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 APPLICATIONS
|
Original
|
2SD2276
-160V;
-140V;
2SB1503
2SD2276
darlington power transistor
|
PDF
|
2SB1560
Abstract: 2SD2390
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2390 APPLICATIONS
|
Original
|
2SD2390
-160V;
2SB1560
2SD2390
|
PDF
|
2sd2439
Abstract: 2SB1588 transistor 2sb1588
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2439 APPLICATIONS
|
Original
|
2SD2439
-160V;
2sd2439
2SB1588
transistor 2sb1588
|
PDF
|
2SB1558
Abstract: 2SD2387
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2387 APPLICATIONS
|
Original
|
2SD2387
-140V;
2SB1558
2SD2387
|
PDF
|
2SB1290
Abstract: 2SD1833 TRANSISTOR 2SD1833
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1290 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1833
|
Original
|
2SB1290
2SD1833
2SB1290
2SD1833
TRANSISTOR 2SD1833
|
PDF
|
2SD844
Abstract: 2SB754 2SB754 equivalent
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB754 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·High Collector Current: IC= -7A ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max) @IC= -4A
|
Original
|
2SB754
2SD844
-50mA;
2SD844
2SB754
2SB754 equivalent
|
PDF
|
2SA1879
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1879 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -80(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -3.5A ·Large Current Capability-IC= -7A
|
Original
|
2SA1879
2SA1879
|
PDF
|
2SA1598
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1598 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -40(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -3.5A ·Large Current Capability-IC= -7A
|
Original
|
2SA1598
2SA1598
|
PDF
|
|
|
2SB925
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB925 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.6V(Max)@IC= -5A ·High Speed Switching APPLICATIONS ·Designed for low voltage switching applications.
|
Original
|
2SB925
-66mA
2SB925
|
PDF
|
KTB1370
Abstract: No abstract text available
Text: SEMICONDUCTOR KTB1370 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. A P S High Collector Current : IC=-7A. B E G Low Collector-Emitter Saturation Voltage. K : VCE sat =-0.5V(Max.) at IC=-4A.
|
Original
|
KTB1370
KTB1370
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTB1370 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. A P S High Collector Current : IC=-7A. B E G Low Collector-Emitter Saturation Voltage. K : VCE sat =-0.5V(Max.) at IC=-4A.
|
Original
|
KTB1370
|
PDF
|
2SD568
Abstract: K 4080 2SB707
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB707 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD568 APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed
|
Original
|
2SB707
2SD568
-10mA
2SD568
K 4080
2SB707
|
PDF
|
2SB1097
Abstract: 2SD1588
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1097 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD1588 APPLICATIONS ·Designed for low-frequency power amplifiers and low speed
|
Original
|
2SB1097
2SD1588
2SB1097
2SD1588
|
PDF
|
2SD569
Abstract: 2SB708
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB708 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD569 APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed
|
Original
|
2SB708
2SD569
-10mA;
2SD569
2SB708
|
PDF
|
2sa112
Abstract: 2SA1129 2SC2654
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1129 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.3(V)(Max)@IC= -3A ·Large Current Capability-IC= -7A ·Complement to Type 2SC2654 APPLICATIONS ·Designed for mid-switching applications, and is ideal for
|
Original
|
2SA1129
2SC2654
2sa112
2SA1129
2SC2654
|
PDF
|
A1640
Abstract: A1640 pnp transistor a1640 BTA1640I3
Text: Spec. No. : C657I3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 1/5 CYStech Electronics Corp. BVCEO IC RCESAT PNP Epitaxial Planar Power Transistor BTA1640I3 -50V -7A 70mΩ Features • Low collector-emitter saturation voltage, VCE sat = -0.4V(max) @ IC = -3A, IB=-0.15A
|
Original
|
C657I3
BTA1640I3
O-251
UL94V-0
A1640
A1640 pnp
transistor a1640
BTA1640I3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTB1370 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES • High Collector Current : Ic=-7A. • Low Collector-Emitter Saturation Voltage. : VCE sat =-0.5V(Max.) at Ic=-4A.
|
OCR Scan
|
KTB1370
|
PDF
|
2sb1018
Abstract: tag c9 240
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1018 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 1Q.3MAX. 03.g±ag FEATURES: . High Collector Current : Ic =-7A . Low Collector Saturation Voltage : vCE sat =-0-5v(Max-) at IC=-4A
|
OCR Scan
|
2SB1018
2SD1411
2sb1018
tag c9 240
|
PDF
|
