BFQ34T
Abstract: BFQ54T philips MATV amplifiers 25c2570 Philips MBB MBB339 638 transistor
Text: Philips Semiconductors bbS3^3]i 0 0 3 1 5 ^ 1 3bT BBAPX Product specification PNP 4 GHz wideband transistor ^ ^ N DESCRIPTION A ME R BFQ54T P H IL IP S /D IS C R E T E b^E ]> PINNING PNP transistor in a plastic SOT37 package. PIN It is primarily intended for use in
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BFQ54T
BFQ34T.
D31SCÃ
BFQ54T
MBB339
BFQ34T
philips MATV amplifiers
25c2570
Philips MBB
MBB339
638 transistor
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Untitled
Abstract: No abstract text available
Text: S A M S UN G SEMICONDUCTOR INC 14E D I 7^4142 0007370 2 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA64 T -2 9 -2 9 DARLINGTON TRANSISTOR • C ollector-Em itter Voltage: Vc*s =30V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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MPSA64
625mW
MPSA62
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639 TRANSISTOR PNP
Abstract: BFQ34T TRANSISTOR P 3 BFQ54T philips MATV amplifiers GHz PNP transistor MEA336
Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFQ54T PHILIPS INTERNATIONAL D E S C R IP T IO N P N P transistor in a plastic S O T 3 7 package. It is primarily intended for use in M A TV and m icrowave amplifiers such a s in aerial amplifiers, radar
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BFQ34T.
BFQ54T
7110fl2ti
cur25
UBB33S
711Dfi2ti
639 TRANSISTOR PNP
BFQ34T
TRANSISTOR P 3
BFQ54T
philips MATV amplifiers
GHz PNP transistor
MEA336
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Untitled
Abstract: No abstract text available
Text: BC639/640 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.
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BC639/640
StyleTO-92
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LT 5251
Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
Text: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >
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02SD4711
cycleS50%
LT 5251
2s87
a1t transistor
TRANSISTOR A1t
Y500200
t430 transistor
transistor bc 541
5251 F ic
T440
2SB564
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614L
Abstract: step down Voltage Regulator 230 volt to 150 volt
Text: 5V, 300mA Linear Regulator with RESET and ENABLE D escription The CS-8120 is a 5V, 300mA precision linear regulator with two microproces sor compatible control functions and protection circuitry included on chip. The composite NPN-PNP output pass transistor assures a lower dropout volt
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300mA
CS-8120
150mA)
CS-8120T5
CS-8120TV5
CS-8120TH5
CS-8120N8
CS-8120D14
614L
step down Voltage Regulator 230 volt to 150 volt
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Untitled
Abstract: No abstract text available
Text: 3EE D Bi A23b3S0 DGl?GbS 1 H S I P PNP Silicon RF Transistor BFT 92 SIEMENS/ SPCLi SEMICONDS _ • For broadband amplifiers up to 2 G Hz at collector currents up to 20 mA. • Complementary type: BFR 92P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions!
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A23b3S0
OT-23
aS3b32Q
Q0170bÃ
BFT92
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2S8624
Abstract: BV4 transistor
Text: 2 S B 6 2 4 .2 S B 6 2 4 R Audio Frequency Power Amplifier PNP Silicon Epitaxial Transistor • C o m p lim e n ta ry to 2 S D 5 9 6 , 2 S D 5 9 6 R P A C K A G E D IM E N S IO N S • High D C C u rre n t G ain: h FE = 2 0 0 T Y P . V CE = - 1 .0 V , lc !
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2SB624,
2SB624R
-100m
2SB624
2S8624
BV4 transistor
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BC635 ECB
Abstract: BC638
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC635 ECB
BC638
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Untitled
Abstract: No abstract text available
Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T a = 25 1C Sym bol C h aracte ristic Collector Emitter Voltage at R b e = 1 Kohm Collector Emitter Voltage Collector Emitter Voltage
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC 635/637/639 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter Voltage atR eE=1Kohm C ollecto r E m itter Voltage C ollecto r E m itter Voltage
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BC636/638/640
BC636
BC638
BC640
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Bc636
Abstract: BC640 639 TRANSISTOR PNP BC635 BC638
Text: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC 635/637/639 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter Voltage at R b e = 1 Kohm C ollecto r E m itter Voltage
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC640
639 TRANSISTOR PNP
BC635
BC638
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ca3096
Abstract: CA3096AE
Text: HARRIS SEIUCOND SECTOR b lE D • 43G 2271 TTT ■ IHAS CA3096 HARRIS S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Description Applications • D 047D 13 The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of
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CA3096
CA3096C,
CA3096,
CA3096A
CA3096A,
CA3096C
CA3096.
ca3096
CA3096AE
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Bc636
Abstract: BC640 639 TRANSISTOR PNP BC638 pnp bc636 transistor
Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • C o m p le m e n t to BC635/637/639 ABSOLUTE MAXIMUM RATINGS Ta= 25°C 1 Sym bol Characteristic C o llecto r Emitter Voltage: BC636 a t R BE = 1Kohm : BC638 V cE R : BC640
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC640
639 TRANSISTOR PNP
BC638
pnp bc636 transistor
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ca3096
Abstract: CA3096AE 639 TRANSISTOR PNP CA3096E
Text: ui H A R R CA3096 I S S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • F ive-Independent Transistors The CA3096C, CA3Û96, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of
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CA3096
CA3096C,
CA3096A
CA3096A,
CA3096,
CA3096C
CA3096.
ca3096
CA3096AE
639 TRANSISTOR PNP
CA3096E
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triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD
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1S2835
1S2836
1S2837
1S2838
1SS123
1SS220
1SS221
1SS222
1SS223
2SA811A
triac tic 236
SCR U 537
MP25 transistor
transistor su 312
GA1L32
3 pin mini mold transistor
2SJ19
FA114M
2SA1611
Z 103 TRIAC
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639 TRANSISTOR PNP
Abstract: 638 transistor bc636 npn transistor bc640 transistor bC640 OF CDIL transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 ts 4141 TRANSISTOR BC635
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
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BC635,
BC636,
C-120
BC640Rev
030106E
639 TRANSISTOR PNP
638 transistor
bc636 npn transistor
bc640
transistor bC640 OF CDIL
transistor C 639 W
BC639-BC640
NPN transistor 500ma TO-92
ts 4141 TRANSISTOR
BC635
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sc74750
Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
Text: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes
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OT346
SC-59)
sc74750
MSE-200
PESD5VOL4UW
KMZ52
kmz51
smd transistor BC557
PBLS1504V
2n5551 smd
PMBS3904, PMSS3904
sc7921
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
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Original
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BC635,
BC636,
640Rev
030106E
C-120
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
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BC635,
BC636,
640Rev
180712E
C-120
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NPN Silicon Epitaxial Planar Transistor to92
Abstract: BC639-BC640 Transistor BC637 or BC639 BC635 BC636 BC637 BC638 BC639 BC640 transistor C 639 W
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
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BC635,
BC636,
640Rev
030106E
C-120
NPN Silicon Epitaxial Planar Transistor to92
BC639-BC640
Transistor BC637 or BC639
BC635
BC636
BC637
BC638
BC639
BC640
transistor C 639 W
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC635/637/639 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector Em itter Voltage at R be =1 Kohm C ollector Em itter Voltage C ollector Em itter Voltage
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
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PDF
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MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: transistor smd yw PMEM4020AND PMEM4020APD MARKING CODE SMD IC marking code D3 SOT457 13707 PNP TRANSISTOR marking pr smd transistor marking D3
Text: PMEM4020APD PNP transistor/Schottky rectifier module Rev. 01 — 4 October 2004 Product data sheet 1. Product profile 1.1 General description Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457
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PMEM4020APD
OT457
SC-74)
PMEM4020AND.
MOSFET TRANSISTOR SMD MARKING CODE A1
transistor smd yw
PMEM4020AND
PMEM4020APD
MARKING CODE SMD IC
marking code D3 SOT457
13707
PNP TRANSISTOR marking pr
smd transistor marking D3
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PCF7952
Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.
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VP22480-3
VP22480-5
VP22530-2
PCF7952
pcf7944
BGY270
PCF7944AT
ON769
ON961
TDA10086HT
pch7970
PCF7341
OH191
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